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    MJE13005 Search Results

    MJE13005 Datasheets (71)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MJE13005
    Central Semiconductor TRANS GP BJT NPN 400V 4A 3TO-220 Original PDF 72.92KB 2
    MJE13005
    Fairchild Semiconductor High Voltage Switch Mode Application Original PDF 48.33KB 5
    MJE13005
    Korea Electronics Switching Transistor Original PDF 83.56KB 3
    MJE13005
    Motorola Silicon NPN Transistor Original PDF 367.46KB 11
    MJE13005
    Motorola 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS Original PDF 316.95KB 8
    MJE13005
    On Semiconductor SWITCHMODE Series NPN Silicon Power Transistors Original PDF 140.28KB 8
    MJE13005
    On Semiconductor 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS - 75 WATTS Original PDF 103.94KB 7
    MJE13005
    Philips Semiconductors Silicon Diffused Power Transistors Original PDF 86.86KB 4
    MJE13005
    Sinyork Mini size of Discrete semiconductor elements Original PDF 506.13KB 15
    MJE13005
    STMicroelectronics SILICON NPN SWITCHING TRANSISTOR Original PDF 60.2KB 4
    MJE13005
    USHA Switchmode power transistor. High voltage, high speed power switching inductive circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Vebo = 9Vdc. Original PDF 51.35KB 3
    MJE13005
    USHA NPN, silicon plastic power transistor. For 115 and 220V switch-mode applications such as switching regulators, inverters motor controls, solenoid/relay drivers and deflection circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Veb = 9Vdc, Ic = 4Adc, Pd = 75W. Original PDF 46.69KB 2
    MJE13005
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    MJE13005
    Wing Shing Computer Components NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) Original PDF 34.71KB 1
    MJE13005
    Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF 177.98KB 1
    MJE13005
    Central Semiconductor Power Transistors Scan PDF 62.03KB 1
    MJE13005
    Continental Device India Semiconductor Device Data Book 1996 Scan PDF 86.98KB 1
    MJE13005
    General Electric Power Transistor Data Book 1985 Scan PDF 233.87KB 4
    MJE13005
    Korea Electronics Switching Transistor Scan PDF 440.44KB 3
    MJE13005
    Korea Electronics TRIPLE DIFFUSED NPN TRANSISTOR Scan PDF 336.6KB 3
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    MJE13005 Price and Stock

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    onsemi MJE13005G

    4.0 A, 400 V NPN Bipolar Power Transistor - Rail/Tube (Alt: MJE13005G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MJE13005G Tube 1,550
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    RS MJE13005G Bulk 1
    • 1 $0.68
    • 10 $0.68
    • 100 $0.67
    • 1000 $0.58
    • 10000 $0.58
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    Bristol Electronics MJE13005G 50
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    ComSIT USA MJE13005G 27
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    Vyrian MJE13005G 889
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    Central Semiconductor Corp MJE13005 SL TIN/LEAD

    Transistor GP BJT NPN 400V 4A 3-Pin TO-220 Sleeve (Alt: MJE13005 SL TIN/LEAD)
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    Avnet Americas MJE13005 SL TIN/LEAD 450
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    Mouser Electronics MJE13005 SL TIN/LEAD
    • 1 -
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    • 1000 $1.65
    • 10000 $1.55
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    SPC Multicomp MJE13005

    TRANS, BJT, SINGLE, NPN, 400V, 4MHZ;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MJE13005 Bulk 10,291 1
    • 1 $0.96
    • 10 $0.82
    • 100 $0.63
    • 1000 $0.49
    • 10000 $0.38
    Buy Now

    Motorola Semiconductor Products MJE13005

    Trans GP BJT NPN 400V 4A 75000mW 3-Pin(3+Tab) TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MJE13005 19,806 1
    • 1 $2.55
    • 10 $1.66
    • 100 $1.20
    • 1000 $1.10
    • 10000 $1.10
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    Quest Components () MJE13005 360
    • 1 $1.40
    • 10 $1.40
    • 100 $0.70
    • 1000 $0.56
    • 10000 $0.56
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    MJE13005 318
    • 1 $0.84
    • 10 $0.84
    • 100 $0.39
    • 1000 $0.39
    • 10000 $0.39
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    MJE13005 276
    • 1 $1.40
    • 10 $1.40
    • 100 $0.70
    • 1000 $0.70
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    MJE13005 93
    • 1 $1.00
    • 10 $0.80
    • 100 $0.50
    • 1000 $0.50
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    MJE13005 40
    • 1 $1.50
    • 10 $1.20
    • 100 $0.90
    • 1000 $0.90
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    Others MJE13005

    Trans GP BJT NPN 400V 4A 75000mW 3-Pin(3+Tab) TO-220
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    Bristol Electronics MJE13005 651
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    Quest Components () MJE13005 25
    • 1 $1.44
    • 10 $1.15
    • 100 $0.86
    • 1000 $0.86
    • 10000 $0.86
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    MJE13005 8
    • 1 $3.78
    • 10 $2.83
    • 100 $2.83
    • 1000 $2.83
    • 10000 $2.83
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    MJE13005 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T1P122

    Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
    Contextual Info: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400


    OCR Scan
    2sc3039mje13005t1p49mje30sst+13tip31at1p41atip120cil4006bd211bd243t1p122t1p41ct1p41t1p312sd880y2sd88d2n529b PDF

    equivalent mje13005

    Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
    Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original
    mje13005o-220qw-r203-018equivalent mje13005+32n2222 transistor output curvetransistor mje13005mje13005 equivalent PDF

    equivalent mje13005

    Abstract: 1N4933 equivalent
    Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original
    mje13005o-220qw-r203-018equivalent mje13005+11n4933 equivalent PDF

    equivalent mje13005

    Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original
    mje13005mje13005l-x-t60-kqw-r203-018equivalent mje13005+7ferroxcube core2n2222 curvemje13005 equivalentequivalent transistor 2n2905mr826 equivalentcircuit based on mje13005transistor mje13005 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original
    mje13005-kqw-r203-045 PDF

    2n222 TRANSISTOR

    Abstract: MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222
    Contextual Info: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,


    Original
    mje13005gmje13005/d2n222 transistorequivalent mje13005+7transistors mje13005transistor 2n222circuit based on mje130051n493amp241n58202n222 PDF

    IC2A

    Abstract: MJE13005F
    Contextual Info: SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES ・Excellent Switching Times


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    mje13005fic2a PDF

    13005D

    Abstract: transistor 13005D MJE13005D 13005 transistor MJE -1103 MJE13005-D diode 611 mje130 MJE1300
    Contextual Info: SEMICONDUCTOR MJE13005D MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K MJE 2 13005D 3 No. 611 4 Item Marking Description KEC K KEC CORP. MJE Device Name MJE13005D 13005D 2007. 9. 4 hFE Grade - Lot No.


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    mje13005do-220ab13005dtransistor 13005d+613005transistor mje -1103mje13005-ddiode 611mje130mje1300 PDF

    application notes MJE13005

    Contextual Info: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJE13005 Features • Mounting Torgue: 5 in-lbs Maximum Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


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    mje13005-55oc3dd13005o-220+1application notes mje13005 PDF

    equivalent mje13005

    Abstract: transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G
    Contextual Info: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


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    mje13005mje13005/dequivalent mje13005transistor 2n222+7mje13005-52n222 transistor1n4931n49332n2222n2905mje13005g PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  TO-220 TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original
    mje13005do-220o-220fo-251+1qw-r502-379 PDF

    Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


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    mje13005o-220fco000qw-r219-001+1100ms PDF

    mje13005df

    Abstract: IC free
    Contextual Info: SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A ・Built-in Free wheeling Diode makes efficient anti saturation operation. C P ・Low base drive requirement. B E SYMBOL RATING UNIT


    Original
    mje13005dfic free PDF

    equivalent mje13005

    Abstract: circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original
    mje13005o-220o-220fmje13005l+10qw-r203-018equivalent mje13005circuit based on mje13005mje13005l-ta3-ttransistor b c167mje13005-ta3-tmje13005-tf3-tmje210mr8261n4933 PDF

    MJE13005H

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original
    mje13005-hqw-r221-024mje13005h PDF

    MJE13005L

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original
    mje13005-qqw-r221-027mje13005l PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original
    mje13005-kqw-r203-045 PDF

    Contextual Info: MOTOROLA SC XSTRS/R F 15E D J - t 3 t 7 S S M 000530*! S | T - 3 3 -J 3 MOTOROLA MJE13004 MJE13005 SEMICONDUCTOR TECHNICAL DATA 4 AM PERE I o s i { » 'n o r s D a t a S h e e t NPN SILICON POWER TRANSISTORS SWITCHMODE S E R IE S NPN SILICO N POWER T R A N SIST O R S


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    mje13004mje13005 PDF

    TRANSISTOR 400 VOLTS

    Abstract: MJE13005 MJE13005G
    Contextual Info: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


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    mje13005transistor 400 voltsmje13005g PDF

    mje13005

    Abstract: MJE-13005
    Contextual Info: MJE13005 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM


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    mje13005o-220mje-13005 PDF

    MJE13005H

    Abstract: MJE13005HL Shenzhen SI Semiconductors, LTD
    Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13005HL MJE LOW VOLTAGE SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING SUITABLE FOR 110V CIRCUIT MODE WIDE SOA FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings


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    mje13005hlo-220mje13005hshenzhen si semiconductors, ltd PDF

    mje13005d equivalent

    Abstract: IC free MJE13005D IC free transistor hFE-100 low power
    Contextual Info: SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. A O C Suitable for half bridge light ballast Applications. F Low base drive requirement.


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    mje13005d05rrentmje13005d equivalentic free+2ic free transistorhfe-100 low power PDF

    transistor hh 004

    Abstract: E13005F hh 004 f E1300 W2W TRANSISTOR MJE13005F
    Contextual Info: SEMICONDUCTOR MJE13005F TECH NICAL D A T A t r ip le d iffu s e d npn t r a n s is t o r SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES • Excellent Switching Times


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    mje13005ftransistor hh 004e13005fhh 004 f+2e1300w2w transistor PDF

    MJE13004

    Abstract: application notes MJE13005 equivalent mje13005 MJE13005
    Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS


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    mje13004mje13005o-220c-120+3mje13005rev240402eapplication notes mje13005equivalent mje13005 PDF