MICROWAVE SEMICONDUCTORS CORP Search Results

MICROWAVE SEMICONDUCTORS CORP Result Highlights (5)

Part	Manufacturer	Description	Download
SCC433T-K03-004	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor	PDF
MRMS791B	Murata Manufacturing Co Ltd	Magnetic Sensor	PDF
SCC433T-K03-05	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor	PDF
SCC433T-K03-PCB	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board	PDF
SCL3400-D01-004	Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer	PDF

MICROWAVE SEMICONDUCTORS CORP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
power transistors table Abstract: LBE2003S LBE2009S Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S NPN microwave power transistors Product specification Supersedes data of 1997 Mar 03 1998 Feb 16 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S FEATURES	Original	LBE2003S; LBE2009S LBE2003S LBE2009S SCA57 125108/00/03/pp16 power transistors table	PDF
equivalent of SL 100 NPN Transistor Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA	Original	M3D159 LLE18040X SCA63 125002/00/02/pp12 equivalent of SL 100 NPN Transistor TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR	PDF
philips ferrite 4b1 Abstract: 12NC philips BDT91 BY239 LLE18300X Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18300X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18300X FEATURES QUICK REFERENCE DATA	Original	M3D159 LLE18300X SCA63 125002/00/03/pp12 philips ferrite 4b1 12NC philips BDT91 BY239 LLE18300X	PDF
philips ferrite 4330-030 Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips	PDF
BP317 Abstract: RZ1214B65Y L-Band Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A	Original	M3D034 RZ1214B65Y OT443A 125002/03/pp8 BP317 RZ1214B65Y L-Band	PDF
865 RF transistor Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm	Original	SC19a OT96-1 OT502A 865 RF transistor RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A	Original	M3D034 RZ1214B65Y OT443	PDF
BLS3135-50 Abstract: BP317 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1998 Apr 06 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A	Original	M3D259 BLS3135-50 OT422A 125002/02/pp8 BLS3135-50 BP317	PDF
BLS3135-65 Abstract: MCD750 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-65 Microwave power transistor Product specification Supersedes data of 1999 May 01 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 FEATURES PINNING - SOT422A	Original	M3D259 BLS3135-65 OT422A 125002/02/pp12 BLS3135-65 MCD750	PDF
BLS3135-10 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications	Original	M3D324 BLS3135-10 OT445C 603516/01/pp12 BLS3135-10	PDF
BLS3135-20 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • Suitable for short and medium pulse applications	Original	M3D259 BLS3135-20 OT422A 603516/01/pp12 BLS3135-20	PDF
TEKELEC 297 Abstract: BD239 BY239 LXE18400X IC 3263 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D039 LXE18400X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	M3D039 LXE18400X SCA63 125002/00/02/pp12 TEKELEC 297 BD239 BY239 LXE18400X IC 3263	PDF
BLS2731-20 Abstract: RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-20 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-20 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications	Original	M3D324 BLS2731-20 OT445C SCA60 125108/00/04/pp8 BLS2731-20 RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number	PDF
BLS2731-10 Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-10 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 PINNING - SOT445C FEATURES • Suitable for short and medium pulse applications	Original	M3D324 BLS2731-10 OT445C SCA60 125108/00/04/pp12 BLS2731-10 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ	PDF

LBE2003S Abstract: LBE2009S LCE2009S SC15 Contextual Info: DISCRETE SEMICONDUCTORS LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer	OCR Scan	LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S SC15	PDF
JS9P04-AS Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P04-AS FEATURES: •HIGH POWER P1dB=26. OdBm @ f = 38GHz ■CHIP FORM BHIGH GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point	OCR Scan	JS9P04-AS 38GHz 38GHz JS9P04-AS	PDF
JS9P05-AS Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •HIG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB	OCR Scan	JS9P05-AS 28dBm 38GHz JS9P05-AS	PDF
Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB	OCR Scan	28dBm JS9P05-AS 38GHz	PDF
Contextual Info: MICROWAVE POWER G aAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P04-AS FEATURES: •H IG H POWER P1dB= 26. OdBm ■C H IP FORM IH IG H GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point	OCR Scan	38GHz JS9P04-AS	PDF
A1203 Abstract: JS9P10-AS Contextual Info: MICROWAVE POWER GaÀs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P10-AS FEATURES: •H IG H IHIGH GAIN pow er P1dB = 24.0 dBm G1dB = 9.5 dB @ f = 28 GHz f = 28 GHz ■C H IP FORM RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB	OCR Scan	JS9P10-AS A1203 JS9P10-AS	PDF
Contextual Info: MICROWAVE POWER GaÀs FET TOSHIBA MICROWAVE SEMICONDUCTORS JS9P03-AS TECHNICAL DATA FEATURES: •H IG H POWER P1dB= 23. OdBm @ f = 38GHz ■C H IP FORM B H IG H GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB	OCR Scan	38GHz JS9P03-AS 38GHz 150mA	PDF
Contextual Info: MICROWAVE POWER GaÀs FET TOSHIBA MICROWAVE SEMICONDUCTORS JS9P03-AS TECHNICAL DATA FEATURES: •H IG H POWER P1dB= 23. OdBm @ f = 38GHz ■C H IP FORM B H IG H GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB	OCR Scan	38GHz JS9P03-AS 38GHz 150mA	PDF
Contextual Info: MICROWAVE POWER GaÀs FET TOSHIBA MICROWAVE SEMICONDUCTORS JS9P03-AS TECHNICAL DATA FEATURES: •H IG H POWER P1dB= 23. OdBm @ f = 38GHz ■C H IP FORM B H IG H GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB	OCR Scan	JS9P03-AS 38GHz 150mA	PDF
JS9P04-AS Contextual Info: MICROWAVE POWER G aAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA FE A TU R E S : •H IG H POWER P1dB= 26. OdBm ■C H IP FORM JS9P04-AS IHIGH GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point	OCR Scan	JS9P04-AS 38GHz JS9P04-AS	PDF

MICROWAVE SEMICONDUCTORS CORP Search Results

MICROWAVE SEMICONDUCTORS CORP Result Highlights (5)

MICROWAVE SEMICONDUCTORS CORP Datasheets Context Search

power transistors table

equivalent of SL 100 NPN Transistor

philips ferrite 4b1

philips ferrite 4330-030

BP317

865 RF transistor

BLS3135-50

BLS3135-65

BLS3135-10

BLS3135-20

TEKELEC 297

BLS2731-20

BLS2731-10

LBE2003S

JS9P04-AS

JS9P05-AS

A1203

JS9P04-AS