MJ6316HX Search Results

8002 Amplifier IC

Abstract: MJ6316HX MJ6318HX
Contextual Info: 4 t E ? • b3fa?2S4 0013103 3 ■ f lO T b 7 = 3 3 -0 / MOTOROLA SC X S T R S / R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA NPN MJ6316HX, HXV PNP MJ6318HX, HXV NPN/PNP Silicon Complementary Power Transistors duo mini Discrete Military Operation . .designed for generat-purpose power switching and amplifier applications.

Contextual Info: MJ6316HXV Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)90# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)7.0

MRF660

Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
Contextual Info: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor