MITSUBISHI LOT NO Search Results

mitsubishi lot number

Contextual Info: Related to M30201 group devices. GRADE A MESC TECHNICAL NEWS No.M16C-47-0003 M30201 Flash Memory Version Cautions for Using Flash Programming Standard Serial I/O Mode 1. Affected devices • M30201F6FP, M30201F6TFP Mitsubishi lot number is "0XXXXX". • M30201F6SP (Mitsubishi lot number is "0XXXXX".)

MGFS36E2527

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE. 36E 2527 Lot No. FEATURES • • • • •

SWT-9

Abstract: ic 3845 pin diagram 36e 2527 diagram TA 306 8 pin ic POUT25
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E3436A is a GaAs RF amplifier designed for WiMAX CPE. 36E 3436A 2527 Lot No. FEATURES • • •

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •

MGFS36E2527

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2527 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2527 Lot No. FEATURES • • • • •

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2527 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2527 Lot No. FEATURES • • • • •

mitsubishi vcb

Abstract: MGFS36E2325 16e-2005
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •

PM30RSF060

Abstract: PM20CSJ060 pm10csj060 mitsubishi PM30CSJ060 PM50RSK060 380VDC PM75RSA060 PM30ctj060-3 AC200 M57147AU-01
Contextual Info: MITSUBISHI HYBRID IC M57147AU-01 IPM POWER SUPPLY UNIT OUTLINE DRAWING Lot No M57147AU-01 XXXX 1 18 36 Pin No 19 1.6 33 MAX 82MAX 0.35±0.2 80.35 2.54 0.55±0.1 2.54✕17=43 Electrical isolation between input and outputs . 1500Vrms 1minute

mitsubishi PM30CSJ060

Abstract: PM20CSJ060 PM30RSF060 PM30ctj060-3 pm10csj060 PM20CS PM15CSJ060 PM20CTM060 M060 M57146U-01
Contextual Info: MITSUBISHI HYBRID IC M57146U-01 IPM POWER SUPPLY UNIT OUTLINE DRAWING 5.0 Lot No. 4-φ4.5 5.0 5.0 12 CN1 CN2 5.0 5.0 76.0±0.7 5.0 65.0±0.7 3 12 4 5 78 1 CN3 5.0 FEATURES ● Output . +15V, 50mAX3 +15V, 100mAX1

39E2527A

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device

39E2527A

Abstract: GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28

39E3336

Abstract: MGFS39E3336 SWT-9 GRM188B31E105KA75 spectrum emission mask wimax MGFS39E3336-01 GRM155B11H1 160kO GRM188B31E
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28

mitsubishi Lot No

Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027 Date : 10th May. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL:

74LS04D

Abstract: mitsubishi lot code HBM 00-01 74ls04d datasheet TI Ji Bipolar LINEAR TECHNOLOGY date code JI Bipolar 500 mold compound JI Linear Bipolar Products TL 170C
Contextual Info: TEXAS INSTRUMENTS Final Notification of Mitsubishi Silicon of America MSA Second Source Wafer Qualification for Starting 125mm Substrates in Sherman, Texas Wafer Fab July 22, 1999 Abstract The Texas Instruments Wafer Fabrication Facility in Sherman, Texas (SFAB) has qualified Mitsubishi

RD12MVP1

Abstract: RD12MVS1
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout

RD12MVP1

Abstract: RD12MVS1 mitsubishi 5218 5253 1007
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data

RD09MUP2

Abstract: 555 application note
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072 Date: 6th Feb. 2006 Prepared: M.Miyashita S.Kametani Confirmed: SUBJECT: T.Ohkawa “RD09MUP2” 400-520MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout

555 application note

Abstract: RD09MUP2 ER48
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072-A Date: 6th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: M.Miyashita S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: “RD09MUP2” 400-520MHz RF characteristics data

Contextual Info: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.

Contextual Info: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101

rd70huf2

Abstract: RD70 HUF2 MITSUBISHI RF POWER MOS FET rd70 Mitsubishi Plastics RD70HUF transistor c33
Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 4 3.61 2.40 3 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION

RD70 HUF2

Abstract: W105 TRANSISTOR ML1 RD70HUF2
Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' 0.60 2 FEATURES 3 RD70 Lot HUF2 No-G 6 9 a 4 3.61 2.40 3 2 1 6 5 RD70HUF2 13.50 Lot No-G 8 7 APPLICATION For output stage of high power amplifiers in VHF/UHF