MICROWAVE OVEN FAST RECOVERY DIODE Search Results

microwave cooking circuit diagram

Abstract: STGW38IH120D GW38IH120D
Contextual Info: STGW38IH120D 30 A - 1200 V - very fast IGBT Preliminary Data Features • Low saturation voltage ■ High current capability ■ Low switching loss ■ Very soft ultra fast recovery antiparallel diode Applications 2 3 1 ■ Induction cooking, microwave oven

GW38IH120D

Abstract: STGW38IH120D
Contextual Info: STGW38IH120D 30 A - 1200 V - very fast IGBT Preliminary Data Features • Low saturation voltage ■ High current capability ■ Low switching loss ■ Very soft ultra fast recovery antiparallel diode Applications 2 3 1 ■ Induction cooking, microwave oven

microwave cooking circuit diagram

Abstract: GW33IH120D STGW33IH120D
Contextual Info: STGW33IH120D 30 A - 1200 V - very fast IGBT Features • Low saturation voltage ■ High current capability ■ Low switching loss ■ Very soft ultra fast recovery antiparallel diode Applications 2 3 1 ■ Induction cooking, microwave oven ■ Soft switching application

diodes

Abstract: Schottky Barrier Diodes rectifier
Contextual Info: 5 Diodes 5-1. Rectifier Diodes 5-2. Fast Recovery Rectifier Diodes 5-3. Ultra-Fast Recovery Rectifier Diodes 5-4. Damper Diodes 5-5. Schottky Barrier Diodes 5-6. Avalanche Diodes 5-7. Power Zener Diodes 5-8. Silicon Varistors 5-9. High Voltage Rectifier Diodes

IN5342B

Abstract: diodes IN4001 IN4736A IN4448 IN4933-7 IN5921-58B IN914A-B GT60-005-10 UF160-005-06 RGP10A.M
Contextual Info: TABLE OF CONTENTS GENERAL PURPOSE RECTIFIERS . FAST RECOVERY RECTIFIERS . ULTRA FAST RECOVERY RECTIFIERS .

microwave oven fast recovery diode

Abstract: FR02-60 recovery diode FV5M-08 FV5M-06 R6000 Photo Flash Rectifiers rectifier diode piv ESJA53-12 diode PIV 2000 R100M
Contextual Info: LEADED THRU-HOLE : High Voltage Fast Recovery & Short Protection Rectifiers FAST RECOVERY HIGH VOLTAGE (PHOTO FLASH) RECTIFIER Operating Temperature -55°C to +135°C RF Cross Max. Avg. Peak Max Fwd Max Fwd Max Reverse Outline Part Number Reference Forward Inverse Surge

FV5M-06

Abstract: FV5M-08 DIODE F10 HVR062 FR02-60 R350 FR02-25 fr05-15 FSD210H FV5M-05
Contextual Info: LEADED THRU-HOLE : High Voltage Fast Recovery & Short Protection Rectifiers FAST RECOVERY HIGH VOLTAGE (PHOTO FLASH) RECTIFIER Operating Temperature -55°C to +135°C Cross Max. Avg. Peak Max Fwd Max Fwd Max Reverse Outline Part Number Reference Forward Inverse Surge

FV5M-06

Abstract: fv5m-20 microwave oven fast recovery diode FR05-20 HVR062 FR02-25 ESJA53-20 FR02-35 FR02-40 R2500F
Contextual Info: LEADED THRU-HOLE : High Voltage Fast Recovery & Short Protection Rectifiers FAST RECOVERY HIGH VOLTAGE (PHOTO FLASH) RECTIFIER Operating Temperature -55°C to +135°C Cross Max. Avg. Peak Max Fwd Max Fwd Max Reverse Outline Part Number Reference Forward Inverse Surge

CTU1S

Abstract: CTB-34 CTU-G3DR Sanken SH shv02
Contextual Info: SANKEN ELECTRIC U S A H E High Voltage Diodes D I 7 IVrm: 2—24kV ? m DDDDiaS Bio : 2mA/350mA r - 0 3 - Ì 5 T-02-0 SHV/HVR Absolute Maximum Ratings Rating/ Characteristics V rsm V rm lo If s m Tc kV (kV) (mA) (A) CC) SHV-02 Vf (V) 60HZ- Half Sine Wave

FGH40N60UFD

Abstract: FGH40N60 fgh40n60ufdtu 1000 kw microwave inverter
Contextual Info: FGH40N60UFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild ’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications

FGH40N60SFD

Abstract: FGH40N60SFDTU FGH40N60 IGBT welder circuit Circuit of welder IGBT inverter
Contextual Info: FGH40N60SFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild ’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications

Contextual Info: FGH40N60SFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications

Contextual Info: FGH40N60UFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

Contextual Info: FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: VCE sat , typ = 2.0 V @ IC = 25 A and TC = 25C Using Fairchild's proprietary trench design and advanced NPT

FGA15N20

Contextual Info: FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer superior conduction and switching

FGA15N120

Abstract: microwave oven fast recovery diode IGBT 200A 1200V application induction heating
Contextual Info: FGA15N120ANTD tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 1.9V @ IC = 15A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT

Contextual Info: FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: VCE sat , typ = 2.0 V @ IC = 25 A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT

FGA25N120ANTD

Abstract: FGA25N120 IGBT FGA25N120ANTD FGA25N120ANT FGA25N120ANTD-F109
Contextual Info: FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: VCE sat , typ = 2.0 V  @ IC = 25 A and TC = 25C Using Fairchild 's proprietary trench design and advanced NPT

Contextual Info: 600 V, TBD A, IGBT FGD633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-3PF-3L  VCE - 600 V  IC-TBD A TC = 100 °C

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

ee1616

Abstract: lnk564pn HIGH VOLTAGE DIODE for microwave ovens microwave oven transformer diode sb2100 equivalent EE1616_ diode FR107 equivalent EE-16-16 EE16 fr107 equivalent
Contextual Info: DI-178 Design Idea LinkSwitch-LP 2.4 W, Low Cost, High Efficiency Linear Replacement Power Supply Application Device Power Output Input Voltage Output Voltage Topology Microwave Oven LNK564PN 2.4 W 90 – 265 VAC 12 V Flyback Design Highlights • Low cost, low component count, compact, lightweight linear

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

igbt 1000v 10A

Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche