MICRON Q-FLASH MEMORY Search Results

MT29F64G08AFAAAWP

Abstract: MT29F64G08 MT29F64G08AFAAA MT29F64G08A MT29F64G
Contextual Info: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 64Gb Fall: Micron Family: NAND Flash Generation (l>rimary : First Generation 110 : Common 110 Channels: 1

N25Q256A

Abstract: N25Q256A13E N25Q256a13 marking mlp8 N25Q
Contextual Info: 3V, 256Mb: Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A Features • • • • • • • • • • • • • • • • • Write protection – Software write protection applicable to every

T28F200

Abstract: t994 MT28F200 MARKING flash 28F 28f200
Contextual Info: ADVANCE MT28F200 128K x 16, 256K x 8 FLASH MEMORY M IC R O N 128K x 16, 256K x 8 I 5V/12V, BOOT BLOCK 5/12 VOLT FLASH MEMORY FLASH MEMORY FEATURES • Five erase blocks: - 16KB/8K-word boot block (protected - Two 8KB/4K-word parameter blocks - One 96KB/48K-word memory block

Contextual Info: PRELIMINARY 2 MEG, BIOS-OPTIMIZED, BOOT BLOCK FLASH MEMORY MICRON I QUANTUM DEVICES, INC. FLASH MEMORY MT28F200C1 MT28F002C1 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks (96KB and 128KB)

Contextual Info: ADVANCE m i c r o 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY n FLASH MEMORY MT28F800B3 FEATURES PIN ASSIGNMENT Top View • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • 3V-only, dual-supply operation:

MT28F004VG

Contextual Info: PRELIMINARY MICRON MT28F004 512K x 8 FLASH MEMORY 512K x 8 I 5V/12V, BOOT BLOCK BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES • S even e rase blocks: 16KB b o o t block protected T w o 8KB p a ra m e te r blocks F o u r m a in m e m o ry blocks • 5V ±10% Vcc; 12V ±5% Vpp

Contextual Info: PRELIMINARY FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F002B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40°C to +85°C for Vcc = 3V to 3.6V -25°C to +85°C for Vcc = 2.7V to 3.6V

Contextual Info: ADVANCE Quan tum d e v ic e s , in c . FLASH MEMORY 256K x 8 FEATURES • Five erase blocks: - 16KB boot block protected -Two 8KB parameter blocks -One 96KB memory block - One 128KB memory block • Low power: 100|j.A standby; 60mA active, M A X • 5V±10% read; 12V±5% write/erase

marking code 2t7

Contextual Info: ADVANCE MT28F800B1 512K x 16,1 MEG x 8 FLASH MEMORY MICRON I QUANTUM DEVICES, MC. FLASH MEMORY 512K x 16,1 MEG x 8 S mart FEATURES oltage 44 3 R P* A ïs C 2 43 3 W E * At 7 C 3 42 □ AS A7 C 4 41 ] A9 A6 C S 40 ] A10 AS C 6 39 3 A 11 A4 C 7 38 3 A 12 A3 C 8

Contextual Info: ADVANCE MT28F800S2/MT28F008S2 512K x 16,1 MEG x 8 FLASH MEMORY MICRON I QUANTUM DEVICES, MC. FLASH MEMORY 8 MEG SmartVoltage SVT-II , SECTORED ERASE FEATURES • • • • Sixteen 64KB/(32K-word) erase blocks Programmable sector protect Deep Power-Down Mode: 10|iA MAX

Contextual Info: ADVANCE I^ IC R D N 1 MEG x 8 EVEN-SECTORED FLASH MEMORY FLASH MEMORY « ™8S3 3V Only, Dual Supply • • • • PIN ASSIGNMENT Top View Sixteen 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 1Q(J,A MAX 3V-only, dual-supply operation:

Contextual Info: PRELIMINARY MT28F004B1 512K x 8 FLASH MEMORY MICRON U QUANTUM DEVICES, INC. FLASH MEMORY 512K x 8 S m a r tV o lta g e , BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks

Contextual Info: PRELIMINARY M IC R O N 1 MT28F400 256K x 16, 512K x 8 FLASH MEMORY FLASH MEMORY 256K x 16, 512K x 8 FEATURES • Seven erase blocks: - 16KB/8K-word boot block protected - Two 8KB/4K-word parameter blocks - Four main memory blocks • 5V ±10% Vcc; 12V ±5% V pp

Contextual Info: ADVANCE MT28SF161 MTZBSF161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY MICRON I FLASH MEMORY 1 m eg x 16,2 MEGx8 3V FEATURES • • • • PIN ASSIGNMENT Top View Thirty-two 64KB/(32K-word) erase blocks Programmable sector lock Deep Power-Down Mode: 5(iA M A X

80 pin simm flash 32mb

Contextual Info: ADVANCE 2MB-32MB FLASH SIMM |V|IC=RON 80-PIN FLASH SIMM FLASH MODULE • JEDEC- and industry-standard pinout in an 80-pin single in-line memory module SIMM • 2MB (512K x 32), 4MB (1 Meg x 32), 8MB (2 Meg x 32), 16MB (4 Meg x 32), 32MB (8 Meg x 32) • Address access times:

Contextual Info: ADVANCE FLASH MEMORY MT28F800A3 FEATURES PIN ASSIGNMENT Top View 48-Pin TSOP Type I • Twenty-three erase blocks: Two 4K-word boot blocks (protected) Six 4K-word parameter blocks Fifteen 32K-word main memory blocks • Smart 3 voltage flexibility: 2.7V to 3.6V Vcc

Contextual Info: ADVANCE FLASH MEMORY 1 MEG x 8 AND 3 V S m a rtV o lta g e , BOOT BLOCK FEATURES • Eleven erase blocks: 16KB boot block protected Two 8KB parameter blocks Eight main memory blocks • Deep Power-Down Mode: 5pA MAX • 3V SmartVoltage* Technology (SVT) (MT28SF008

MT28F160S3RG-10

Contextual Info: PRELIMINARY 2 MEG x 8/1 MEG x 16 SMART 3 EVEN-SECTORED FLASH FLASH MEMORY MT28F160S3 FEATURES PIN ASSIGNMENT Top View • x8/x16 organization • Thirty-two 64KB erase blocks • VCC and VPP voltages: 3V–3.6V VCC operation, 75ns (MIN) access time 2.7V–3.6V VCC operation, 100ns (MIN)

MT28F002

Abstract: SR50
Contextual Info: PRELIMINARY MICRON 1 MT28F002 256K x 8 FLASH MEMORY -• - 256K x 8 I FLASH MEMORY FEATURES • Five erase blocks: 16K B bo o t b lo ck protected T w o 8K B p a ra m eter b lo ck s T w o m ain m em o ry b locks • 5V ±10% V c c; 12V ±5% V pp • A d d ress access tim es: 60n s, 80ns, 100ns

Contextual Info: ADVANCE M IC R O N 1 MT28SF200 128K x 16, 256K x 8 FLASH MEMORY FLASH MEMORY 128K x 16,256K x 8 — FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|_iA at 5V Vcc; 2|iA at

Contextual Info: PRELIMINARY MT28F400 256K x 16, 512K x 8 FLASH MEMORY |U 1I C = R C 3N FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View • Sev en erase blocks: - 1 6 K B /8 K -w o rd b oo t b lo ck (p rotected ) - T w o 8 K B /4 K -w o rd p aram eter b lo ck s

Contextual Info: ADVANCE MT28 S F116 2 MEG x 8 FLASH MEMORY I^ IIC R O N 2 MEG x 8 5V/5V AND 3 V S m a r t V o l t a g e , SECTORED ERASE FEATURES • • • • • • • • • Thirty-two 64KB erase blocks Programmable sector lock Deep Power-Down Mode: 5p.A MAX 5V/5V operation (MT28F116 only):

Contextual Info: ADVANCE MT28F160S2 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16,2 MEG x 8 FLASH MEMORY S m a rtV o lta g e S V T -II , SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB/(32K-word) erase blocks Programmable sector protect

Contextual Info: ADVANCE MT28F161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16, 2 MEG x 8 5V/5V SECTORED ERASE FEATURES PIN ASSIGNMENT Top View • Thirty-two 64KB/(32K-word) erase blocks • Programmable sector lock • Deep Power-Down Mode: 5|lA MAX • 5V ±10% V cc and Vpp