MMBFJ177 Search Results

MMBFJ177LT1

Abstract: sot-23 JFET
Contextual Info: ON Semiconductort JFET Chopper MMBFJ177LT1 P–Channel – Depletion 3 1 2 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r –25 Vdc CASE 318–08, STYLE 10 SOT–23 (TO–236AB) 2 SOURCE THERMAL CHARACTERISTICS

Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

Contextual Info: MMBFJ177LT1G JFET Chopper P−Channel − Depletion Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value

J174

Abstract: j177 J176 j175 mark 6y semiconductor j175 J177 J176 J175
Contextual Info: ÏV1:0 C^N >3ä.:>rr. T O R J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 Mark: 6W / 6X / 6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings"

MMBFJ176 on semiconductor

Abstract: J175 MMBFJ176 6x marking sot-23 p-channel
Contextual Info: J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G S SOT-23 D Mark: 6W / 6X / 6Y TO-92 DG S

MMBFJ177LT1G

Abstract: 6Y MARKING SOT23
Contextual Info: MMBFJ177LT1G JFET Chopper P−Channel − Depletion Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value

MMBFJ177LT1

Abstract: MMBFJ177LT1G
Contextual Info: MMBFJ177LT1 JFET Chopper P−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit VDG 25 Vdc VGS r −25 Vdc 3 GATE 1 DRAIN

j175

Abstract: J176 J174 J177 j174-j177 MMBFJ177
Contextual Info: F A iW D iscrete PO W ER & S ig n a l Technologies P N IU S E M C D N O U C 3 T Q H •; J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 P-Channel Switch This device is designed for low level analog switching sam ple and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.

MMBFJ177

Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 Discrete POWER & Signal Technologies National S e m i c o n d u c to r " MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 # SOT-23 M a rk : v S 6W / 6 X / 6 Y P-Channel Switch This device is designed for low level analog switching sam ple and hold

EQUIVALENT FOR J175

Abstract: EQUIVALENT FOR J174 j174 EQUIVALENT J174 J177 equivalent J175 EQUIVALENT FOR J176 J176 J177 MMBFJ177
Contextual Info: MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G D G S TO-92 SOT-23 D S Mark: 6W / 6X / 6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 88. Absolute Maximum Ratings*

Contextual Info: MMBFJ177LT1G, MMBFJ177LT1G JFET Chopper P−Channel − Depletion http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • 2 SOURCE Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MMBFJ177LT1

Contextual Info: MOTOROLA Order this document by MMBFJ177LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc

mmbfj177lt1g

Contextual Info: MMBFJ177LT1G JFET Chopper P−Channel − Depletion Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value

Contextual Info: ON Semiconductort JFET Chopper MMBFJ177LT1 P−Channel − Depletion 3 1 2 MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit VDG 25 Vdc VGS r −25 Vdc CASE 318 −08, STYLE 10 SOT−23 (TO −236AB) 2 SOURCE THERMAL CHARACTERISTICS

MMBFJ177LT1

Contextual Info: ON Semiconductort JFET Chopper MMBFJ177LT1 P–Channel — Depletion MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r –25 Vdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg –55 to +150

JSs sot23

Abstract: BFJ17
Contextual Info: MMBFJ177LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating D rain-G ate V oltag e Reverse Gate-Source V oltage Symbol Value vdg 25 V VGS(r) -2 5 V Symbol M ax Unit Pd 225 mW 1.8 m W rz fy JA 556 °c/w T j' Tstg - 55 to + 150 °c ,-Æ)

Contextual Info: MMBFJ177LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value VDG 25 Unit V v GS(rl - 25 V Symbol Max Unit PD 225 mW 1.8 m W /T Röja 556 °C/W TJ« Tstfl - 55 to +150 X G aie V THERMAL CHARACTERISTICS

J175

Abstract: MMBFJ177 MMBFJ176 J177 TO-92 J176 J174 J177 MMBFJ175 process 88 J177. P-CHANNEL. TO-92
Contextual Info: J174 1J175 / J176 1J177 1 MMBFJ177 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r " MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 SOT-23 M a rk : 6 W / 6 X / 6 Y P-Channel Switch This device is designed for low level analog switching sample and hold

na174

Abstract: MMBFJ177
Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

Contextual Info: J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. J174 / 175 / 176 / 177 1 MMBFJ175 / 176 / 177

j174 transistor

Abstract: J175 J174 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 J175 transistor transistor j175
Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

J177

Abstract: J175 mmbfj176 MMBFJ176 on semiconductor MMBFJ177
Contextual Info: s e M I O O N C U C T Q R «* J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 G1 Mark: 6W /6X/6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum RatinQS

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

j177 TRANSISTOR

Abstract: J176 J176. P-CHANNEL. TO-92 J174 J175 J177 MMBFJ175 MMBFJ176 MMBFJ177 J177 TO-92
Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold