MJE13005 TRANSISTOR Search Results

MJE130

Abstract: 1N4933 1N5820 2N2222 2N2905 MJE13005 MJE200 MJE210 MR826 core ferroxcube
Contextual Info: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching

MJE13005

Abstract: MJE13005 TRANSISTOR MJE13005 2 MJE-13005 equivalent mje13005 MJE13004 MJE13005-1 transistor mje13005 circuit based on MJE13005 NPN Transistor 600V
Contextual Info: DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS TC=25°C unless otherwise noted

PT 10000

Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

equivalent mje13005

Abstract: MJE13005 ib11
Contextual Info: MJE13005 NPN SILICON TRANSISTOR ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT o ABSOLUTE MAXIMUM RATINGS TA=25 C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 4 75 Emitter-Base Voltage

transistor 13005

Abstract: 13005 TRANSISTOR 13005 2 transistor 13005 13005 2 13004 TRANSISTOR 13005 A 13005 equivalent PC 13005 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: MJE13004 NPN MJE13005 (NPN) SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating 13004 Collector-base voltage Vcb 600 Collector-emitter voltage Vceo 300 Emitter-base voltage Veb 9 Collector current (DC) Ic 4.0 Collector current (Pulse)

MJE13005

Abstract: MJE13005 2 equivalent mje13005 transistors mje13005 npn transistors 700V 1A
Contextual Info: SavantIC Semiconductor Product Specification MJE13005 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/

equivalent mje13005

Abstract: soa 01 MJE13005 transistor mje13005
Contextual Info: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ● FEATURES: MJE13005 •HIGH VOLTAGE CAPABILITY ■HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■COMPACT FLUORESCENT LAMP ■SWITCH MODE POWER SUPPLIES

2n2222 h parameter values

Abstract: equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Sustaining Voltage

E13005-225

Abstract: e13005 2 e13005 e13005- 2
Contextual Info: E13005-225 Pb Free Plating Product Pb E13005-225 MJE Power Transistor Product specification Silicon NPN Power Transistor MJE13005 series DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits.

E13005-250

Abstract: e13005 2 E13005 transistor E13005 e13005- 2 .E13005 TRANSISTOR npn E13005 TRANSISTOR npn e13005-2 E13005 -2
Contextual Info: E13005-250 Pb Free Plating Product Pb E13005-250 MJE Power Transistor Product specification Silicon NPN Power Transistor MJE13005 series DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits.

equivalent mje13005

Abstract: mje13005 MJE13005L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 „ These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 1 TO-220 TO-262  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

e13005 2

Abstract: E13005 MJE1300 E13005 -2 transistor E13005 E13005 D e13005- 2 transistors mje13005 npn transistors 700V 1A UJ05
Contextual Info: MJE13005 NPN POWER TRANSISTORS 400 VOLTS 4 AMP, 75 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • V C E O su s = 400V (Min). • VcEV = 700V blocking capability CASE STYLE T0-220AB

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJE13005 Features • NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJE13005 Features • Mounting Torgue: 5 in-lbs Maximum Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

E13005

Abstract: e13005 2 E13005 -2 E13005 D E13004 transistor E13005 MJE13004 E1300 MJE13005 e13005- 2
Contextual Info: ÆàMOSPEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching regulator's,inverters,DC -DC conveter, Motor controls, Solenoiid / Relay drivers and Deflection

circuit based on MJE13005

Abstract: transistor transistor mje13005 equivalent mje13005 MJE13005 MJE13005 TRANSISTOR chip die npn transistor mje13005 equivalent transistor power CP285
Contextual Info: PROCESS CP285 Central Power Transistor TM Semiconductor Corp. NPN - Silicon Power Transistor Chip PROCESS DETAILS Die Size 105 x 105 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 32 x 22 MILS Emitter Bonding Pad Area 33 x 24 MILS Top Side Metalization

circuit based on MJE13005

Abstract: mje13005 ti 631 transistor MJE13005 CP275 equivalent mje13005 SILICON TRANSISTOR CORP MJE-13005
Contextual Info: PROCESS CP275 Central Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip TM Semiconductor Corp. PROCESS DETAILS Die Size 105 x 105 MILS Die Thickness 8.5 MILS Base Bonding Pad Area 32 x 19 MILS Emitter Bonding Pad Area 28 x 22 MILS Top Side Metalization

tip420

Abstract: BU522B tip420 transistor BD243 TIP41/TIP42 BD535 transistors d44c8 D44C6 B0243C BD53
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package (continued) R esistive Switching lcCont V c E O (sus) Amps Max Volts Min 4 45 Device Type NPN D44C6 D45C6 2N6124 BD534 2N6121 BD533 60 PNP BD535 2N6122 D44C7 BD536 2N6125 D45C7 D44C8 D45C8

MJE13005F

Abstract: MJE13005 MJE13004
Contextual Info: MJE13005F MJE13005F High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

mje13005F FIRST SILICON

Abstract: MJE13005F
Contextual Info: MJE13005F MJE13005F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 4.0A Collector-base Voltage 700V Operating and storage junction temperature range: -55OC to +150 OC

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 4.0A Collector-base Voltage 700V