MJE13009 CIRCUIT Search Results

mje13009-2

Abstract: Bipolar Junction NPN Transistor 2N2222 Inverter AN-767 MJE13009-D 2N2222 transistor SOA 2N2905 MOTOROLA mje13009 equivalent 2N2222 NPN Transistor features motorola AN719 2N2222 transistor to drive a relay
Contextual Info: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* Designer's  Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive

mje13009-2

Abstract: mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826
Contextual Info: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive

1N4933

Abstract: 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826 2N2905 MOTOROLA mje13009-2
Contextual Info: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive

mje13009l

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

mje13009 equivalent

Abstract: MJE13009g 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 AN719
Contextual Info: MJE13009 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

mje13009 equivalent

Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

mje13009 equivalent

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

mje13009 equivalent

Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are

MJE13009L

Abstract: mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are

MJE13009

Abstract: MJE-13009
Contextual Info: MJE13009 SILICON NPN SWITCHING TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc.

mje13009 equivalent

Abstract: MJE13009 MJE13
Contextual Info: MJE13009  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW BASE-DRIVE REQUIREMENTS DESCRIPTION The MJE13009 is a Multiepitaxial Mesa NPN transistor mounted in Jedec TO-220 plastic

bd139 3v

Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V

MJE13009

Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications

mje13008

Abstract: MJE-13008 MJE13009 SGS-Thomson
Contextual Info: MJE13008 MJE13009 SILICON NPN SWITCHING TRANSISTORS n MJE13008 IS SGS-THOMSON PREFERRED SALESTYPE. DESCRIPTION The MJE13008 and MJE13009 are multiepitaxial mesa NPN transistor. They are mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators deflection

JE13009

Contextual Info: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA M JE13009* D esigner’s Data Sheet ‘ Motorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs The MJE13009 is designed for high-voltage, high-speed power switching inductive

mje13009 equivalent

Abstract: 2N2222 transistor output curve 2N2222 transistor to drive a relay on semiconductor AN719
Contextual Info: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

C2026

Abstract: transistor 400V 8A transistor 400v 8a to220
Contextual Info: UTC MJE13009 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFICATION APPLICAION * Silicon NPN triple diffused MESA type electronic transformers power switching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Tc=25°C, unless otherwise noted

Contextual Info: UTC MJE13009 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFICATION APPLICAION * Silicon NPN triple diffused MESA type electronic transformers power switching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Tc=25°C, unless otherwise noted

Contextual Info: UTC MJE13009 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFICATION APPLICAION * Silicon NPN triple diffused MESA type electronic transformers power switching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Tc=25°C, unless otherwise noted

mje13009 equivalent

Abstract: MJE13009 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826
Contextual Info: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

AN-719

Abstract: mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826
Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

MJE13009

Abstract: MJE-13009 mje13009 equivalent
Contextual Info: SavantIC Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/

mje13009

Abstract: MJE-13009 mje13009 equivalent
Contextual Info: SavantIC Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/