MMBT2907A CODE MARKING 2F Search Results

marking code nt amplifier

Abstract: MARKING 2907A 2907A BF
Contextual Info: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

K2F TRANSISTOR

Abstract: MMBT2907A-13 C2F marking SOT23
Contextual Info: MMBT2907A 60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Low Power Amplification and Switching

MMBT2907A

Contextual Info: MMBT2907A Taiwan Semiconductor Small Signal Product 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant

S2F MARKING SOT23

Abstract: TRANSISTOR S2F s2F SOT23 BCW66 MMBT2222A SMBT2222A MARKING CODE 24 TRANSISTOR smbt2222a sot23 marking code YM MARKING CODE SOT23-3
Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F

ksd transistor

Abstract: MMBT2907A code marking 2F MMBT2222A MMBT2907A
Contextual Info: MMBT2907A PNP Silicon Transistor Descriptions PIN Connection • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with MMBT2222A

MMBT2907A MMBT2907

Contextual Info: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2012-01-11 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

MMBT2907A-2F

Abstract: transistor 2F to-236 Application of MMBT2907A MMBT2907 ON MMBT2907 MMBT2222 MMBT2222A MMBT2907A mmbt2907 2f MMBT2907 die
Contextual Info: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

2907 TRANSISTOR PNP

Abstract: 2907 MMBT2222A SMBT2222A
Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F

Contextual Info: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-15 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

a10 transistor

Abstract: marking code 2f MMBT2907A sot 23 marking code NT MARKING NT SOT23
Contextual Info: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

2F PNP SOT23

Abstract: PNP SOT-23 2F MMBT2907A MMBT2222A switch NPN SOT-23 2f sot-23
Contextual Info: BL Galaxy Electrical Production specification PNP General Purpose Amplifier FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT2907A Pb Lead-free MMBT2222A. z Ideal for medium power amplification and switching. APPLICATIONS

Contextual Info: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: WILLAS FM120-M+ MMBT2907ADW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNT Purpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

2907 pnp transistor

Contextual Info: WILLAS FM120-M+ THRU MMBT2907 A LT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistor BARRIER RECTIFIERS -20V- 200V General Purpose Pb Free Product SOD-123+ PACKAGE Package outline Features PNP Silicon process design, excellent power dissipation offers • Batch

smd transistor 2f

Abstract: smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE 26 smd transistor marking 26 SMD CODE TRANSISTOR JA MARKING SMD PNP TRANSISTOR R TRANSISTOR SMD MARKING CODE 2F 2f smd transistor transistor SMD 2f 2f pnp smd transistor
Contextual Info: SMD General Purpose Transistor PNP MMBT2907A SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:

smd TRANSISTOR code marking 2F

Abstract: transistor pnp 20v, 2.5a smd
Contextual Info: SMD GENERAL PURPOSE TRANSISTOR PNP MMBT2907A SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208

Contextual Info: MMBT2907A PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2222A MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)

MMBT2222A

Abstract: MMBT2907A
Contextual Info: MMBT2907A PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2222A MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)

mmbt2709

Abstract: MMBT2709A MMBT27 MMBT2907A-2F MMBT2222 MMBT2222A MMBT2907 MMBT2907A MMBT2907 2F
Contextual Info: MMBT2907, MMBT2907A PNP Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-05-04 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1

sot-23 Marking 2F

Contextual Info: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Product Features SOT-23 ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant

Contextual Info: MMBT2907A Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. C 3 2 1 1 Mechanical Data B Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options:

*2F MARKING

Contextual Info: MMBT2907A VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2907A.

Marking Code 2F

Abstract: code 2F
Contextual Info: MMBT2907A PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2222A MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃

d 417 transistor

Abstract: Marking Code 2F MMBT2907A MPS2907A transistor marking code SOT-23 2F DIB 01
Contextual Info: PRELIMINARY PRELIMINARY PRELIMINARY MMBT2907A SMALL SIGNAL TRANSISTORS PNP SOT-23 FEATURES ¨ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) Top View ¨ This transistor is also available in the