MJE 180 EQUIVALENT Search Results

TYN 208 equivalent

Abstract: bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent
Contextual Info: Index/Cross R e fe re n ce Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page 1N 34A 118 1N2977B 128 1N3320B 128 1N 60 118 1N2978B 128 1N3321B 128 1N 67 A

BRX49 equivalent

Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
Contextual Info: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

r5609

Abstract: 8E-15 A741 THS4001 bf 333 transistor 8E15 BR-049 296E-18 BF100 transistor SLOA029
Contextual Info: Application Report SLOA029 - October 1999 THS4001 SPICE Model Performance James Karki ABSTRACT This document outlines the SPICE model of the THS4001 high-speed monolithic operational amplifier. General information about the model file structure, performance comparison,

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

Contextual Info: IH 5 1 4 0 - IH 5 1 4 5 IH 5140-IH 5145 S E M I C O N D U C T O R High-Level CMOS Analog Switch GENERAL DESCRIPTION FEATURES T h e IH 5140 Fam ily o f C M OS sw itches utilizes H arris’ latch-tree junction isolated processing to build th e fa ste st sw itches currently available. Th e se sw itche s can b e toggled

FR180

Abstract: BFR180
Contextual Info: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA * fT = 7G H z F = 2.1dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

AB-194

Abstract: OPA685 THS4011 THS4151 transistor zx series
Contextual Info: Signal Conditioning: High-Speed Op Amps Texas Instruments Incorporated Designing for low distortion with high-speed op amps By James L. Karki Member, Group Technical Staff, High-Performance Linear Introduction The output of any amplifier contains the desired signal

Contextual Info: BFR 180 NPN Silicon RF Transistor 3
For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEM ENS BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA f l —7GHz • F = 2 .1 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Q62702-F1296

Contextual Info: BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Q62702-F1377

Contextual Info: BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

VPS05178

Contextual Info: BFP 180 NPN Silicon RF Transistor 3
For low-power amplifiers in mobile communication systems pager at collector 4 currents from 0.2 mA to 2.5 mA f T = 7 GHz 2
F = 2.1 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!

to225aa

Abstract: BD678 bd676 BD682 equivalent to225aa case
Contextual Info: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.

START420

Abstract: START420TR Transistor F 0552 BF280 TRANSISTOR C436
Contextual Info: START420 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation

PIN diode SPICE model

Abstract: BF100 transistor 8E-15 A741 THS3001 pspice model list transistor
Contextual Info: Application Report SLOA038 - October 1999 THS3001 SPICE Model Performance Jim Karki Mixed Signal Products ABSTRACT This application report outlines the SPICE model of the THS3001 high-speed monolithic operational amplifier. General information about the model file structure, performance comparison, model listing,

BFP620F

Abstract: fa 5571 transistor 3884 BFP620F ACs
Contextual Info: BFP620F NPN Silicon Germanium RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability

transistor k 4213

Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

fa 5571

Abstract: BFP620F transistor 3884
Contextual Info: BFP620F NPN Silicon Germanium RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability

TRANSISTOR MARKING NK

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

transistor 1107

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

fbs MARKING TRANSISTOR

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

IC 7306

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!