MITSUBISHI MARKING EXAMPLE Search Results

MITSUBISHI frequency counter ics

Contextual Info: MITSUBISHI BIPOLAR DIGITAL ICs M64893AFP/AGP New Product SERIAL INPUT PLL FREQUENCY SYNTHESIZER FOR TV/VCR Description The M64893AFP/AGP is a semiconductor integrated circuit consisting of PLL frequency synthesizer for TV/VCR using Bip process. It contains the prescaler with

TBT 136

Abstract: M64893AFP tuner 5002 M52423 MITSUBISHI frequency counter ics
Contextual Info: MITSUBISHI BIPOLAR DIGITAL ICs M64893AFP/AGP New Product SERIAL INPUT PLL FREQUENCY SYNTHESIZER FOR TV/VCR Description The M64893AFP/AGP is a semiconductor integrated circuit consisting of PLL frequency synthesizer for TV/VCR using Bip process. It contains the prescaler with

100OHM

Abstract: RD45HMF1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

147J

Abstract: 100OHM RD30HUF1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

RD20HMF1

Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers

RD70HHF

Abstract: RD70HHF1-101 RD70HHF1 10Turns mosfet HF amplifier TRANSISTOR D 1765 738
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

RD60HUF

Abstract: mitsubishi rf 100OHM RD60HUF1 RD60HUF1-101
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

RA01L8693MA

Abstract: RF MOSFET MODULE
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L8693MA RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

RD 15 hf mitsubishi

Abstract: RD100HHF1 RD100HHF1-101 MITSUBISHI RF POWER MOS FET rd 100 100w RD100HHF1 rd100hhf hf power transistor mosfet hf amplifier 100w Mitsubishi transistor rf final RD100HH
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

RD30HVF1

Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

RD06HHF1

Abstract: RD06HHF1-101 RD06HHF 10TURNS 40gp0
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

RD06HVF1

Abstract: Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

ra01l8693ma

Abstract: RF MOSFET MODULE ra MITSUBISHI marking example
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L8693MA RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

RD16HHF1 application notes

Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

transistor 9527

Abstract: 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

RD70HVF1

Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically

RD02MUS1B

Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15

RA60H1317M1A

Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to

H11S

Abstract: RA05H9595M RA05H9595M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.

MOSFET Amplifier Module

Abstract: f953 945 mosfet
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

RA35H1516M

Abstract: RA35H1516M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to

grm708

Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

Contextual Info: MITSUBISHI MICROCOMPUTERS M35054-XXXFP/M35055-XXXFP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION The M35054-XXXFP and M35055-XXXFP are TV screen display con­ PIN CONFIGURATION TOP VIEW trol 1C which can be used to display information such as number of

RD07MVS1-101

Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor