MITSUBISHI QM Search Results

transistor

Abstract: QM30TB-H technical data mitsubishi KE924503 ke92 FILE TRANSISTOR
Contextual Info: Mitsubishi QM30TB-H datasheet technical data Page 1 of 6 Mitsubishi QM30TB-H = Powerex KE924503 7/28/2008 Mitsubishi QM30TB-H datasheet technical data

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Welders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 5.4 M4 M6 Feb. 1999 ♦ MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES

Mitsubishi transistor

Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
Contextual Info: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm OC BO - m -M - - < EO ó ÓE BX M4 Feb. 1999 ♦ MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM D im ensions in mm Feb. 1999 A MITSUBISHI ELECTRIC

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM1000HA-24B HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM D im ensions in mm C Feb. 1999 ♦ MITSUBISHI ELECTRIC

M66310FP

Abstract: M6831 M/AHD-05-0500
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

MITSUBISHI GATE ARRAY

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

laf 001

Abstract: stars and stripes 100P6S-A M65761FP PD20 tESTO AG Temperature Probe CXO-11 hitachi j50
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

pdro

Abstract: M65762FP PD10 PD26 PD27 PD28 PD29 eMPIA
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE Q M 100TX1-H APPLICATION Inverters, Servo drives, DC motor controllers, CVCF, NC equipment, Welders OUTLINE DRAW ING & C IRCUIT DIAG RAM D im ensions in mm Feb. 1999 ♦ MITSUBISHI

diode b24a

Abstract: diode v3e Mitsubishi transistor QM600H
Contextual Info: MITSUBISHI TRANSISTOR MODULES f QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, W elders OUTLINE DRAWING 8t CIRCUIT DIAGRAM Dimensions in mm 9e B°-r—C - V 'A - — wE O Ô BX M4 2 - 210 OE | S MITSUBISHI TRANSISTOR MODULES

mitsubishi PM20CSJ060

Abstract: mitsubishi PM30CSJ060 Mitsubishi Electric IGBT MODULES Mitsubishi IPM module PS11015 mitsubishi power Modules PM30ctj060-3 m57962l M57959L/M57962L pm25rsb120
Contextual Info: Power Modules Power Modules MOS Power Modules BIPOLAR Preceding Page MITSUBISHI ELECTRIC CORPORATION Power Modules MOS Guidance IGBT Modules CIB Converter Inverter Brake Modules Intelligent Power Modules (IPMs) Hybrid ICs Applications Preceding Page © MITSUBISHI ELECTRIC CORPORATION

74LS04D

Abstract: mitsubishi lot code HBM 00-01 74ls04d datasheet TI Ji Bipolar LINEAR TECHNOLOGY date code JI Bipolar 500 mold compound JI Linear Bipolar Products TL 170C
Contextual Info: TEXAS INSTRUMENTS Final Notification of Mitsubishi Silicon of America MSA Second Source Wafer Qualification for Starting 125mm Substrates in Sherman, Texas Wafer Fab July 22, 1999 Abstract The Texas Instruments Wafer Fabrication Facility in Sherman, Texas (SFAB) has qualified Mitsubishi

ES403

Abstract: t60404
Contextual Info: MITSUBISHI TRANSISTOR MODULES | QM100DY-2HK i HIGH POWER SWITCHING USE \ INSULATED TYPE ! - . I «. n QM100DY-2HK • • • • • lc Collector current. 100A

all transistor

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50TB-24 I _INSULATED TYPE j QM50TB-24 Collector current. BOA Vcex Collector-emitter voltage. 1200V hFE DC current gain. 75 Insulated Type

mitsubishi CR3CM

Abstract: CR3CM mITSUBISHI FANS 1I400 251C General Electric thyristor CR3CM-1 Thyristor CR3CM-8
Contextual Info: MITSUBISHI THYRISTOR CR3CM LOW POWER, GENERAL USE LEAD-MOUNTED, GLASS-PASSIVATION T YP E DESCRIPTION O U T L IN E DRAW ING Dimension : mm Mitsubishi type C R 3 C M -1 ~ 1 2 are glass passivated junction typ e thyristors fo r use in low power control and rectification.

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-24B • Ic Collector current. 50A Collector-emitter voltage. 1200V DC current gain. 750

8206a

Abstract: Mitsubishi Electric Transistor MODULES Mitsubishi transistor QM30t 30a diode
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TX-HB MEDIUM POWER SWITCHING USE I _ INSULATED TYPE j ! OM30TX-HB i | * * * * * lc Collector current. 30A V cex Collector-emitter voltage.600V hFE

Contextual Info: MITSUBISHI TRANSISTOR MODULES i QM300DY-24 j j j HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 • Ic • V cex • hFE Collector current. 300A

pj 83 diode

Abstract: Mitsubishi transistor mitsubishi servo power module WA200
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM20KD-HB lc Collector current. 20A VCEX Collector-emitter voltage.600V hFE DC current gain. 250

Contextual Info: MITSUBISHI TRANSISTOR MODULES ? QM200DY-24B { HIGH POWER SWITCHING USE I _ INSULATED TYPE f QM2000Y-24B Collector current. 200A Coltector-emitter voltage. 1200V • hFE DC current gain. 750

Mitsubishi transistor

Abstract: 53c300 QM15 QM150E
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150E2Y/E3Y-HK HIGH POWER SWITCHING USE INSULATED TYPE QM150E2Y/E3Y-HK Collector current. 150A Collector-emitter voltage. 600V • hFE DC current gain. 75

Contextual Info: f MITSUBISHI TRANSISTOR MODULES j QM400HA-24 ! HIGH POWER SWITCHING USE [ _INSULATED TYPE f QM400HA-24 Collector current. 400A Collector-emitter voltage.1200V • hFE DC current gain.75