MGFC38V5867 Search Results

MGFC38V5867 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFC38V5867		Mitsubishi	5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET	Original	PDF	257.71KB	3
MGFC38V5867		Mitsubishi		Scan	PDF	100.55KB	2

Catalog Datasheet	Type	Document Tags	PDF
s18a Abstract: MGFC38V5867 675g Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5867 5.8~6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC38V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package	OCR Scan	MGFC38V5867 75GHz MGFC38V5867 38dBm 25deg s18a 675g	PDF
MGFC38V5867 Contextual Info: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5867 5.8 ~ 6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004	Original	June/2004 MGFC38V5867 75GHz MGFC38V5867	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC38V5867 MGFC38V5867 75GHz	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC38V5867 MGFC38V5867 75GHz 100ohm	PDF