MJE1800 Search Results

MJE18006

Abstract: IC13A
Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed ・Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS

EQUIVALENT FOR mjf18004

Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

221D

Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Contextual Info: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art

221D

Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES

Contextual Info: MOTOROLA Order this document by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient

221D

Abstract: MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light

221D

Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES

mjf18004

Contextual Info: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state−of−the−art

MJE18002G

Abstract: MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.

Contextual Info: ^zml-tonauctoi U^i , Lfnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor MJE18006 DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=1000V(Min) • High Switching Speed

MJE18004D2

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 2A200
Contextual Info: ON Semiconductor MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar

2sc1826 transistor

Abstract: MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art die designed

MJE105

Abstract: 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS The MJE/MJF18002 have an applications specific state–of–the–art die designed

vce 1200 and 5 amps npn transistor to 220 pack

Abstract: MJF18002 221D MJE18002 MJE210 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The MJE/MJF18002 have an applications specific state–of–the–art die designed

Contextual Info: MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.

MJE18002

Contextual Info: Inchange Semiconductor Product Specification MJE18002 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballast

Contextual Info: ON Semiconductor MJE18006 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS The MJE18006 has an applications specific state−of−the−art die

npn transistor 400 volts.10 amperes

Contextual Info: ON Semiconductor MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar

mje18008

Abstract: MJE/MJF18008
Contextual Info: ON Semiconductor MJE18008 * MJF18008 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state−of−the−art

MJE18002

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die

221D

Abstract: MJE18009 MJF18009 MPF930 MTP8P10 MUR105
Contextual Info: ON Semiconductort MJE18009 MJF18009 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated SWITCHMODE Power

MJE18002

Contextual Info: SavantIC Semiconductor Product Specification MJE18002 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast PINNING

MJE18006

Contextual Info: SavantIC Semiconductor Product Specification MJE18006 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts.

MJE18004

Contextual Info: SavantIC Semiconductor Product Specification MJE18004 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING