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    Lumberg Automation

    Lumberg Automation RST 4-679/0.5M (MIN 100 PCS

    Rst 4-679/0.5M; |Lumberg Automation RST 4-679/0.5M (MIN 100 PCS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark RST 4-679/0.5M (MIN 100 PCS Bulk 1
    • 1 $16.76
    • 10 $15.56
    • 100 $15.56
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    • 10000 $15.56
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    MIN100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: LM2903PW Linear ICs Dual Voltage Comparator status Military/High-RelN Input Bias Current Max. A 250n t(resp) (S)300n V(io) Max. (V)7.0m I(io) Max. (A)50n Com Mode Inp Range (VICR)34 Volt Gain Min100Â Strobe Inp (Y/N)No P(D) Max. (W)525m Nom. Supp (V)5.0


    Original     		lm2903pwmin100code8-17numberln00800017 PDF

    Contextual Info: LM2903M Linear ICs Dual Voltage Comparator status Military/High-RelN Input Bias Current Max. A 250n t(resp) (S)1.3u V(io) Max. (V)7.0m I(io) Max. (A)50n Com Mode Inp Range (VICR)13.5ñ Volt Gain Min100Â Strobe Inp (Y/N)No P(D) Max. (W)600m Nom. Supp (V)15ñ


    Original     		lm2903mmin100code8-17numberln00800017 PDF

    GU128X64-800B

    Abstract: GU128x64 Vacuum Fluorescent Display NORITAKE ITRON VFD MODULES 128 x 64 "Graphic Display" vfd itron 128x64 128X64 character font table connector 26pin MIN20 vfd display japan
    Contextual Info: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: GU128X64-800B Specification No: DS-1239-0000-03 Date of Issue: May 19, 2005 Revision: May 1, 2006 December 20, 2007 January 23, 2008 : : PUBLISHED BY NORITAKE ITRON CORP. / JAPAN This specification is subject to change without prior notice.


    Original     		2002/95/ecgu128x64-800bds-1239-0000-03gu128x64+8vacuum fluorescent displaynoritake itron vfd modules 128 x 64graphic displayvfd itron 128x64128x64 character font tableconnector 26pinmin20vfd display japan PDF

    KC06

    Abstract: TC58V16BFT
    Contextual Info: TOSHIBA TC58V16BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X


    OCR Scan     		tc58v16bfttc58v16264-bytekc06 PDF

    Contextual Info: 5082-2565 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandE-F Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0


    Original     		min100 PDF

    Contextual Info: 5082-2550 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)6.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5


    Original     		min100 PDF

    Contextual Info: 5082-2520 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandE-F Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0


    Original     		min100 PDF

    Contextual Info: 5082-2577 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL Test Freq2.0G Frequency Min. (Hz)1.0G Frequency Max. (Hz)3.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)5.5


    Original     		min100 PDF

    Contextual Info: 5082-2566 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandE-F Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0


    Original     		min100 PDF

    Contextual Info: 5082-2553 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5 Maximum Conversion Loss (dB)


    Original     		min100 PDF

    Contextual Info: 5082-2551 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5 Maximum Conversion Loss (dB)


    Original     		min100 PDF

    Contextual Info: 5082-2296 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandA-J Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0


    Original     		min100 PDF

    Contextual Info: 5082-2554 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5 Maximum Conversion Loss (dB)


    Original     		min100 PDF

    Contextual Info: 5082-2785 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz)1.0G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5


    Original     		min100 PDF

    GM71C4400AJ/ALJ-80

    Contextual Info: GMM7321000SG-60/70/80 1,048,576 WORDS x 32 BIT GoldStar GMM7322000SG-60/70/80 GOLDSTAR ELECTRON CO. LTD. 2,097,152 WORDS x 32 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM7321000SG is a 1M x 32 bits dynamic RAM MODULE which is assembled 8 pieces of


    OCR Scan     		gmm7321000sg-60/70/80gmm7322000sg-60/70/80gmm7321000sggmm7322000sg+4max42min100max10gm71c4400aj/alj-80 PDF

    Contextual Info: GoldStar GOLDSTAR ELECTRON CO., LTD. Description GMM7364000BS/BSG-60/70/80 4,194,304 WORDS x 36 BIT CMOS DYNAMIC RAM MODULE Features The GMM7364000BS/BSG is a 4M x36 Bits dy­ • 72 pins Single In-Line Package GMM736XXXXBS: Tin-Lead Plate namic RAM MODULE which is assembled 36


    OCR Scan     		gmm7364000bs/bsg-60/70/80gmm7364000bs/bsggmm736xxxxbsgmm736xxxxbsg+37364000bs/bsgmin100ddd3t31 PDF

    Contextual Info: 5082-2295 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandA-J Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0


    Original     		min100 PDF

    Contextual Info: 5082-2523 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0 Maximum Conversion Loss (dB)


    Original     		min100 PDF

    Contextual Info: SDM2210-011 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.1G Frequency Min. (Hz)2.0G Frequency Max. (Hz)8.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)5.5


    Original     		sdm2210-011min100 PDF

    Contextual Info: 5082-2580 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)6.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0


    Original     		min100 PDF

    Contextual Info: 5082-2297 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandA-K Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5


    Original     		min100 PDF

    Contextual Info: 5082-2511 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz)500M Frequency Max. (Hz)6.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0


    Original     		min100 PDF

    Contextual Info: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: GU128X32-800B Specification No: DS-1329-0000-01 Date of Issue: April 6, 2006 Revision: May 1, 2006 : : : : PUBLISHED BY NORITAKE ITRON CORP. / JAPAN This specification is subject to change without prior notice.


    Original     		2002/95/ecgu128x32-800bds-1329-0000-01 PDF

    kc04

    Contextual Info: TOSHIBA TC58V16BFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X


    OCR Scan     		tc58v16bfttc58v16264-bytekc04 PDF