MT28F004 Search Results

Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

Contextual Info: PRELIMINARY FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F002B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40°C to +85°C for Vcc = 3V to 3.6V -25°C to +85°C for Vcc = 2.7V to 3.6V

MT28F400B1

Abstract: MAX714
Contextual Info: PRELIMINARY |M |^ E S m V I MT28F004B1/MT28F400B1 ET 4 MEG FLASH MEMORY I FLASH MEMORY 4 MEG S m artV o ltag e, BOOT BLOCK, EXTENDED TEMPERATURE FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40° to +85° C • Seven erase blocks:

Contextual Info: OBSOLETE EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F004B1 VET, MT28F008B1 VET FLASH MEMORY Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 40-Pin TSOP Type I (C-2) • Extended temperature range operation:

Contextual Info: PRELIMINARY MT28F004B1 512K x 8 FLASH MEMORY FLASH MEMORY 512K x 8 SMARTVOLTAGE, BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks • Deep Power-Down Mode: 8µA at 5V VCC; 8µA at

Contextual Info: PRELIMINARY MT28F004 512K x 8 FLASH MEMORY |U |C = R O N FLASH MEMORY 512K x 8 FEATURES • Seven erase blocks: 16KB boot block protected Two 8KB param eter blocks Four m ain m em ory blocks • 5V ±10% Vcc; 12V ±5% V pp • A ddress access tim es: 60ns, 80ns, 100ns

TOP SIDE MARKING OF MICRON

Abstract: 48-PIN MT28F004B3 MT28F400B3
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):

MT28F400B1

Abstract: MAX714
Contextual Info: PRELIMINARY MT28F004B1/MT28F400B1 ET 4 MEG FLASH MEMORY I^ IIC R O N FLASH MEMORY 4 MEG EXTENDED TEMPERATURE FEATURES PIN ASSIGNMENT Top View • Extended tem perature range operation: -40° to +85° C • Seven erase blocks: 16KB/8K-word boot block (protected)

MT28F004B5

Abstract: MT28F400B5
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5):

Contextual Info: PRELIMINARY EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY MICRON I QUANTUM DEVICES, INC. FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F002B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES • Extended temperature range operation:

MT28F004B3

Abstract: MT28F400B3 MT28F400B3SG-10TET
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

Micron Quantum Devices

Abstract: MARKING flash 28F
Contextual Info: ADVANCE MT28F004 512K X 8 FLASH MEMORY FLASH MEMORY 512K x 8 FEATURES • Seven erase blocks: - 16KB boot block protected - Two 8KB parameter blocks - Four general memory blocks • Low power: lOOuA standby; 60mA active, MAX • 5V±10% read; 12V±5% w rite/erase

Contextual Info: P R EL IM IN A R Y EXTENDED TEMPERATURE B O O T B L O C K F L ASH M E M O R Y MICRON I QUANTUMDevices, INC. MT28F400B1 VET, MT28F800B1 VET, MT28F004B1 VET, MT28F008B1 VET FLASH MEMORY L o w Voltage, Extended Tem perature FEATURES PIN ASSIGNMENT Top View

Contextual Info: 512K x 8 BOOT BLOCK FLASH MEMORY MT28F004B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks • SmartVoltage Technology (SVT): 3.3V ±0.3V or 5V ±10% VCC

MT28F004B3

Abstract: MT28F400B3
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 Features • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):

marking code SM CM

Contextual Info: PRELIM IN ARY MT28F004B1 512K x 8 FLASH M EM ORY |V |IC = R O N FLASH MEMORY 512K x 8 FEATURES PIN A SSIG N M EN T Top View • Seven erase blocks: 16KB boot block (protected) Tw o 8KB param eter blocks Four m ain m emory blocks • Deep Pow er-Down Mode: 8(iA at 5V V cc; 8|iA at

MT28F400B5WG-8T

Abstract: MT28F400B5SG-8TET MT28F004B5VG-8B
Contextual Info: PRELIMINARY‡ 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

Contextual Info: EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F004B1 VET, MT28F008B1 VET FLASH MEMORY Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 40-Pin TSOP Type I (C-2) • Extended temperature range operation:

Contextual Info: M lC B D N ' 1 P I A Q U I r L M O r l EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY M P M H P V IV lC IV IV y n I MT28F400B1 VET, MT28F800B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended tem perature range operation:

Contextual Info: PRELIMINARY M IC R O N * 1 P I A Q H r L M O r l EXTENDED t e m p e r a t u r e BOOT BLOCK FLASH MEMORY M F M H R V IV IC IV I^ n I MT28F400B1 VET, MT28F800B1 v e t , MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View

MT28F400B5SP

Abstract: MT28F400B5WP-8 T MT28F400B5SG-8BET MT28F400B5SP8 MT28F400B5WP 44-PIN MT28F004B5 MT28F400B5 MT28F400B5WP-8
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5):

48-PIN

Abstract: MT28F004B5 MT28F400B5
Contextual Info: PRELIMINARY‡ 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

48-PIN

Abstract: MT28F004B3 MT28F400B3
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):

MT28F004B5

Contextual Info: 512K x 8 SMART 5 BOOT BLOCK FLASH MEMORY MT28F004B5 FLASH MEMORY 5V Only, Dual Supply Smart 5 FEATURES PIN ASSIGNMENT (Top View) • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks • Smart 5 technology (B5):