MH1RT QML Search Results

Contextual Info: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

4110L

Abstract: ATMEL 622 MH1RT QML A101 A201 MH1099E MH1156E MH1242E MH1332E
Contextual Info: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

tristate buffer

Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
Contextual Info: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to

ATMEL 634

Abstract: ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E
Contextual Info: Features • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

A101

Abstract: A201 MH1099E MH1156E MH1242E MH1332E AMI 1108
Contextual Info: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

A101

Abstract: A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard
Contextual Info: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

Transistor Equivalent list po55

Abstract: Structure of D flip-flop DFFSR tristate buffer sis 968 PO-44Z PRU11 AC/DC drive nec 78054 PO22 tristate buffer cmos
Contextual Info: Features • High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.198 M Used Gates and 512 Pads with 3.3 V, 3V and 2.5V libraries when tested to space quality grades • Up to 1.6M Used Gates and 596 Pads with 3.3 V, 3V and 2.5V libraries when tested to

smd 472

Abstract: DSAE005560 5962-01B01 MH1RT QML TH1242S MG2044 MG2044E MG2091E MG2194E TH115
Contextual Info: Aerospace Product Line Preferred ASIC Packages for Aerospace Product Line July 2002 Aerospace Packaging July 2002 1 Aerospace Product Line ® Rules Composite arrays have to use pad frames of existing standard matrices from the relevant ASIC series. QML flows available only for the packages listed in the SMD’s,

A101

Abstract: A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard
Contextual Info: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

qml-38535

Abstract: smd code MH1
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add case outline Y. - phn 08-11-04 Thomas M. Hess B Removed “ground lid” note for case outline X in section 1.2.4 and in figure 1. phn 09-01-14 Charles F. Saffle REV SHEET REV SHEET REV A A A SHEET 15

ta 8268

Abstract: qml-38535 4090 F 01B01 marking code 33916 MH1242ER smd code MH1
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 09 – 32 and appendix A. - phn 02-02-11 Thomas M. Hess B Add Case outline U and T. Editorial changes throughout. - phn 03-06-03 Thomas M. Hess C Change maximum supply voltage range from 3.6 V to 4.0 V and from 5.5 V to

Contextual Info: REVISIONS LTR DATE YR-MO-DA APPROVED A Add case outline Y. - phn DESCRIPTION 08-11-04 Thomas M. Hess B Removed “ground lid” note for case outline X in section 1.2.4 and in figure 1. phn 09-01-14 Charles F. Saffle C Add case outline Z. - phn 10-07-12

5962-01B01

Abstract: perfo 124 373 01B01 vhdl code 4794 qml-38535 3629 BP 4090 Datasheet ci 4009 5962-01B0115V9A 5962-01B0111V
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-02-11 Thoma M. Hess Add device type 09 – 32 and appendix A. - phn REV A SHEET 55 REV A A A A A A A A A A A A A A A A A A A A SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 REV A A

smd 5962-08b01

Abstract: F7400 5962-08B0101QXC 5962-08b0110vxc TH125 qml-38535 TH1M156ER TH133 5962-08b0110qxc 5962-08B0110VX
Contextual Info: REVISIONS LTR DATE YR-MO-DA APPROVED A Add case outline Y. - phn DESCRIPTION 08-11-04 Thomas M. Hess B Removed “ground lid” note for case outline X in section 1.2.4 and in figure 1. phn 09-01-14 Charles F. Saffle C Add case outline Z. - phn 10-07-12

atmel 946

Abstract: atmel 946 8 pin MH1RT QML military mcm 1553 0.6 um cmos process atmel 27 Series
Contextual Info: 200 ASICs for Aerospace i n t e g r a t i o n s o l u t i o n s System Level Integration for the space market R aerospace S y s t e m Meeting communication satellite challenges tmel Wireless & Microcontollers A the way for System Level Integration. hardened VLSI products for space

Contextual Info: M65609E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65609E is a very low power CMOS static RAM organized as 131072 x 8 bits. TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or

65609E

Abstract: M65609E
Contextual Info: M65609E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65609E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel Wireless & Microcontrollers brings the solution to applications where fast computing is as mandatory as

SMDJ-65609EV-40SV

Abstract: M65609E MMDJ-65609EV-40 MMDJ-65609EV-40-E MMDJ-65609EV-40MQ
Contextual Info: Features • Operating voltage: 3.3V • Access time: 40ns • Very low power consumption • • • • • • • • – active: 180mW Max – standby: 70µW (Typ) Wide temperature Range: -55°C to +125°C 400 Mils width package TTL compatible inputs and outputs

TM1014

Abstract: TM1015 TM2020 escc TM2001 20600 TM2010 ATC18RHA TM1008 TM1010
Contextual Info: 1. Introduction Design and manufacturing facilities meet international quality standards. For Space, Avionic and Military Projects, production screenings and qualification are compliant either with ESCC 9000 or MIL-PRF-38535. Atmel is fully DSCC QML qualified for level Q military and V (space), effective

AT7910E

Abstract: SpaceWire AT7910
Contextual Info: AT7910E SpW-10X SpaceWire Router DATASHEET Features SpaceWire Router Logical to Physical addressing translation Priority Management Header Deletion Capability Eight Bidirectional SpaceWire links Full duplex communication Data rate from 2 up to 200 Mbit/s in each direction

Contextual Info: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs

5962-0250101QXC

Abstract: 5962-0250101VXC M65609E MMDJ-65609EV-40 MMDJ-65609EV-40-E TM1019
Contextual Info: Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • • – Active: 180 mW Max – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Package TTL Compatible Inputs and Outputs

Atmel 544

Abstract: atmel 504 atmel 404 MQFPT352 MLGA625 725m 5962-06B02 atmel h 404 MH1242E 404D
Contextual Info: Features • • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells Up to 6.5 usable Mgates equivalent NAND2 Operating voltage 1.8V for core and 3.3V or 2.5V for I/O’s Memory Cells Compiled or synthesized to the Requirements of the Design

TM2001

Abstract: TM1010 TM2020 TM1014 TM101 4288C TM1008 TM2010 ATC18RHA TM2018
Contextual Info: 1. Introduction Atmel facilities are certified according to the ISO9001 and ISO/TS 16949 international quality standards. ISO9001/ ISO/TS 16949 standards covers quality system from the design development of product through manufacturing and service. For Space, Avionic and Military Projects, production screenings and qualification are