65609E Search Results

65609E

Contextual Info: Pages 1 to 22 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS, 128K X 8-BIT, ASYNCHRONOUS STATIC RANDOM ACCESS MEMORY WITH THREE STATE OUTPUTS BASED ON TYPE 65609E ESCC Detail Specification No. 9301/053 Issue 1 October 2007 Document Custodian: European Space Agency - see https://escies.org

T61162E

Abstract: T61162E40AMN TM1019 Enplas 64 pin
Contextual Info: Features • • • • • • • • • • • Organized as 2M x 8 bits Single 3.3V power supply Stacks of 16 SRAM 128K x 8 65609E Access Time: 40 ns Very low power consumption: – Active: 100mW Typ – Standby: 1mW (Typ) TTL compatible inputs and outputs

SMDJ-65609EV-40SV

Abstract: M65609E MMDJ-65609EV-40 MMDJ-65609EV-40-E MMDJ-65609EV-40MQ
Contextual Info: Features • Operating voltage: 3.3V • Access time: 40ns • Very low power consumption • • • • • • • • – active: 180mW Max – standby: 70µW (Typ) Wide temperature Range: -55°C to +125°C 400 Mils width package TTL compatible inputs and outputs

AT697E

Abstract: TM1019 atmel 022 67025E AT17LV010 AT60142F AT28C010-12DK 65608E 4172F-AERO-06 ATMEL 350
Contextual Info: Aerospace Products Radiation Test Result Summary Table 1. Memories, ASIC and FPGA Products Total Dose TM1019.5 Functional Parametric Latch-up 25°C SEU LET Threshold Cross Section VCC Max VCC Min /Bit Device Type Format/Function/ Speed Part Number (Krads)

AT65609E

Abstract: 65609E Enplas OTS AT61162E AT61162E-PM40M-E AT61162E-PM40MMN bs 3535 Enplas 61162E
Contextual Info: Features • • • • • • • • • • • Organized as 2M x 8 bits Single 3.3V Power Supply Stacks of 16 SRAM 128K x 65609E Die Access Time: 40 ns read, 35 ns write Very Low Power Consumption – Active: 130 mW Typ – Standby: 1 mW (Typ) TTL-Compatible Inputs and Outputs

Contextual Info: 65609E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The 65609E is a very low power CMOS static RAM organized as 131072 x 8 bits. TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or

5962R0250101VXC

Abstract: 5962-0250101VXC 5962-0250101QXC M65609E MMDJ-65609EV-40 MMDJ-65609EV-40-E
Contextual Info: Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • • – Active: 180 mW Max – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Package TTL Compatible Inputs and Outputs

radiation tolerant DSP Atmel

Abstract: 4172A CMOS OR Gates TM1019 80C32E 67025E TSC21020F 65608E
Contextual Info: Aerospace Products Radiation Test Result Summary Total Dose TM1019.5 Functional Device Type Format/Function/Speed Parametric Part-number (Krads) (Krads) Latch-up 25°C SEU LET Threshold Cross Section Vcc max. Vcc min. /Bit Typical Iccsb (mA) (MeV/mg/cm2) (MeV/mg/cm2)

5962r0250101vxc

Abstract: 5962-0250101QXC 5962-0250101VXC M65609E MMDJ-65609EV-40 MMDJ-65609EV-40-E TM1019
Contextual Info: Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • • – Active: 180 mW Max – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Package TTL Compatible Inputs and Outputs

4172G-AERO-06

Abstract: ATMEL 350 65609E TM1019 atmel 022 67025E AT17LV010 AT60142F 65608E CROSS ATMEL
Contextual Info: Aerospace Products Radiation Test Result Summary Table 1. Memories, ASIC and FPGA Products Total Dose TM1019.5 Functional Parametric Latch-up 25°C SEU LET Threshold Cross Section VCC Max VCC Min /Bit Device Type Format/Function/ Speed Part Number (Krads)

4158D

Abstract: 4158D-AERO-06 SMDJ
Contextual Info: Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • – Active: 180 mW Max – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Package TTL Compatible Inputs and Outputs

5962r0250101vxc

Abstract: 5962-0250101QXC 5962-0250101VXC M65609E MMDJ-65609EV-40-E 4158H
Contextual Info: Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • – Active: 160 mW Max – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C MFP 32 leads 400 Mils Width Package TTL Compatible Inputs and Outputs

65609E

Abstract: M65609E
Contextual Info: 65609E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The 65609E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel Wireless & Microcontrollers brings the solution to applications where fast computing is as mandatory as

Contextual Info: Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • – Active: 180 mW Max – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C MFP 32 leads 400 Mils Width Package TTL Compatible Inputs and Outputs

Contextual Info: Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • – Active: 160 mW Max – Standby: 70 µW (Typ) Wide Temperature Range: -55⋅°C to +125⋅°C MFP 32 leads 400 Mils Width Package

MH1RT

Abstract: 65609E AT56K sn17
Contextual Info: MH1RT QualPack Qualification Package MH1RT Sea of Gates Radiation Tolerant 0.35 µm CMOS MH1RT Sea of Gates 0.35 µm CMOS for Space Environment QualPack Rev.2 – Jan. 2002 1 MH1RT QualPack 1. Table of Contents 1. Table of Contents . 2

CMOS OR Gates

Abstract: TM1019 65609E AT40KEL Radiation Tolerant DSP processor 67025E AT60142 65608E
Contextual Info: Aerospace Products Radiation Test Result Summary Table 1. Memories, ASIC and FPGA Products Total Dose TM1019.5 Functional Parametric Latch-up 25°C SEU LET Threshold Cross Section V CC Max VCC Min /Bit Part Number (Krads) (Krads) Typical ICCSB (mA) (MeV/mg/c

9819

Abstract: TSC21020F application note 80C32E 67025E 81F64842B dsp radiation TM1019 TSC21020F TSC695E 65608E
Contextual Info: Aerospace Products Radiation Test Result Summary Total Dose TM1019.5 Functional Device Type 1 Format / Function / Speed Parametric Latch-up 25°C SEU LET Threshold Cross Section Vcc max. Vcc min. /Bit Part-number (Krads) (Krads) Typical Iccsb (mA) (MeV/mg/c

Enplas drawings

Abstract: AT61162E AT61162E-PM40M-E AT61162E-PM40MMN
Contextual Info: Features • • • • • • • • • • • Organized as 2M x 8 bits Single 3.3V Power Supply Stacks of 16 SRAM 128K x 65609E Die Access Time: 40 ns Very Low Power Consumption – Active: 100 mW Typ – Standby: 1 mW (Typ) TTL-Compatible Inputs and Outputs

Contextual Info: Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • • – Active: 180 mW Max – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Package TTL Compatible Inputs and Outputs

bs 3535

Abstract: AT61162E AT61162E-PM40M-E AT61162E-PM40MMN TM1019 atmel 71
Contextual Info: Features • • • • • • • • • • • Organized as 2M x 8 bits Single 3.3V Power Supply Stacks of 16 SRAM 128K x 65609E Die Access Time: 40 ns Very Low Power Consumption – Active: 100 mW Typ – Standby: 1 mW (Typ) TTL-Compatible Inputs and Outputs

5962-0250101QXC

Abstract: 5962-0250101VXC M65609E MMDJ-65609EV-40 MMDJ-65609EV-40-E TM1019
Contextual Info: Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • • – Active: 180 mW Max – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Package TTL Compatible Inputs and Outputs