MGFC47A7785 Search Results
MGFC47A7785 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MGFC47A7785 |
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7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET | Original | 197.82KB | 2 |
MGFC47A7785 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
50W 4 GHz linear power amplifier
Abstract: GF53 "GaAs FET" GAAS FET AMPLIFIER f 10Mhz to 2 GHz High Power GaAs FET MITSUBISHI ELECTRIC SEMICONDUCTOR MGFC47A7785
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mgfc47a7785168ma35dbm10mhz+7 | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FETs MGFC47A7785 7 .7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC47A7785 device is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 7.7 ~ 8.5GHz |
OCR Scan |
mgfc47a778547dbm25deg168ma | |
MGFC47A7785
Abstract: GF53
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mgfc47a7785168ma35dbm10mhz+1 | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC47A7785 7.7 – 8.5 GHz BAND / 47W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 |
Original |
mgfc47a7785 | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC47A7785 7.7 – 8.5 GHz BAND / 47W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 |
Original |
mgfc47a7785 |