MICRO-X CERAMIC Search Results

ARBO

Abstract: UDS protocols DIP17 80X86 Micro Channel for active high tie outputs low 65RD priority arbitration system microchannel mca bus controller
Contextual Info: P L X TECHNOLOGY CORP 32E 1> • bflSSlM6! OOODIOÔ 2 « P L X 7-52'33-SS Micro Channel MCA 1200/1210 Micro Channel Controller and Local Arbiter Distinctive Features General Description, • Single chip device performs Micro Channel control and local arbitration

CM1718

Abstract: 1210 LCC ARBO UDS protocols microchannel
Contextual Info: P L X TECHNOLOGY CORP bassm6! 0000100 a « p l x 32E 1> T-sî'33-ss Micro Channel_ MCA 1200/1210 Micro Channel Controller and Local Arbiter Distinctive Features General Description, • Single chip device performs Micro Channel control and local arbitration

SH67P54

Contextual Info: SH67P54 OTP 4-Bit Micro-controller with LCD Driver Features „ SH6610D-Based Single-Chip 4-Bit Micro-controller „ OTPROM: 4K X 16 bits „ RAM: 384 X 4bits - System Register: 48 X 4 bits - Data RAM: 336 X 4 bits „ Operation Voltage: System Oscillator = 300kHz - 4MHz, VDD = 2.4V - 6.0V

Contextual Info: SH67K90 24K 4-bit Micro-Controller with LCD Driver Feature SH6610D-Based Single-Chip 4-bit Micro-Controller ROM: 24K X 16 bits RAM: 5784 X 4 bits - 48 bytes System Control Register - 5536 bytes Data Memory - 200 bytes LCD RAM Operation Voltage: 2.4V - 3.6V

Contextual Info: SH66P51 OTP 2K 4-bit Micro-controller with LCD Driver Features „ SH6610C-based single-chip 4-bit micro-controller „ OTP ROM: 2K X 16 bits „ RAM: 128 X 4 bits Data RAM „ Operation voltage: 1.8V - 3.6V (Typically 3.0V) „ 18 CMOS bi-directional I/O pins

Contextual Info: ADV MICRO MEMORY MfiE » • DS5752Ô GGBOflG11) Ô ■ AMD4 m i * A m Advanced Micro Devices 9 9 C 1 0 A 256 X 48 Content Addressable Memory DISTINCTIVE CHARACTERISTICS ■ 256word x 48-bit Content Addressable Memory (CAM) ■ - Optimized for Address Decoding in Local Area

Contextual Info: SH67P33C OTP 1K 4-bit Micro-controller Features „ SH6610C-Based Single-Chip 4-bit Micro-Controller „ ROM: 1K X 16 bits „ RAM: 80 X 4 bits - 32 System Control Register - 48 Data memory „ Operation Voltage: 1.8V - 3.6V Typically 3.0V „ 16 CMOS Bi-directional I/O pins and 1 CMOS input pin

Contextual Info: Surface Mount Ceramic Pkg. FMXMC12S SERIES Micro 2 x 1.2 / Ultra Thin Microprocessor Crystals 32.768 kHz CERAMIC SMD 2x1.2 Tight Stability SPECIFICATIONS Issue 1 - 05222012 2 x 1.2 CERAMIC SMD Parameter Specification Frequency Load Capacitance CL Frequency Tolerance

FMXMC12S

Abstract: crystals
Contextual Info: FMXMC12S SERIES Surface Mount Ceramic Pkg. Micro 2 x 1.2 / Ultra Thin Microprocessor Crystals 32.768 kHz CERAMIC SMD 2x1.2 Tight Stability SPECIFICATIONS Issue 1 - 05222012 2 x 1.2 CERAMIC SMD Parameter Specification Frequency Load Capacitance CL Frequency Tolerance

Contextual Info: ADV MICRO b4E MEMORY D • G2S752Ö DOBElìb 574 ■ in Advanced Micro Devices Am27X020 2 Megabit (262,144 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ±10% power supply tolerance ■ High noise immunity ■ Low power dissipation

ABM7

Contextual Info: CERAMIC SMD MICRO MINIATURE MICROPROCESSOR CRYSTAL ABM7 RoHS Pb in Glass exempt per RoHS 2002/95/EC Annex (5 6.0 x 3.5 x 1.4mm Compliant | | | | | | | | | | | | | FEATURES: APPLICATIONS: • Superior heat-resistant glass sealing • Low in height (1.4 mm max.)

AMD a 462 socket pinout

Contextual Info: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption

AMD am3 socket pinout

Abstract: amd socket am3 pinout amd pinout diagram socket AM3 AMD socket AM3 diagram AMD socket AM3 pin diagram AMD am3 socket pinout VOLTAGE amd am3 pin out amd am3 pinout diagram PLJI amd am3 socket pin diagram
Contextual Info: ADV MICRO MEMORY ° b4E D • 0SS75SÖ OOBITÖB 2fib ■ AMD4 a Advanced Micro Devices Am27C020 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ 100% Flashrite programming ■ Fast access time — Typical programming time of 32 seconds

28F010

Abstract: AM28F010 AMD 478 socket pinout
Contextual Info: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption

VA17

Abstract: 32-pln Am27C020
Contextual Info: ADV MICRO 14E 0 | MEMORY 0257520 0027430 h | T ^ i o - \ 3> -Z P \ AdvaAce Information Am27C020 Advanced 2 MBit 256K x 8 ' CMOS EPROM ' . , Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance C M O S technology • Compact 32-pln DIP package requires no hardware

Contextual Info: AD V MICRO MEMORY 4ÖE i> Ü2575SÔ DGaObSfi H T -4 6 -1 3 -2 5 Am27X2048 2 Megabit (131,072 x 16-Bit) CMOS ExpressROM Device 4 Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed

AM27CO10

Abstract: AM27C010-120DC AM27C010 gg2mt
Contextual Info: ADV MICRO MEMORY 14E 0 1 Q5S?5Eâ 0Ü27M07 t | Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMO,S EPROM DISTINCTIVE CHARACTERISTICS Compact 32-pin DIP package requires no hardware change for upgrades to 8 megabits Easy upgrade from 28-pin JEDEC EPROMs

Contextual Info: ADV MICRO MEMORY IAMD4 02S752Ö 0 0 3 0 5 7 4 4ÔE » ' 1-46-13-25 Am27X256 Advanced Micro Devices 32,768 X S-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed

WF009504

Contextual Info: DV MICRO I 14E MEMORY D I 0557520 DG57425 5 $ Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • ’• • • • • First EPROM offering 16 inputs and outputs Fast access time — 100 ns Low power consumption:

FMXMC16S

Abstract: crystals
Contextual Info: FMXMC16S SERIES Surface Mount Ceramic Pkg. Micro 2 x 1.6 / Ultra Thin Microprocessor Crystals High Reliability CERAMIC SMD 2x1.6 Tight Stability SPECIFICATIONS Issue 3 - 08142012 Parameter Specification Frequency Range Operation Mode Load Capacitance CL

Contextual Info: ADV MICRO MEMORY T> m b4E 02S752Ö D Q 3 2 2 1 4 31T • AMD4 a Advanced Micro Devices Am27X040 4 Megabit (524,288 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ±10% power supply tolerance ■ As an OTP EPROM alternative: ■ High noise immunity

FMXMC20S

Abstract: crystals
Contextual Info: FMXMC20S SERIES Surface Mount Ceramic Pkg. Micro 2.5 x 2.0 / Ultra Thin Microprocessor Crystals High Reliability CERAMIC SMD 2.5x2.0 Tight Stability SPECIFICATIONS Issue 2 - 07252012 Parameter Specification Frequency Range Operation Mode Load Capacitance CL

Contextual Info: ADV MICRO MEMORY bME J> • 025752Û 0032000 554 ■ AMDM ZI Advanced Micro Devices Am27C040 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 100 ns ■ Low power consumption — Typical programming time of 1 minute

Contextual Info: 3ÛE D • Q2S752Ô GGETSSH 7 *AM»4 ADV MICRO MEMORY ■ «M iaiÉ isi T -4 6 -1 3 -2 ? Am27C100 7 1 Advanced Micro Devices 1Megabit (131,072 x 8-Bit) ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ ■ ■ High speed Flashrlte programming