MGFC42V5867 Search Results
MGFC42V5867 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MGFC42V5867 |
|
5.8~6.75GHZ BAND 16W INTERNALLHY MATCHED GaAs FET | Original | 254.32KB | 3 |
MGFC42V5867 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MGFC42V5867Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8~6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package |
OCR Scan |
MGFC42V5867 75GHz MGFC42V5867 GF-18 25deg | |
MGFC42V5867Contextual Info: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8 ~ 6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 |
Original |
June/2004 MGFC42V5867 75GHz MGFC42V5867 |