MGFC39V5867 Search Results

MGFC39V5867 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFC39V5867		Mitsubishi		Scan	PDF	96.83KB	2

MGFC39V5867 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGFC39V5867 Contextual Info: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5867 5.8 ~ 6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004	Original	June/2004 MGFC39V5867 75GHz MGFC39V5867	PDF
MGFC39V5867 Abstract: 68 0063 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5867 5.8~6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC39V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package	OCR Scan	MGFC39V5867 75GHz MGFC39V5867 39dBm RG-50 Ta-25deg 68 0063	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC39V5867 5.8 – 6.75 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC39V5867 MGFC39V5867 75GHz 50ohm	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC39V5864 5.8 – 6.75 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC39V5864 MGFC39V5867 75GHz 50ohm	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC39V5867 5.8 – 6.75 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC39V5867 MGFC39V5867 75GHz	PDF