MICROWAVE TEST FIXTURE Search Results

Contextual Info: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :

201539A

Contextual Info: APPLICATION NOTE How to Test Drop-In Circulators and Isolators Introduction This Application Note describes recommended practices and guidelines for the successful testing of Skyworks drop-in circulators and isolators. Handling and Storage Precautions provides the best accuracy when RF and microwave components

jfet matching fixture

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT NMOS MODEL PARAMETERS SPICE RF Power Transistor spice AN002 ZERO Bias diode "RF MOSFETs" NMOS depletion pspice model depletion MOSFET SPICE AN001
Contextual Info: A tiIxK APPLICATION NOTE #AN001 REV 07/15/91 MICROW AVE POW ER TRANSISTOR IMPEDANCE MEASUREMENT M m /a - c o m p h i , in c . Introduction Calibration The required input and output impedances for M /A-COM PHI microwave power transistors are specified as Z if and Z of respectively. Z if is the test

Contextual Info: SDA-1000 SDA-1000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-1000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, broadband test

maam 23000-A1

Abstract: OXLEY x-band mmic lna 71200-H1 LNA x-band mmic case styles MAAM28000-A1 MAAM71200-H1 x-band lna chip
Contextual Info: Electrical Characterization of Packages for Use with GaAs MMIC Amplifiers Abstract A test methodology will be presented which combines the advantage of on-wafer RF probing with a TRL calibration to create a completely de-embeddable, novel “test fixture”

TC-5022

Abstract: thermaflo Ribbonin-122647-3ftSP HT005 AN3019 MAAPGM0076-DIE tc5022 dow corning TC-5022 MICROWAVE TEST FIXTURE MAAPGM0074-DIE
Contextual Info: Procedure for Thermal Management of Very High Power GaAs Monolithic Microwave Integrated Circuits in Fixtures 1.0 AN3019 Rev — SCOPE: This application note details instructions required for the proper thermal management of M/ACOM very High Power Amplifier die and/or packaged products in M/A-COM provided fixtures

impatt diode

Abstract: impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK
Contextual Info: IMPATT Diodes and Test Fixtures Golden contact 0.4 0.15 IMPATT Ruby box Copper Heat Sink with gold covering A • 25-155 GHz frequency range • Pulse and CW version • 20W pulse, 200 mW CW operation • Delivery from stock • Low cost A=5.6 mm, B=3.0 mm for Ka – Band

Contextual Info: SPDT 409V Latching | Pin Mount RF Characteristics s DC-3 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz 409V SPDT Latching with test fixture VSWR max Isolation dB (min) Ins. Loss dB (max) RF Power Watts (CW) DC-1 1.10 75 0.15 100 1-2 1.20 70 0.20

6647a

Abstract: uhf microwave fet 560-7A50 Logarithmic Amplifier detector 18GHz metal detector vlf 2082-2700-00 2082-2700 7082 coil gold detector decibel meter
Contextual Info: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line

HP8510

Abstract: HP8510B network analyzer operating and programming calibration definition LEMO Hewlett-Packard transistor microwave AN1041 38016 agilent ads P5668
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1041 Designing And Characterizing TRL fixture calibration standards for device modeling ABSTRACT CEL uses a variety of methods to accurately measure and characterize RF and microwave devices in support of

COBRA RF

Abstract: GaN amplifier microwave transceiver applications of vlsi in antennas mmic A pittman radar match filter design Types of Radar Antenna 1000X front-end radar
Contextual Info: THE ROAD FROM RFIC TO SOC T wenty years ago, the microwave semiconductor industry in the US and subsequently all over the world got a boost from the Defense Advanced Research Procurement Activity, DARPA’s $600 M MIMIC Microwave and Millimeter-wave Monolithic

MTR02

Contextual Info: Microwave Trimmer Capacitors This microwave trimmer range provides fast accurate fine tuning for variety of R.F and microwave appli­ cations. The variety of ten lead configurations provide for series and parallel stripline and microwave cavity applications. The MTR capacitors feature an extended

HMC322

Contextual Info: MICROWAVE CORPORATION HMC322 v00.0303 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz Typical Applications Features The HMC322 is ideal for: Broadband Performance: DC - 10.0 GHz • Telecom Infrastructure High Isolation: >38 dB@ 4 GHz • Microwave Radio & VSAT

HMC462

Abstract: HMC463 DSA003585
Contextual Info: MICROWAVE CORPORATION HMC462 v00.0703 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT

Contextual Info: Integration of Drop-In Mixers The growing popularity of drop-in m ixers is a result of the continual trend toward smaller, more reliable systems. Drop-in mixer modules are typically installed directly on a stripline or m icrostrip circuit board. Ad­ vantages of this approach to system design

HMC203

Abstract: HMC258 HMC262 HMC264 HMC265
Contextual Info: HMC262 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER 15 - 24 GHz FEBRUARY 2001 V01.05.00 Features General Description EXCELLENT NOISE FIGURE : STABLE GAIN VS TEMPERATURE: 25 dB ±1.5 dB SINGLE SUPPLY : +3V@ 36mA SMALL SIZE: 1.32 mm x 2.08 mm DIE AMPLIFIERS

C-Band Power GaAs FET HEMT Chips

Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
Contextual Info: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and

HMC143

Abstract: HMC203 HMC258 HMC264 HMC265 HMC281
Contextual Info: HMC281 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz FEBRUARY 2001 V02.0500 Features General Description EXCELLENT NOISE FIGURE: 2.5 dB The HMC281 chip is a three stage GaAs MMIC Low Noise Amplifier LNA which covers the frequency range of 18 to 32 GHz. The chip can

HMC283

Contextual Info: HMC283 MICROWAVE CORPORATION GaAs MMIC MEDIUM POWER AMPLIFIER 17 - 40 GHz V02.05.00 FEBRUARY 2001 General Description HIGH GAIN: 21 dB The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifier MPA which covers the frequency range of 17 to 40 GHz. The chip can easily be

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.

0805CG

Contextual Info: Philips Components Product specification Surface mount ceramic multilayer capacitors FEATURES • Low insertion loss/ESR up to 3 GHz: - First parallel resonance above 2 GHz - Second parallel resonance above 3 GHz Class 1, NP0 50 V microwave series Noble Metal Electrode

HMC292

Contextual Info: HMC292 v02.1202 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Typical Applications Features The HMC292 is ideal for: Input IP3: +19 dBm • Microwave Point to Point Radios LO / RF Isolation: 36 dB • LMDS Passive: No DC Bias Required

HMC259

Abstract: HMC263 HMC264 HMC265
Contextual Info: MICROWAVE CORPORATION HMC263 v02.0701 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC263 is ideal for: Excellent Noise Figure: 2.0 dB • Millimeterwave Point-to-Point Radios Gain: 22 dB • LMDS Single Supply : +3V @ 58 mA

DL1020

Abstract: J-STD-020D N5242A
Contextual Info: Mini-Circuits System In Package Wideband Gain Amplifier YSF-322+ The Big Deal: • Excellent Combination of gain, P1dB, IP3 and NF • Flat Gain Response: ± 2.2 dB over 900-3200 MHz • 50Ω Input and Output: no External Components Required CASE STYLE: DL1020