MICRON 4MB NOR FLASH Search Results

Contextual Info: 75MHz, Serial Peripheral Interface Flash Memory Features Micron Serial NOR Flash Memory 3V, 4Mb Page Erasable with Byte Alterability M45PE40 Features • • • • • • • • • • • • SPI bus-compatible serial interface 75 MHz clock frequency MAX

Contextual Info: 75MHz, Serial Peripheral Interface Flash Memory Features Micron Serial NOR Flash Memory 3V, 4Mb Page Erasable with Byte Alterability M45PE40 Features • • • • • • • • • • • • SPI bus-compatible serial interface 75 MHz clock frequency MAX

Contextual Info: 75MHz, Serial Peripheral Interface Flash Memory Features Micron Serial NOR Flash Memory 3V, 4Mb Page Erasable with Byte Alterability M45PE40 Features • • • • • • • • • • • • SPI bus-compatible serial interface 75 MHz clock frequency MAX

MT28F004B3

Abstract: MT28F400B3 MT28F400B3SG-10TET
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

TOP SIDE MARKING OF MICRON

Abstract: 48-PIN MT28F004B3 MT28F400B3
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):

Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

TAA370

Abstract: MT28F004B5 MT28F400B5 MT28F400B5WG-6B
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

MT28F400B5WG-8T

Abstract: MT28F400B5SG-8TET MT28F004B5VG-8B
Contextual Info: PRELIMINARY‡ 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

48-PIN

Abstract: MT28F004B5 MT28F400B5
Contextual Info: PRELIMINARY‡ 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

48-PIN

Abstract: MT28F004B3 MT28F400B3
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):

MT28F004B5

Abstract: MT28F400B5 Micron 4Mb NOR FLASH MT28F400B5SG-8B
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.3µm Process Technology FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks

MT28F004B5

Abstract: MT28F400B5 TAA370
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

MT28F004B5

Abstract: MT28F400B5
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5):

MT28F400B5SP

Abstract: MT28F400B5WP-8 T MT28F400B5SG-8BET MT28F400B5SP8 MT28F400B5WP 44-PIN MT28F004B5 MT28F400B5 MT28F400B5WP-8
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5):

09005aef8114a789

Abstract: MT28F004B3 MT28F400B3
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 Features • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):

mediatek

Abstract: qualcomm qsc Qualcomm, QSC locosto mediatek applications Vfbga Philips sram 256k 54 ball vfbga mediatek mt block diagram of qualcomm
Contextual Info: Micron Product Information CellularRAM® PSRAM Memory An Ideal, Drop-In Replacement for SRAM 5 Reasons to Switch to CellularRAM Memory Backward Compatibility The same voltage range, package options, and ball assignments as standard SRAM make CellularRAM memory an easy

transistor SMD wl3

Abstract: making code WL3 Micron 32MB NOR FLASH making WL3 PSRAM A191 A192 CY62147DV18 K6F1616R6C SRAM 4T cell
Contextual Info: TN-45-30: PSRAM 101 Introduction Technical Note PSRAM 101: An Introduction to Micron CellularRAM® and PSRAM Introduction The mobile phone market has become increasingly cost competitive, demanding interface innovations to support the low-cost requirements inherent in this market. Micron®

mlp8 Package

Abstract: Micron 4Mb NOR FLASH m25p40.pdf - Rev. B
Contextual Info: M25P40 Serial Flash Embedded Memory Features M25P40 3V 4Mb Serial Flash Embedded Memory Features • Electronic signature – JEDEC-standard 2-byte signature 2013h – Unique ID code (UID) with 16-byte read-only space, available upon request – RES command, one-byte signature (12h) for

TSOP40

Abstract: M29W004 M29W400 QR120
Contextual Info: QUALIFICATION REPORT M29W004 T6-U20: 4Mb 512K x 8 SINGLE SUPPLY FLASH MEMORY in TSOP40 INTRODUCTION The M29W004 is a 4Mb Low Voltage Single Supply (2.7-3.6V) Flash memory organized as 512K bytes of 8 bits each. It is offered in TSOP40 package. It can be programmed and erased in-system or in standard

M25P application note

Contextual Info: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory 4Mb, 3V Features • Electronic signature – JEDEC-standard 2-byte signature 2013h – Unique ID code (UID) with 16-byte read-only space, available upon request

Micron 4Mb NOR FLASH

Contextual Info: M25PE40 Serial Flash Memory Features M25PE40 4Mb 3V NOR Serial Flash Memory Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard Pinout Features • • • • • • • • • • • • • • 4Mb of page-erasable Flash memory 2.7V to 3.6V single supply voltage

CDIP32

Abstract: M28F411 QR123 endurance test report CDIP32 package
Contextual Info: QUALIFICATION REPORT M28F411 T6-U20: 4 Mb x8 FLASH MEMORY in TSOP40, CATANIA M5 DIFFUSION LINE INTRODUCTION The M28F411 is a 4Mb Dual Supply (5/12V) Boot Block Flash memory organised as 512K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.6 micron T6-U20 (-20% upgrade) process which

6T SRAM

Abstract: SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram
Contextual Info: TN-45-17: CellularRAM Replacing Single- and Dual-CE# SRAM Introduction Technical Note Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM Introduction Micron CellularRAM™ devices are designed to be backward-compatible with 6T SRAM