MJ 68A Search Results

100n60

Abstract: IXXR100N60B3H1
Contextual Info: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

Contextual Info: XPTTM 600V IGBT GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC110 = 68A VCE(sat) ≤ 1.80V Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

Contextual Info: Preliminary Technical Information VCES = 600V IC110 = 68A VCE sat ≤ 1.35V IXGN72N60A3 GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

72N60A3

Abstract: IXGN72N60A3 C3632
Contextual Info: Preliminary Technical Information IXGN72N60A3 GenX3TM 600V IGBT VCES = 600V IC110 = 68A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

68A diode

Abstract: k 68a APTM100A12ST
Contextual Info: APTM100A12ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 120mΩ max @ Tj = 25°C ID = 68A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies S2 G2 NTC1 NTC2

Contextual Info: APTM100A12ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 120mΩ Ω max @ Tj = 25°C ID = 68A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Contextual Info: TechnicalInformation 6PS04012E4DG36022 PrimeSTACK Preliminarydata  Keydata Generalinformation  sensorsincluded.

irfp4568pbf

Contextual Info: PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)

IRFP4568

Abstract: IRFP4568PBF DM 103A 103A irf 151 AN-994
Contextual Info: PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)

IRL2203N equivalent

Abstract: C564 c562
Contextual Info: PD - 9.1378B International IOR Rectifier IRLI2203N HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ® Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

Contextual Info: AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

MARKING CODE 41A

Contextual Info: StrongIRFET IRFH7787PbF HEXFET Power MOSFET Application • Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

AUIRF7669

Contextual Info: PD - 97536A AUTOMOTIVE GRADE Automotive DirectFET™ Power MOSFET ‚ V BR DSS 100V RDS(on) typ. 3.5mΩ max. 4.4mΩ ID (Silicon Limited) 114A Qg 81nC • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications

Contextual Info: PD - 96317B AUIRF7648M2TR AUIRF7648M2TR1 • • AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET ‚ V BR DSS 60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 5.5mΩ other Heavy Load Applications max. 7.0mΩ

Contextual Info: PD - 97536A AUTOMOTIVE GRADE Automotive DirectFET™ Power MOSFET ‚ V BR DSS 100V RDS(on) typ. 3.5mΩ max. 4.4mΩ ID (Silicon Limited) 114A Qg 81nC • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications

AUIRF7669

Abstract: auirf7669l2tr AUIRF7669L2TR1
Contextual Info: PD - 97536 AUTOMOTIVE GRADE Automotive DirectFET™ Power MOSFET ‚ V BR DSS 100V RDS(on) typ. 3.5mΩ max. 4.4mΩ ID (Silicon Limited) 114A Qg 81nC • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications

AUIRF7648M2

Abstract: BV 726 B
Contextual Info: PD - 96317B AUIRF7648M2TR AUIRF7648M2TR1 • • AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET ‚ V BR DSS 60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 5.5mΩ other Heavy Load Applications max. 7.0mΩ

AUIRF7648M2TR1

Contextual Info: PD - 96317 AUTOMOTIVE GRADE AUIRF7648M2TR AUIRF7648M2TR1 DirectFET™ Power MOSFET ‚ V BR DSS RDS(on) typ. • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile

2n0607

Abstract: INFINEON PART MARKING to263 2n0607 equivalent ANPS071E SPB80N06S2-07 SPI80N06S2-07 SPP80N06S2-07 2N06
Contextual Info: SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 6.6 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1

Contextual Info: SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS
Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level P- TO263 -3-2
175°C operating temperature V 6.5 m
100 A P- TO220 -3-1
Avalanche rated
dv/dt rated

3n0408

Abstract: 3N04
Contextual Info: Preliminary Data Sheet OptiMOS -T Power-Transistor IPD50N04S3-08 Product Summary V DS 40 V R DS on ,max 8.0 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

2n0607

Abstract: SMD MARKING "68A" SPP80N06S2-07 Q67060S60 2N060 Q67060-S6026
Contextual Info: Preliminary data SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V • Enhancement mode R DS on 6.6 mΩ • 175°C operating temperature ID 80 A • Avalanche rated P-TO262-3-1 P-TO263-3-2