MGF4957A Search Results

MGF4957A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGF4957A		Mitsubishi	super-low noise HEMT (High Electron Mobility Transistor)	Original	PDF	136.87KB	5

MGF4957A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
InGaAs HEMT mitsubishi Abstract: transistor P7d MGF4957A Fet P7d Contextual Info: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4957A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4957A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.	Original	June/2004 MGF4957A MGF4957A 12GHz 3000ps, InGaAs HEMT mitsubishi transistor P7d Fet P7d	PDF

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InGaAs HEMT mitsubishi

Abstract: transistor P7d MGF4957A Fet P7d
Contextual Info: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4957A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4957A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.

Original

June/2004 MGF4957A MGF4957A 12GHz 3000ps, InGaAs HEMT mitsubishi transistor P7d Fet P7d

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