MIL-STD-883 METHOD 2010 Search Results

Option Information

Contextual Info: Work-In-Progress Option Information www.vishay.com Vishay Siliconix MIL-PRF-38535 Class Level B Process Flow MIL-STD-883/M5004 INTERNAL VISUAL METHOD 2010 CONDITION B TEMP CYCLE METHOD 1010 CONDITION C CONSTANT ACCELERATION METHOD 2001 CONDITION E PRE-BURNIN ELECTRICAL

no-go

Contextual Info: HVCMOS IC Process Option Flows RB PRODUCT FLOW 1 (SIMILAR TO MIL-STD-883 CLASS B) RC PRODUCT FLOW COMMERICAL PRODUCT FLOW Preseal Visual Method 2010, Condition B Preseal Visual Method 2010, Condition B Temperature Cycle (2) Method 1010, Condition C, 10 Cycles, -65°C to + 150°C

method d 1071

Abstract: LTPD
Contextual Info: DMOS Process Option Flow Chart DMOS ARRAY RB FLOW 1 (SIMILAR TO MIL-STD-883 CLASS B) Preseal Visual Method 2010, Condition B Temperature Cycle Method 1010, Condition C, 10 Cycles, -65°C to +150°C 10 minutes minimum @ each temperature extreme Constant Acceleration

MSK PRODUCT COMPARISON CHART

Contextual Info: MSK PRODUCT COMPARISON CHART Test Flow or Requirement MIL-STD-883 Test Method Certification Qualification QML Listing No Element Evaluation Clean Room Processing Ultrasonic Inspection, TM 2030 Wirebond Process Control No Yes A/R Yes Hermetic Class H Yes

M1000

Abstract: M1000/SUPER5-KIT/SCC
Contextual Info: 32.0-46.0 GHz GaAs MMIC Balanced Mixer April 2005 - Rev 30-Apr-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

TEXAS 7697

Abstract: CMM1100 CMM1100-BD DM6030HK PB-CMM1100-BD-0000 TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2010 - Rev-05-Feb-10 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

M1000

Abstract: 40BRFM0058 mmic MIXER 210 84-1LMI XM1000
Contextual Info: 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

CMM1100

Abstract: CMM1100-BD PB-CMM1100-BD TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100 May 2006 - Rev 01-May-06 Features Self Bias Architecture 18.0 dB Small Signal Gain 3.5 dB Noise Figure +11.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2009 - Rev 22-Sep-09 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

CELSIUS M420

Abstract: 10358 microstrip CMM1110 CMM1110-BD M420 PB-CMM1110-BD TS3332LD MA1916
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1110 May 2006 - Rev 01-May-06 Features Self Bias Architecture 16.0 dB Small Signal Gain 2.5 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

M1000

Contextual Info: 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

M1000

Contextual Info: 32.0-46.0 GHz GaAs MMIC Balanced Mixer August 2005 - Rev 04-Aug-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

PB-CMM1100-BD-0000

Abstract: tanaka epoxy tanaka TS3332LD epoxy transistor BD 140 CMM1100-BD CMM1100-BD-000V DM6030HK TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2008 - Rev 28-Sep-08 Features Self Bias Architecture 16.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

3011-75

Abstract: B103B B110 JESD22 LMZ14203EXT lmz12003ext switching regulator 12v 3A
Contextual Info: LMZ12003EXT 3A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage for Military and Rugged Applications Easy to use 7 pin package Performance Benefits • Low radiated emissions / High radiated immunity ■ Passes vibration standard MIL-STD-883 Method 2007.2 Condition A

B103B

Abstract: B110 JESD22
Contextual Info: LMZ14202EXT 2A SIMPLE SWITCHER Power Module with 42V Maximum Input Voltage for Military and Rugged Applications Easy to use 7 pin package Performance Benefits • Low radiated emissions / High radiated immunity ■ Passes vibration standard MIL-STD-883 Method 2007.2 Condition A

30117

Abstract: B103B B110 JESD22 JESD22-B110 lmz12001ext
Contextual Info: LMZ12001EXT 1A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage for Military and Rugged Applications Easy to use 7 pin package Performance Benefits • Low radiated emissions / High radiated immunity ■ Passes vibration standard MIL-STD-883 Method 2007.2 Condition A

Contextual Info: SN74LVC14A-Q1 HEX SCHMITT-TRIGGER INVERTER www.ti.com SCAS705B – SEPTEMBER 2003 – REVISED FEBRUARY 2008 FEATURES 1 • • • • • • • • Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: LMZ14203EXT 3A SIMPLE SWITCHER Power Module with 42V Maximum Input Voltage for Military and Rugged Applications Easy to use 7 pin package Performance Benefits • Low radiated emissions / High radiated immunity ■ Passes vibration standard MIL-STD-883 Method 2007.2 Condition A

XM1003-BD

Contextual Info: 32.0-42.0 GHz GaAs MMIC Image Reject Mixer M1003-BD February 2007 - Rev 16-Feb-07 Features Sub-harmonic Image Reject Mixer GaAs HBT Technology 9.0 dB Conversion Loss 18.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

CMM1100

Abstract: CMM1100-BD CMM1100-BD-000X DM6030HK PB-CMM1100-BD TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2007 - Rev 06-Feb-07 Features Self Bias Architecture 18.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

CMM1110

Abstract: CMM1110-BD CMM1110-BD-000X DM6030HK M420 PB-CMM1110-BD TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1110-BD January 2007 - Rev 29-Jan-07 Features Self Bias Architecture 16.0 dB Small Signal Gain 2.5 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

DM6030HK

Abstract: TS3332LD XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD August 2007 - Rev 11-Aug-07 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

BD 140 transistor

Abstract: tanaka epoxy tanaka TS3332LD tanaka TS3332LD epoxy CMM1110-BD CMM1110-BD-000V DM6030HK M420 TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1110-BD May 2007 - Rev 01-May-07 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.2 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

ts333

Abstract: P1016 tanaka epoxy tanaka TS3332LD DM6030HK TS3332LD XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD August 2007 - Rev 11-Aug-07 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010