MGFC41V3642 Search Results

MGFC41V3642 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFC41V3642		Mitsubishi	3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET	Original	PDF	223.03KB	2
MGFC41V3642		Mitsubishi	3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET	Scan	PDF	91.3KB	2

MGFC41V3642 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GAAS FET AMPLIFIER f 10Mhz to 2 GHz Abstract: MGFC41V3642 36f36 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+ /-0.3 R1.25 (1) 0.6+ /-0.15 2M IN The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2	Original	MGFC41V3642 MGFC41V3642 50ohm Item-51] 30dBm Item-51 10MHz GAAS FET AMPLIFIER f 10Mhz to 2 GHz 36f36	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC41V3642 3.6 – 4.2 GHz BAND / 14W OUTLINE DRAWING DESCRIPTION The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC41V3642 MGFC41V3642 -45dBc 30dBm	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC41V3642 3.6 – 4.2 GHz BAND / 14W OUTLINE DRAWING DESCRIPTION The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC41V3642 MGFC41V3642 50ohm	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC41V3642 MGFC41V3642 50ohm Item-51] 30dBm Item-51 10MHz June/2004	PDF
MGFC41V3642 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2	Original	MGFC41V3642 MGFC41V3642 50ohm Item-51] 30dBm Item-51 10MHz	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF