MJ 52 DIODE Search Results

Contextual Info: PD 9.1449A International IOR Rectifier IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

IRGBC30MD2

Contextual Info: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

transistor c373

Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
Contextual Info: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

APT0502

Abstract: APT0601 APTM100UM45FAG dk qg
Contextual Info: APTM100UM45FAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode

APT0502

Abstract: APT0601 APTM100UM45DAG
Contextual Info: APTM100UM45DAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single switch with Series diode MOSFET Power Module SK S D G DK S DK Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK S D G DK S VDSS = 1000V RDSon = 45m typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C

G50N60

Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode VCES = 600V IC110 = 21A VCE sat ≤ 2.50V IXGJ50N60C4D1 (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

55N120AU1

Contextual Info: High Voltage IGBT with Diode IXSN 55N120AU1 VCES IC25 VCE sat = 1200 V = 110 A = 4V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 A VGES Continuous ±20 V VGEM

32N60AU1

Abstract: IXGH32N60AU1
Contextual Info: HiPerFASTTM IGBT with Diode IXGH 32N60AU1 Combi Pack VCES IC25 VCE sat tfi = = = = 600 V 60 A 2.9 V 175 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

Contextual Info: MKE 11R600DCGFC ID25 = 15 A VDSS = 600 V RDS on max = 0.165 CoolMOS 1) Power MOSFET with SiC Diode Boost topology ISOPLUS i4™ 3 Electrically isolated back surface 2500 V electrical isolation SiC D 4 1  1 E72873 T 2 Features MOSFET T Symbol Conditions

APT0502

Abstract: APT0601 APTGT225DU170G
Contextual Info: APTGT225DU170G Dual common source Trench + Field Stop IGBT Power Module C2 Q2 G2 E1 E2 E G1 C1 E C2 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes

MJI-25

Contextual Info: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2

Contextual Info: International ^Rectifier PD - 5.022B CPV364MF Fast IGBT IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to

IXGR72N60A3U1

Contextual Info: IXGR72N60A3U1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) Ultra-low Vsat PT IGBTs for up to 5kHz switching Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient

100n60

Abstract: IXXR100N60B3H1
Contextual Info: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

iXYN100N120C3H1

Abstract: ixyn100n120c3
Contextual Info: Advance Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: VVZB 120 VRRM = 1200-1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM Type V VVZB 120-12 io1 VVZB 120-14 io1 VVZB 120-16 io1 Conditions IdAV IFRMS/ITRMS Tcase= 80°C, sinusoidal 120°

TPCC8A01-H

Contextual Info: TPCC8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCC8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Built-in a Schottky barrier diode

Contextual Info: IXGH48N60A3D1 GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V

IXGH50N60C4D1

Abstract: IXGQ50N60C4D1 G50N60 g50n
Contextual Info: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 46A VCE sat ≤ 2.3V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V

IRG4PC40KD

Abstract: irg4pc
Contextual Info: PD -91584A IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A Features • • • • • • • • 1200 Volts 52 Amps 3.2 Volts vce(sat) Rugged polysilicon gate cell structure high current handling capability, latch-proof

haw 25-p

Abstract: IRG4PC50KD IRG4PC50 91582 irg4p*50kd diode lt 247
Contextual Info: PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● Short Circuit Rated UltraFast IGBT C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated