MJD32C ST Search Results

TIP31 NPN Transistor diagram

Abstract: TIP32 PNP Transistor 1N5825 MJD31 MJD31C MJD31CRL MJD32 MJD32C MSD6100 TIP31
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

TIP31 PNP Transistor

Abstract: TIP31 NPN Transistor diagram 1N5825 MJD31 MJD31C MJD31CRL MJD32 MJD32C MSD6100 TIP31
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

MJD31C

Abstract: mjd32
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

TIP31 FOOTPRINT

Abstract: MJD31C TIP31 NPN Transistor diagram 1N5825 369D MJD31 MJD32 MJD32C TIP31 TIP32
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

369D

Abstract: MJD31 MJD31C MJD31CG MJD32 MJD32C TIP31 TIP32
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

dpak 369C

Abstract: 369D 369C MJD31 MJD31C MJD31C1 MJD31CG MJD32 MJD32C TIP31
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES

NPN Silicon Power Transistor DPAK

Abstract: TIP31 NPN Transistor diagram dpak 369C 369D data base dpak DPak Package size MJD31CT4G 1N5825 MJD31 MJD31C
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

Contextual Info: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http://onsemi.com Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching

NJVMJD31CT4G

Abstract: NJVMJD31T4G
Contextual Info: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com

mjd31c

Contextual Info: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com

Contextual Info: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com

MJD32C

Contextual Info: DC COMPONENTS CO., LTD. MJD32C DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. TO-252 DPAK Pinning 1 = Base 2 = Collector 3 = Emitter

Contextual Info: MJD32C PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications

MJD31CD

Abstract: transistor 228 npn motorola JD31C transistor motorola 351
Contextual Info: MOTOROLA Order this document by MJD31C/D SEMICONDUCTOR TECHNICAL DATA NPN MJD31C PNP MJD32C Com plem entary Power Transistors DPAK For Surface Mount Applications Motorola Preferred Devices Designed for general purpose amplifier and low speed switching applications.

TIP31 PNP Transistor

Abstract: 1N5825 MJD31C MJD32C MSD6100 TIP31 TIP32 application TIP31 bipolar transistor td tr ts tf
Contextual Info: MOTOROLA Order this document by MJD31C/D SEMICONDUCTOR TECHNICAL DATA NPN MJD31C PNP MJD32C Complementary Power Transistors DPAK For Surface Mount Applications Motorola Preferred Devices Designed for general purpose amplifier and low speed switching applications.

1N5825

Abstract: 369D MJD31 MJD31C MJD32 MJD32C TIP31 TIP32
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS

TIP31 NPN Transistor diagram

Abstract: MJD32C 369D data base dpak 1N5825 MJD31 MJD31C MJD32 TIP31 TIP32
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors MJD32C TO-252 TRANSISTOR PNP FEATURES z Designed for General Purpose Amplifier and Low Speed Switching Applications z Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

d1 marking code dpak transistor

Abstract: dpak-3 1000 watt amplifier TIP31 FOOTPRINT PNP Silicon Power Transistor DPAK 369A-13 NPN Silicon Power Transistor DPAK 500 watt power circuit diagram 500 watts amplifier all ic data
Contextual Info: MJD31C NPN MJD32C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves

J32C

Abstract: J31C J31C TO-252 smd j31c J31C ON J31C smd j32-C smd j32c MJD32 J31C MARKING
Contextual Info: Transistors SMD Type Complementary Power Transistors MJD31,MJD31C NPN MJD32,MJD32C(PNP) TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Lead Formed for Surface Mount Applications in Plastic Sleeves Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1

3543

Contextual Info: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

095b3

Abstract: MJD32C-13 TO252-3L MJD32C
Contextual Info: MJD32C PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications

d1 marking code dpak transistor

Abstract: MJD32CT4
Contextual Info: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

MJD32CQ-13

Abstract: TRANSISTOR marking code 432 MJD32C
Contextual Info: MJD32C 100V HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • Epitaxial Planar Die Construction High Collector-Emitter Voltage BVCEO > -100V Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications