MICRON MT2 CMOS Search Results

Micron MT2 cmos

Abstract: 51240 jeida dram 88 pin DU35 Micron MT2
Contextual Info: M T24D 88C51240 512K x 40. 1 MEG x 20 IC DRAM CARD |V llC = R O N IC DRAM CARD 2 MEGABYTES 512K x 40, 1 MEG x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) • JEIDA, JEDEC and PCMCIA standard 88-pin IC DRAM card • Polarized receptacle connector • Industry standard DRAM functions and timing

T2D 53

Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
Contextual Info: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by

Contextual Info: ADVANCE MICRON I MT24LD T 472(S) 4 MEG X 72 DRAM MODULE SEMICONDUCTOR MC. 4 MEG x 72 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-performance CMOS silicon-gate process

Contextual Info: M ir -r a r n iS J I ^ MT2D T 132 e, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 DRAM MODULES 1,2, 4 MEG X 32 DRAM MODULE 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES OPTIONS PIN ASSIGNMENT (Front View) 72-Pin SIMM (DD-11) (DD-9) (DD-8) (DD-3) MARKING • Timing 52ns access; 15ns cycle

MT8D432-8

Contextual Info: M IC R O N 1 MT2D T 132 B, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 DRAM MODULES DRAM MODULE 1,2, 4 MEG 32 X 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES OPTIONS PIN ASSIGNMENT (Front View) 72-Pin SIMM (D D -11) 1 M eg x 32 T S O P version (D D -9) (D D -8) (D D -3)

Contextual Info: ;JBl 8, ' 'X? ADVANCE MT26C1600V HKCCMOUCTOn *- OTPROM 2 Meg x 8,1 Meg x 16 OTPROM 3.3V Operation FEATURES • Fast access times: 120ns, 150ns, 200ns • Selectable organizations: 2,097,152 x 8 or 1,048,576 x 16 • Industry-standard pinouts • Single power supply: 3.3V±10%

Contextual Info: ADVANCE MT28F800S2/MT28F008S2 V 512K x 16,1 MEG x 8 FLASH MEMORY FLASH MEMORY 8 MEG SVT-II , LOW POWER, SECTORED ERASE S m a r tV o lta g e FEATURES • • • • Sixteen 64KB/(32K-word) erase blocks Programmable sector protect Deep Power-Down Mode: 10(iA MAX

5 PEN PC TECHNOLOGY advance

Contextual Info: ADVANCE MT2D T 132 B, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 BURST EDO DRAM MODULES M IC R O N I rECMNOLOGV NC.- 1, 2, 4 MEG [BURST EDO IDRAM MODULE X 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-line memory modu e (SIM M ) • Burst EDO order, interleave or linea •, programmer by

tp181

Abstract: toshiba hdd schematic board cbf 493 TP223 mt2 tEac CBF 423 diode ba39 toshiba 1,8 hdd schematic board TP182 keyboard and touchpad schematic
Contextual Info: 4-148 KBC3_SUSPWR 1% R11 10K 1% R18 6.65K P1.5V_AUX VDC C20 10nF TP192 TP193 R7 TP? 2.5V AL C6 330uF 7 6 5 TP194 Q57 SI4816DY IHLP-2525CZ-01 L1 4.7uH 25V C14 4700nF 3 8 2 D1 4 G2 1 G1 TP217 TP216 R1 1K TP196 25V C15 220nF TP191 5% TP190 R17 6.8K 1% R15 330K

Contextual Info: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by

MICRON POWER RESISTOR 24W

Contextual Info: ADVANCE MICRON ft M T24D T J472(S 4 MEG x 72 DRAM MODULE SElMCONOUCTQft MC 4 MEG X 72 DRAM DRAM MODULE 5.0V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Components SOJ TSOP D DT • Packages

T28F200

Abstract: t994 MT28F200 MARKING flash 28F 28f200
Contextual Info: ADVANCE MT28F200 128K x 16, 256K x 8 FLASH MEMORY M IC R O N 128K x 16, 256K x 8 I 5V/12V, BOOT BLOCK 5/12 VOLT FLASH MEMORY FLASH MEMORY FEATURES • Five erase blocks: - 16KB/8K-word boot block (protected - Two 8KB/4K-word parameter blocks - One 96KB/48K-word memory block

Contextual Info: ADVANCE I QUANTUM DEVICES INC FLASH MEMORY 256K x 16,512K x 8 FEATURES • Seven erase blocks: - 16KB/8K-word boot block protected - Two 8KB / 4K-word parameter blocks - Four general memory blocks • Low power 100(iA standby; 60mA active, MAX • 5V±10% read; 12V±5% write/erase

MT28F002B1VG-8 B

Contextual Info: PRELIMINARY MT28F002B1 256K x 8 FLASH MEMORY MICRON U QUANTUM DEVtCEft, INC. FLASH MEMORY 256K x 8 S m artV o ltag e, FEATURES • Five erase blocks: 16KB boot block protected Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8(aA at 5V Vcc; 8|xA at

Contextual Info: ADVANCE M IC R O N 1 MT28SF200 128K x 16, 256K x 8 FLASH MEMORY FLASH MEMORY 128K x 16,256K x 8 — FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|_iA at 5V Vcc; 2|iA at

TIC48

Contextual Info: ADVANCE F L A S H M E M O R Y 5 1 2 K x 1 6 , 1 E G x 8 BOOT BLOCK 3 V S m a r t V o lt a g e , FEATURES M PIN ASSIGNMENT Top View • E le v e n e r a s e b lo c k s : 1 6 K B / 8 K - w o r d b o o t b lo c k (p r o te c te d ) 44-Pin SOP (FA-1) T w o 8 K B / 4 K - w o r d p a r a m e te r b lo c k s

transistor marking code 12W SOT-23

Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

28f200-bB

Abstract: mt2f2 28F200-T L99 marking T199S
Contextual Info: PRELIMINARY M IC R O MT28F200 128K x 16, 256K x 8 FLASH MEMORY N 128K x 16, 256K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View • Five erase blocks: 16K B /8 K -w o rd bo o t b lo ck (protected) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s T w o m ain m em o ry b lo ck s

Contextual Info: ADVANCE M T28SF400 256K x 16, 512K x 8 FLA S H M EM ORY MICRON 256K x 16, 512K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View 44-Pin SOP • Sev en erase b locks: 1 6 K B /8 K -w o rd b o o t b lo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s

Micron Quantum Devices

Contextual Info: ADVANCE MT28SF200 128K x 16, 256K x 8 FLASH MEMORY M IC R O N 128K x 16, 256K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View • Fiv e era se blocks: 1 6 K B /8 K -w o rd bo o t b lo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m eter b lo ck s T w o m ain m em o ry b lo ck s

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

mosfet triggering circuit USING TL494

Abstract: controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D
Contextual Info: SG388/D Rev. 3, May-2001 Master Components Selector Guide PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.