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    MJ S1 G 8 Price and Stock

    onsemi

    onsemi NVMJS1D7N04CTWG

    MOSFETs TRENCH 6 40V SL NFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NVMJS1D7N04CTWG 9,359
    • 1 $1.72
    • 10 $1.38
    • 100 $0.97
    • 1000 $0.77
    • 10000 $0.71
    		Buy Now

    onsemi NTMJS1D5N04CLTWG

    MOSFETs 40V 1.55 mOhm 185A Single N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NTMJS1D5N04CLTWG 3,000
    • 1 $2.82
    • 10 $1.83
    • 100 $1.39
    • 1000 $0.92
    • 10000 $0.71
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    onsemi NVMJS1D2N04CLTWG

    MOSFETs T6 40V LL LFPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NVMJS1D2N04CLTWG 3,000
    • 1 $2.47
    • 10 $1.79
    • 100 $1.28
    • 1000 $1.03
    • 10000 $0.89
    		Buy Now

    onsemi NVMJS1D5N04CLTWG

    MOSFETs 40V 1.55 mOhm 185A Single N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NVMJS1D5N04CLTWG 2,965
    • 1 $1.75
    • 10 $1.41
    • 100 $1.02
    • 1000 $0.77
    • 10000 $0.69
    		Buy Now

    onsemi NVMJS1D0N04CTWG

    MOSFETs TRENCH 6 40V SL NFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NVMJS1D0N04CTWG 2,800
    • 1 $3.09
    • 10 $2.21
    • 100 $1.59
    • 1000 $1.36
    • 10000 $1.13
    		Buy Now
    Find more MJ S1 G 8 price and stock on Findchips.com

    MJ S1 G 8 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd diode S6

    Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
    Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		220-004P3 220-003P3-SMD 220-004P3 20081126f smd diode S6 smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6 PDF

    M7849

    Abstract: ADQ-90 CJ725 ED91
    Contextual Info: NE W! Surface-Mount Power Splitter/Combiner 2 Way-90°, 50Ω, 55 to 90 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter 0.5W max. • • • • Pin Configuration SUM PORT


    Original     		Way-90° ADQ-90 CJ725 M78490 ED-9192/1 M7849 ADQ-90 CJ725 ED91 PDF

    Contextual Info: NE W! Surface-Mount Power Splitter/Combiner 2 Way-90°, 50Ω, ADQ-90 55 to 90 MHz Maximum Ratings Features Operating Temperature -20°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter 0.5W max. • • • • Pin Configuration good isolation, 26 dB typ.


    Original     		Way-90° ADQ-90 CJ725 ADQ-90 M78490 ED-9192/1 PDF

    Diode smd s6 68

    Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
    Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 IF110 ID110 A0-0085X1 100-085X1-SL 100-085X1-SMD 100-0085X1 100-0085X1 Diode smd s6 68 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77 PDF

    QQQ828

    Abstract: SCL-2-10
    Contextual Info: NE W! BLUE CELL Surface Mount Power Splitter/Combiner 2 Way-0° 50Ω SCL-2-10 800 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 125°C Power Input as a splitter 10W max. Internal Dissipation


    Original     		SCL-2-10 QQQ828 M79898 ED-6984C/2 QQQ828 SCL-2-10 PDF

    S4 42 DIODE

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
    Contextual Info: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 IF110 ID110 100-0085X1-SMD 100-0085X1 100-0085X1 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37 PDF

    S4 42 DIODE

    Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
    Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 ID110 IF110 100-0085X1 100-0085X1-SMD 100-0085X1 S4 42 DIODE smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37 PDF

    IXA 155

    Abstract: 20PG1200DHGLB 4008g
    Contextual Info: IXA 20PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 32 A = 1200 V VCES VCE sat typ = 1.8 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features


    Original     		20PG1200DHGLB E72873 20120131b IXA 155 20PG1200DHGLB 4008g PDF

    Contextual Info: IXA 20PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 32 A = 1200 V VCES VCE sat typ = 1.8 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features


    Original     		20PG1200DHGLB E72873 20110616a PDF

    Contextual Info: IXA 30PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 43 A = 1200 V VCES VCE sat typ = 1.9 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features


    Original     		30PG1200DHGLB E72873 paralleli70 20120131b PDF

    Contextual Info: IXA 30PG1200DHGLB Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE sat typ = 1.9 V XPT IGBT phaseleg ISOPLUS Surface Mount Power Device 7 D3 6 9 D1 S1 4 7 8 1 3 2 5 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 4 6 5 2 E72873 8 Features


    Original     		30PG1200DHGLB E72873 20120131b PDF

    Contextual Info: IXA 20PG1200DHGLB Advanced Technical Information IC25 = 32 A = 1200 V VCES VCE sat typ = 1.8 V XPT IGBT phaseleg ISOPLUS Surface Mount Power Device 7 D3 6 9 D1 S1 4 7 8 1 3 2 5 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 4 6 5 2 E72873 8 Features


    Original     		20PG1200DHGLB E72873 20120131b PDF

    Contextual Info: IXA 30PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 43 A = 1200 V VCES VCE sat typ = 1.9 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features


    Original     		30PG1200DHGLB E72873 20110616a PDF

    Contextual Info: IXA 40PG1200DHGLB Advanced Technical Information IC25 = 63 A = 1200 V VCES VCE sat typ = 1.85 V XPT IGBT phaseleg ISOPLUS Surface Mount Power Device 7 D3 6 9 D1 S1 4 7 8 1 3 2 5 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 4 6 5 2 E72873 8 Features


    Original     		40PG1200DHGLB E72873 20120131b PDF

    Contextual Info: IXA 40PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 63 A = 1200 V VCES VCE sat typ = 1.85 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features


    Original     		40PG1200DHGLB E72873 20120131b PDF

    MTI85W100GC

    Contextual Info: MTI 85W100GC Three phase full Bridge VDSS = 100 V = 110 A ID25 RDSon typ. = 3.2 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 G2 S2 G4 G6 S4 S6 L- iv Symbol Conditions Maximum Ratings TJ = 25°C to 150°C max DC gate voltage


    Original     		85W100GC MTI85W100GC MTI85W100GC-SMD MTI85W100GC PDF

    TPIC6B259

    Abstract: BTA50
    Contextual Info: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 – APRIL 1994 – REVISED JULY 1995 • • • • • • • Low rDS on . . . 5 Ω Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability


    Original     		TPIC6B259 SLIS030 150-mA 500-mA TPIC6B259 BTA50 PDF

    TPIC6B259

    Abstract: BTA50
    Contextual Info: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 – APRIL 1994 – REVISED JULY 1995 • • • • • • • Low rDS on . . . 5 Ω Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability


    Original     		TPIC6B259 SLIS030 150-mA 500-mA TPIC6B259 BTA50 PDF

    TPIC6B259

    Contextual Info: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 – APRIL 1994 – REVISED JULY 1995 D D D D D D D Low rDS on . . . 5 Ω Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability


    Original     		TPIC6B259 SLIS030 150-mA 500-mA TPIC6B259 PDF

    TPIC6259

    Contextual Info: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APIRL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output


    Original     		TPIC6259 SLIS009A 250-mA TPIC6259 PDF

    8-Bit Addressable Latches

    Abstract: TPIC6B259 dmos-transistor BTA50
    Contextual Info: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 – APRIL 1994 • • • • • • • Low rDS on . . . 5 Ω Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability


    Original     		TPIC6B259 SLIS030 150-mA 500-mA 8-Bit Addressable Latches TPIC6B259 dmos-transistor BTA50 PDF

    TPIC6259

    Contextual Info: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APIRL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output


    Original     		TPIC6259 SLIS009A 250-mA TPIC6259 PDF

    TPIC6B259

    Contextual Info: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 – APRIL 1994 – REVISED JULY 1995 • • • • • • • Low rDS on . . . 5 Ω Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability


    Original     		TPIC6B259 SLIS030 150-mA 500-mA TPIC6B259 PDF

    TPIC6259

    Contextual Info: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APIRL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output


    Original     		TPIC6259 SLIS009A 250-mA TPIC6259 PDF