MIL-STD-883 METHOD 2001 Search Results

Option Information

Contextual Info: Work-In-Progress Option Information www.vishay.com Vishay Siliconix MIL-PRF-38535 Class Level B Process Flow MIL-STD-883/M5004 INTERNAL VISUAL METHOD 2010 CONDITION B TEMP CYCLE METHOD 1010 CONDITION C CONSTANT ACCELERATION METHOD 2001 CONDITION E PRE-BURNIN ELECTRICAL

no-go

Contextual Info: HVCMOS IC Process Option Flows RB PRODUCT FLOW 1 (SIMILAR TO MIL-STD-883 CLASS B) RC PRODUCT FLOW COMMERICAL PRODUCT FLOW Preseal Visual Method 2010, Condition B Preseal Visual Method 2010, Condition B Temperature Cycle (2) Method 1010, Condition C, 10 Cycles, -65°C to + 150°C

method d 1071

Abstract: LTPD
Contextual Info: DMOS Process Option Flow Chart DMOS ARRAY RB FLOW 1 (SIMILAR TO MIL-STD-883 CLASS B) Preseal Visual Method 2010, Condition B Temperature Cycle Method 1010, Condition C, 10 Cycles, -65°C to +150°C 10 minutes minimum @ each temperature extreme Constant Acceleration

MSK PRODUCT COMPARISON CHART

Contextual Info: MSK PRODUCT COMPARISON CHART Test Flow or Requirement MIL-STD-883 Test Method Certification Qualification QML Listing No Element Evaluation Clean Room Processing Ultrasonic Inspection, TM 2030 Wirebond Process Control No Yes A/R Yes Hermetic Class H Yes

Sharp Semiconductor Lasers

Abstract: AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics
Contextual Info: Application Note Optoelectronics Failure Analysis of Optoelectronic Devices DEFINITIONS • US Military Standard: MIL-STD-883 Method 5003 Failure Analysis Procedures for Microcircuits – Failure analysis is a post-mortem examination of a failed device employing, as required, electrical

Contextual Info: T5621, T5622, T5623, T5624 T5721, T5722, T5723, T5724 5X7 mm Surface Mount High Reliability Tristate/Non-Tristate, 16 KHz to 150MHz ELECTRICAL SPECIFICATIONS Frequency Range Fixed Output ENVIRONMENTAL SPECIFICATIONS Shock-MIL-STD 883, Method 2002, Test Condition B 1500 peak g, 0.5 ms duration, ½

Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

MO-194

Abstract: MPDS006C SN74ALVCH16646
Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

MO-194

Abstract: MPDS006C SN74ALVC14
Contextual Info: SN74ALVC14 HEX SCHMITT-TRIGGER INVERTER SCES107E – JULY 1997 – REVISED AUGUST 1999 D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

74ALVCH16952DGGG4

Abstract: 8C12 EN10 SN74ALVCH16952
Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

8C12

Abstract: EN10 MPDS006C SN74ALVCH16952
Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

74ALVCH16646DGGRE4

Abstract: 74ALVCH16646DGVRE4 74ALVCH16646DLG4 74ALVCH16646DLRG4 SN74ALVCH16646
Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

74ALVCH16952DGGRG4

Abstract: 8C12 EN10 SN74ALVCH16952
Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

74ALVCH16646DGGRE4

Abstract: 74ALVCH16646DGGRG4 74ALVCH16646DGVRE4 74ALVCH16646DGVRG4 SN74ALVCH16646
Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN74ALVCH16721 3.3-V 20-BIT FLIP-FLOP WITH 3-STATE OUTPUTS www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V