MICROWAVE GAAS SCHOTTKY DIODE MIXER Search Results

60GHz mixer

Abstract: Schottky Barrier Diode KBM-N56 Microwave GaAs schottky Diode mixer KBM-N56-2 60Ghz harmonic mixer schottky diode circuit symbol 60GHz transistor KBM-N56-1 Microwave schottky Diode mixer
Contextual Info: Schottky Barrier Diode GaAs KBM-N56-2 DIMENSIONS (Unit : um) KBM-N56-2 is a GaAs flip chip anti-parallel pair Schottky diode designed for use as harmonic mixer element at microwave and millimeterwave frequencies. Their high cut-off frequency insures good performance

KBM-N56-1

Abstract: 30GHz diode 60GHz mixer 60Ghz 60GHz transistor schottky diode circuit symbol
Contextual Info: Schottky Barrier Diode GaAs KBM-N56-1 DIMENSIONS (Unit : um) KBM-N56-1 is a GaAs flip chip Schottky diode which is designed for use as mixer and detector elements at microwave and millimeterwave frequencies. The flip chip configuration is suitable for pick and place insertion.

nitride

Abstract: KBM-N56-1
Contextual Info: NEW PRODUCT GaAs Flip Chip Schottky Diodes KBM-N56-1 Description This KBM-N56-1 is a GaAs flip chip Schottky diode which is designed for use as mixer and detector elements at microwave and millimeter wave frequencies. The diode are fully passivated with silicon nitride for

CHM1193

Abstract: k-band gaas schottky diode
Contextual Info: CHM1193 K-Band Mixer GaAs Monolithic Microwave IC Description The CHM1193 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the Schottky diode process : 1 µm Schottky

Contextual Info: CHM2179a W-band Mixer GaAs Monolithic Microwave IC Description LO RF The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via

CHM1190

Abstract: CHM1191
Contextual Info: CHM1191 K Band Mixer GaAs Monolithic Microwave IC Description The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode

Contextual Info: P ^pi GEC PLESSEY DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave

KT 804

Abstract: kt 803 SBL-121 SBL-221 SBL-801 KT 802 EN3056
Contextual Info: Ordering number:EN3056 SBL Series Beam Lead Type GaAs Schottky Barrier Diode C to Millimeter Band Mixer, Detector, Modulator Applications Features Package Dimensions • Facilitates easy mounting on MIC Microwave IC . · Less parastic components, conversion loss.

Contextual Info: united monolithic semiconductors * °JV\‘V •* ^ c. $ , C \ * % V * CHM1192 ^ K- Band Mixer GaAs Monolithic Microwave IC Description The CHM1192 is a balanced Schottky diode mixer based on a six-quarter wave ring structure. It could be use in receiver or

HMC350MS8

Abstract: 2.2 GHz local oscillator
Contextual Info: HMC350MS8 MICROWAVE CORPORATION HIGH IP3 SINGLE-BALANCED MIXER 0.6 - 1.2 GHz FEBRUARY 2001 V00.1200 Features General Description CONVERSION LOSS: 7.5 dB The HMC350MS8 is a miniature single balanced mixer in an 8 lead plastic surface mount package. The passive GaAs schottky diode mixer

HMC351S8

Contextual Info: HMC351S8 MICROWAVE CORPORATION HIGH IP3 DOUBLE-BALANCED MIXER 0.7 - 1.1 GHz FEBRUARY 2001 V00.1200 Features General Description CONVERSION LOSS: 9.5 dB The HMC351S8 is a double balanced mixer in an 8 lead plastic surface mount package. The passive GaAs schottky diode mixer implements

HMC316MS8

Contextual Info: HMC316MS8 MICROWAVE CORPORATION HIGH IP3 DOUBLE-BALANCED MIXER 1.5 - 3.5 GHz FEBRUARY 2001 V00.1200 Features General Description Conversion Loss: 8 dB The HMC316MS8 is a miniature double balanced mixer in an 8 lead plastic surface mount package. The passive GaAs schottky diode

Contextual Info: • 37bô5E2 D016455 TOS « P L S B Si GEC PLE S S EY SEMICONDUCTORS DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave

lO37

Abstract: CHM1193
Contextual Info: CHM1192 K- Band Mixer GaAs Monolithic Microwave IC Description LO IF RF -2 Conversion gain dB The CHM1192 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the

MGF3000

Abstract: MGF-3000
Contextual Info: TÏ DE I t.HM'ìflS'ì 0010073, 3 | ~ MITSUBISHI SEMICONDUCTOR <GaAs FET> 6249829 MITSUBISHI D I S C R E T E SC DESCRIPTION herm etically D T.07-07 FOR MICROWAVE LOW-NOISE MIXERS SCHOTTKY BARRIER DIODE OUTLINE DRAWING The M G F 3 0 0 0 is designed fo r use in S- to Ku-band mixers.

Contextual Info: u n ite d * „ m o n o lith ic sem ico n d u cto rs « »A " : / nU m h h n n CHMl 190 «9V K Band Mixer . GaAs Monolithic Microwave IC t Description The CHM1190 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or

Contextual Info: u n ited m o n o lith ic sem ico n du ctors « » *„ : nuM H H n-i C H M l 191 r K Band Mixer . GaAs Monolithic Microwave IC t Description The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or

Gunn Diode

Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Contextual Info: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER

Contextual Info: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features Low-Noise Performance High Cut-off Frequency Passivated to Enhance Reliability Packaged Diodes and Bondable Chips Applications Single and Balanced Mixers and Detectors Transceivers X, K and Ka Bands

k and ka band radar detector

Abstract: MS8000 MS8004 MS8001-P10 noise diode Microwave schottky Diode mixer RF Microwave schottky Diode mixer MS8001 m38 schottky MS8002
Contextual Info: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors

MS8001

Abstract: m38 schottky
Contextual Info: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors

pin diode gamma detector

Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
Contextual Info: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6

SURFACE MOUNT DIODES MIL GRADE

Abstract: Schottky diode Die flip chip high frequency mixer APN3001 BRO373-09A DMK2308-000 DMK2790-000 PN junction diode in mil grade RF Microwave schottky Diode mixer adaptive cruise control radar
Contextual Info: Applications • PCN mixers and circuits, or detectors in low power, fast switching point-to-point millimeterwave radios, collision avoidance automotive radars, adaptive cruise control radar systems, etc. Features • Designed for highvolume designs • High frequency

Signal Path Designer

Abstract: PIN diode switch 3a "pin diode" DS025 DS0602
Contextual Info: SELECTING THE RIGHT RF SWITCH Ed Blair, Kalyan Farrington and Kelvin Tubbs Daico Industries, Inc. Rancho Dominguez, CA After the system design has been blocked out, after the individual component specifications to achieve the overall system’s performance have been identified, the crucial moment arrives.actual components selection! Amplifiers, filters, mixers and