ML101 Search Results

laser diode DVD 300mw

Abstract: ML1XX26 ML101J26 Mitsubishi ML101J26
Contextual Info: MITSUBISHI LASER DIODES ML1XX26 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J26 DESCRIPTION ML1XX26 is FEATURES a high-power, high-efficient •High Output Power: 300mW Pulse AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of

mitsubishi diode catalog

Abstract: ML1016R optima
Contextual Info: Mitsubishi ML1016R Laser Diode Specifications The Mitsubishi ML1016R is a high power AlGaInP laser diode which provides a stable, single transverse mode oscillation with a typical emission wavelength of 658nm and the continuous light output of 30mW. The diode is suitable for large

700NM

Abstract: ML1012R mitsubishi diode catalog 670NM 30MW Laser-Diode optima
Contextual Info: Mitsubishi ML1012R Laser Diode Specifications The Mitsubishi ML1012R is a high power AlGaInP laser diode which provides a stable, single transverse mode oscillation with a typical emission wavelength of 685nm and the continuous light output of 30mW. The diode is suitable for large

ML101J19

Abstract: ML120G19 optical CW LASER
Contextual Info: MITSUBISHI LASER DIODES ML1XX19 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J19, ML120G19 DESCRIPTION ML1XX19 semiconductor is FEATURES a high-power, laser which high-efficient provides a •High Output Power: 120mW Pulse AlGaInP stable, single

mitsubishi 660nm 350mw

Abstract: Laser Diode for dvd 350mW ML1XX27 ML101J27 Mitsubishi Electric Semiconductor ML101J27
Contextual Info: MITSUBISHI LASER DIODES ML1XX27 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J27 This type is under development. Therefore, please note that this data sheet may be changed without any notice. DESCRIPTION ML1XX27 is FEATURES a high-power, high-efficient

ML101J17

Abstract: ML120G17 ML1XX17
Contextual Info: MITSUBISHI LASER DIODES t n e m p evelo ML1XX17 SERIES D r e d n U TYPE NAME y r a n i Prelim FOR OPTICAL INFORMATION SYSTEMS ML101J17, ML120G17 This type is under development. Therefore, please note that this data sheet may be changed without any notice.

ML1413R

Abstract: ML1013R ML120G3 laser diode 670
Contextual Info: ML1XX3 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML1013R, ML1413R, ML120G3 FEATURES DESCRIPTION • High ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and

Laser Diode for dvd 400 mW

Abstract: ML1016R ML120G6
Contextual Info: MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML1016R, ML120G6 DESCRIPTION FEATURES • High Power: 30mW CW , 50mW (pulse) ML1XX6 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode

Contextual Info: MITSUBISHI LASER DIODES ML1XX10 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J10, ML120G10 DESCRIPTION FEATURES ML1XX10 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685 nm and standard CW light output of

ML1XX25

Abstract: ML101J25
Contextual Info: MITSUBISHI LASER DIODES ML1XX25 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J25 DESCRIPTION ML1XX25 is FEATURES a high-power, high-efficient •High Output Power: 250mW Pulse AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of

laser diode DVD 100mw

Abstract: ML101J18 ML1XX18 ML120G18
Contextual Info: MITSUBISHI LASER DIODES ML1XX18 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J18, ML120G18 DESCRIPTION ML1XX18 semiconductor is FEATURES a high-power, laser which high-efficient provides a •High Output Power: 100mW Pulse AlGaInP stable, single

mitsubishi photodiode

Abstract: mitsubishi laser diode ML1012R 685nm laser diode 30mw 685nm
Contextual Info: MITSUBISHI LASER DIODES ML1XX2 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML1012R FEATURES DESCRIPTION • High Power: 30mW CW , 50mW (pulse) ML1XX2 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and

laser diode DVD 200mw

Abstract: 658nm 200mW 658nm 200mW AlGaInP ML1XX23 658nm ML101J23 ml101
Contextual Info: MITSUBISHI LASER DIODES ML1XX23 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J23 DESCRIPTION ML1XX23 is FEATURES a high-power, high-efficient •High Output Power: 200mW Pulse AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of

ML120G2

Contextual Info: MITSUBISHI LASER DIODES ML1XX22 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J22, ML120G22 DESCRIPTION ML1XX22 is FEATURES a high-power, high-efficient •High Output Power: 180mW Pulse AlGaInP semiconductor laser which provides a stable, single

mitsubishi diode catalog

Abstract: 685nm 50mw 670NM 700NM ML1013R optima Wavelength Wavelength 685NM
Contextual Info: Mitsubishi ML1013R Laser Diode Specifications The Mitsubishi ML1013R is a high power AlGaInP laser diode which provides a stable, single transverse mode oscillation with a typical emission wavelength of 685nm and the continuous light output of 50mW. The diode is suitable for large

ML101J14

Abstract: ML120G14 ML1XX14 dvd pulse laser diode
Contextual Info: MITSUBISHI LASER DIODES ML1XX14 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J14, ML120G14 DESCRIPTION FEATURES ML1XX14 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 660nm and standard PULSE

dvd pulse laser diode

Abstract: ML101J22 ML120G22 ML1XX22 ML120G2
Contextual Info: MITSUBISHI LASER DIODES ML1XX22 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J22, ML120G22 DESCRIPTION ML1XX22 is FEATURES a high-power, high-efficient •High Output Power: 180mW Pulse AlGaInP semiconductor laser which provides a stable, single

Contextual Info: t n e m p elo v e D r Unde inary MITSUBISHI LASER DIODES ML1XX27 SERIES Prelim TYPE NAME FOR OPTICAL INFORMATION SYSTEMS ML101J27 This type is under development. Therefore, please note that this data sheet may be changed without any notice. DESCRIPTION ML1XX27

ML101J8

Abstract: ML120G8
Contextual Info: MITSUBISHI LASER DIODES PRELIMINARY ML1XX8 SERIES Notice : This is not a final specification Some parametric limits are subject to change. FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J8, ML120G8 This type is under development. Therefore, please note that this data sheet may be changed

Laser Diode for dvd 400 mW

Abstract: ML1019R ML120G9 mitsubishi photodiode
Contextual Info: MITSUBISHI LASER DIODES PRELIMINARY ML1XX9 SERIES Notice : This is not a final specification Some parametric limits are subject to change. FOR OPTICAL INFORMATION SYSTEMS ML1019R, ML120G9 TYPE NAME DESCRIPTION FEATURES O High Power: 30mW CW , 50mW (pulse)

ml101

Contextual Info: Document ML101-1 SE FOR A E L E R LIMITEDELL COLLINS ROCKW Chip Inductors–ML413RAA 1008 Current Derating • High SRF and excellent Q values • Tight tolerances, many values at 1% • 39 inductance values from 10 nH to 802 µH 120 110 120 100 100 47 nH

ML1412R

Abstract: 685-nm ML1012R ML120G2
Contextual Info: ML1XX2 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML1012R, ML1412R, ML120G2 FEATURES DESCRIPTION • High Power: 30mW CW , 50mW (pulse) ML1XX2 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and

ML1XX20

Abstract: ML120G2 ML101J20 ML120G20
Contextual Info: MITSUBISHI LASER DIODES ML1XX20 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J20, ML120G20 This type is under development. Therefore, please note that this data sheet may be changed without any notice. DESCRIPTION ML1XX20 is FEATURES a high-power,

ML101J16

Abstract: ML120G16 ML1XX16
Contextual Info: MITSUBISHI LASER DIODES t n e m p evelo ML1XX16 SERIES D r e d n U TYPE NAME y r a n i Prelim FOR OPTICAL INFORMATION SYSTEMS ML101J16, ML120G16 This type is under development. Therefore, please note that this data sheet may be changed without any notice.