MINIMOLD Search Results

2745T

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS //PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The //PC2745TB and //PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile

UPC2745TB

Abstract: UPC2745TB-E3 UPC2746TB UPC2746TB-E3 marking C1R NEC
Contextual Info: 3 V, SUPER MINIMOLD UPC2745TB SILICON MMIC WIDEBAND AMPLIFIER UPC2746TB FEATURES TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package GAIN vs. FREQUENCY 25 • LOW SUPPLY VOLTAGE: VCC = 1.8 to 3.3 V • HIGH ISOLATION:

2SC5007

Abstract: 2SC5010 nec 5201 3771 nec
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA840TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to

2SC5436

Abstract: 2SC5668
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA844TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5436, 2SC5668)

2SC5436

Abstract: 2SC5600 NEC 821
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

NESG3031M14

Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2710TB 5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

2SC5603

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA893TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • Built-in high gain transistor fT = 13.5 GHz TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

UPC2791TB-E3

Abstract: UPC2792TB-E3 mmic e3 UPC2791TB UPC2792TB Package Marking C2s marking C2s MMIC WIDE-BAND AMPLIFIER sot-363
Contextual Info: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2791TB UPC2792TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

2SC5675

Abstract: 2SC5675-T1 APPLICATION OF IC 7492
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5675 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package ORDERING INFORMATION

2SC5435

Abstract: 2SC5437 NEC 2505 nj
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor

2SC5435

Abstract: 2SC5786 NEC 7815
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor

2SC5436

Abstract: 2SC5786 4550 nec IC 7432 data
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor

2SC5604

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted

SOT-363* marking c1z

Contextual Info: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER UPC2763TB GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA FEATURES • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T 20 UPC2763T Gain, GS (dB)

Contextual Info: 3 V, SUPER MINIMOLD UPC2749TB 1900 MHz SI RFIC AMPLIFIER FEATURES GAIN vs. FREQUENCY AND TEMPERATURE • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 25 VCC = 3.0 V • GAIN: 16 dB TYP 20 • NOISE FIGURE: 4.0 dB TYP DESCRIPTION The UPC2749TB is a Silicon RF Integrated Circuit which is

nec 2401

Abstract: UPC3215TB
Contextual Info: 5V, SUPER MINIMOLD UPC3215TB SI MMIC WIDEBAND AMPLIFIER INSERTION POWER GAIN vs. FREQUENCY FEATURES • WIDEBAND RESPONSE: fu = 2.9 GHz TYP at 3dB bandwidth Noise Figure, NF dB 25 20 Gain, GS (dB) • NOISE FIGURE: NF = 2.3 dB TYP at f = 1.5 GHz • POWER GAIN:

2SC3356

Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
Contextual Info: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

a1270* transistor

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA892TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

KTC801U

Contextual Info: SEMICONDUCTOR KTC801U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. DIM A A1 B 1 6 2 5 3 4 A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.

transistor A1

Abstract: KTA501E
Contextual Info: SEMICONDUCTOR KTA501E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 2 DIM A 5 A1 Excellent temperature response between these 2 transistor. C A super-minimold package houses 2 transistor.

2SC5004

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA804TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)

2SC5676

Abstract: 2SC5737 MARKING VT
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA859TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5676) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

transistor m33

Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package