MICROWAVE TRANSISTOR 03 Search Results

MICROWAVE TRANSISTOR 03 Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
93425ADM/B	Rochester Electronics LLC	93425 - 1K X 1 TTL SRAM	PDF

MICROWAVE TRANSISTOR 03 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LX1214E500X Abstract: BD239 BY239 SC15 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LX1214E500X NPN microwave power transistor Preliminary specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Preliminary specification NPN microwave power transistor	Original	LX1214E500X SCA53 127147/00/02/pp12 LX1214E500X BD239 BY239 SC15	PDF
philips ferrite material specifications Abstract: BD239 BY239 LXE15450X SC15 mlc444 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor	Original	LXE15450X SCA53 127147/00/02/pp12 philips ferrite material specifications BD239 BY239 LXE15450X SC15 mlc444	PDF
equivalent of SL 100 NPN Transistor Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA	Original	M3D159 LLE18040X SCA63 125002/00/02/pp12 equivalent of SL 100 NPN Transistor TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR	PDF
MSA103 Abstract: BP317 PTB23003X DSA005130 SOT440A Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D031 PTB23003X NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PTB23003X FEATURES	Original	M3D031 PTB23003X OT440A SCA55 127147/00/03/pp8 MSA103 BP317 PTB23003X DSA005130 SOT440A	PDF
philips ferrite 4330-030 Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips	PDF
d 1047 transistor Abstract: PZ1418B30U Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D034 PZ1418B30U NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PZ1418B30U PINNING - SOT443A	Original	M3D034 PZ1418B30U OT443A SCA55 127147/00/03/pp12 d 1047 transistor PZ1418B30U	PDF
BLS3135-50 Abstract: BP317 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1998 Apr 06 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A	Original	M3D259 BLS3135-50 OT422A 125002/02/pp8 BLS3135-50 BP317	PDF
BFQ60 Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2 Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — - — — • » « w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal	OCR Scan	fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2	PDF
MAPRST2729-170M Abstract: 15 w RF POWER TRANSISTOR NPN VCC36 Contextual Info: MAPRST2729-170M RADAR PULSED POWER TRANSISTOR 170 Wpk, 2700 - 2900 MHz, 100 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 03/30/2005 OUTLINE DRAWING FEATURES • Designed for ATC Radar Applications • NPN Silicon Microwave Power Transistor	Original	MAPRST2729-170M MAPRST2729-170M 15 w RF POWER TRANSISTOR NPN VCC36	PDF
2SC4225 Abstract: 9015 transistor Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band.	Original	2SC4225 2SC4225 9015 transistor	PDF
MAPHST0034 Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor Contextual Info: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry	Original	MAPHST0034 29Wpk, MAPHST0034 MAPHST MAPHS VCC36 9-GHz c 129 transistor	PDF
MAPRST1214-030UF Abstract: transistor j6 transistor 20 dB 14 ghz Contextual Info: MAPRST1214-030UF RADAR PULSED POWER TRANSISTOR 30W, 1.2-1.4 GHz, 6ms Pulse Width, 25% Duty Cycle Preliminary Datasheet Revision 01/14/2003 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation	Original	MAPRST1214-030UF -30dBc MAPRST1214-030UF transistor j6 transistor 20 dB 14 ghz	PDF
transistor D 2395 Abstract: NEC 2501 re 443 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise am plifier at VHF through UHF band.	OCR Scan	2SC4225 2SC4225 transistor D 2395 NEC 2501 re 443	PDF
Transistor AND DIODE Equivalent list Abstract: Transistor Equivalent list 40j2* diode MLC436 copper permittivity diode BY239 bd239 equivalent philips ferrite 4b1 BD239 BY239 Contextual Info: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common emitter class AB.	OCR Scan	LX1214E500X OT439A. Transistor AND DIODE Equivalent list Transistor Equivalent list 40j2* diode MLC436 copper permittivity diode BY239 bd239 equivalent philips ferrite 4b1 BD239 BY239	PDF

MAGX-000035 Contextual Info: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation	Original	MAGX-000035-030000 MAGX-000035-030000 MAGX-000035	PDF
MF1011B900Y Abstract: SC15 Contextual Info: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 \|as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C	OCR Scan	MF1011B900Y MLC725 OT448A. MF1011B900Y SC15	PDF
PH2729430M Contextual Info: = .- =_ ‘E an AMP company Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz PH2729430M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry	Original	PH2729430M Vccs36 PH2729430M	PDF
MX1011B200Y Abstract: SC15 transistor list Contextual Info: Philips Semiconductors Product specification Microwave power transistor MX1011B200Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 \|as pulse width, 10% duty factor Microwave performance up to T mb = 25 °C in a common base class C	OCR Scan	MX1011B200Y 15GHz 03GHzV' MLC469 OT439A MX1011B200Y SC15 transistor list	PDF
13MM Abstract: PH3134-2OL transistor f20 PH3134 Contextual Info: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PH3134-2OL 13MM PH3134-2OL transistor f20 PH3134	PDF
PH2323-3 Abstract: NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor Contextual Info: an AMP cormany CW Power Transistor, 2.3 GHz 3.5W PH2323-3 v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package	Original	PH2323-3 PH2323-3 NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor	PDF
35 micro-X Package MARKING CODE Q Abstract: BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3 Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • • 4 3 1 2 For Medium Power Amplifiers Compression Point P -1dB =19dBm 1.8 GHz Max. Available Gain G ma = 16dB at 1.8 GHz • Hermetically sealed microwave package •	Original	BFY450 19dBm QS9000 35 micro-X Package MARKING CODE Q BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3	PDF
d marking Micro-X Abstract: BFY450 RF TRANSISTOR NPN MICRO-X Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz	Original	BFY450 19dBm 25-Line Transistor25 QS9000 d marking Micro-X BFY450 RF TRANSISTOR NPN MICRO-X	PDF
BFY181 Contextual Info: BFY181 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz	Original	BFY181 Q62702F1607 QS9000 BFY181	PDF
b 595 transistor Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE Contextual Info: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH31355M 15-j3 b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE	PDF

MICROWAVE TRANSISTOR 03 Search Results

MICROWAVE TRANSISTOR 03 Result Highlights (5)

MICROWAVE TRANSISTOR 03 Datasheets Context Search

LX1214E500X

philips ferrite material specifications

equivalent of SL 100 NPN Transistor

MSA103

philips ferrite 4330-030

d 1047 transistor

BLS3135-50

BFQ60

MAPRST2729-170M

2SC4225

MAPHST0034

MAPRST1214-030UF

transistor D 2395

Transistor AND DIODE Equivalent list

MAGX-000035

MF1011B900Y

PH2729430M

MX1011B200Y

13MM

PH2323-3

35 micro-X Package MARKING CODE Q

d marking Micro-X

BFY181

b 595 transistor