MJE13005 DR Search Results

MJE130

Abstract: 2N2222 NPN Transistor features 2N2905 equivalent 2N2905 MOTOROLA MJE13005-D 1N4933 1N5820 2N2222 2N2905 MJE13005
Contextual Info: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA MJE13005* Designer's  Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching

transistor mje13005

Abstract: equivalent mje13005 MJE13005-D 1N4933 1N5820 2N2222 2N2905 MJE13005 MJE200 MJE210
Contextual Info: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching

MJE130

Abstract: 1N4933 1N5820 2N2222 2N2905 MJE13005 MJE200 MJE210 MR826 core ferroxcube
Contextual Info: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  1 FEATURES TO-220F TO-251 1 1 TO-263 TO-252 APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits 

MJE13005

Abstract: mje130 npn transistors 700V 1A MJE-13005 equivalent mje13005 MJE13005 2
Contextual Info: Inchange Semiconductor Product Specification MJE13005 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed APPLICATIONS ・Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/

MJE13005

Abstract: MJE13005 2 equivalent mje13005 transistors mje13005 npn transistors 700V 1A
Contextual Info: SavantIC Semiconductor Product Specification MJE13005 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/

2n2222 h parameter values

Abstract: equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

equivalent mje13005

Abstract: 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

transistor mje13005 TO-126

Abstract: to-126 transistor case
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

circuit based on MJE13005

Abstract: Ferroxcube core 2n2222 transistor pin b c e MJE13005G transistor mje13005 TO-126 mje13005
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

equivalent mje13005

Abstract: transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G
Contextual Info: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

equivalent mje13005

Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

equivalent mje13005

Abstract: 1N4933 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

equivalent mje13005

Abstract: mje13005 MJE13005L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 „ These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

equivalent mje13005

Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

E13005

Abstract: e13005 2 E13005 -2 E13005 D E13004 transistor E13005 MJE13004 E1300 MJE13005 e13005- 2
Contextual Info: ÆàMOSPEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching regulator's,inverters,DC -DC conveter, Motor controls, Solenoiid / Relay drivers and Deflection

equivalent mje13005

Abstract: transistor 2n222 1N493 1N4933 1N5820 2N222 2N2905 MJE13005 MJE200 MJE210
Contextual Info: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

equivalent mje13005

Contextual Info: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

transistor 2N222

Abstract: MJE13005G 1N493 1N4933 1N5820 2N222 2N2905 MJE200 MJE210
Contextual Info: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,

2n222 TRANSISTOR

Abstract: MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222
Contextual Info: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,

2sb834 mx

Abstract: mx 2sb834 IC LM317 CIRCUITS 2sd880 equivalent npn 400 v 1.5 a BUT11 2SA940 BD941 igo tv data sheet tip41 file type
Contextual Info: MX-MICROELECTRONICS TO-220 PACKAGE Applied widely for: • • • • TV,Av,power amplifiers power drive e.c.t. ac energy saving lights power amplifiers power switch and speedy circuits DC regulators of electronical devices and calcukators • Applied widely for TV,Av,power amplifiers power drive e.c.t. ac

mx 2sb834

Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Contextual Info: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO

power transistors cross reference

Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products