MG200Q2 Search Results

Z1506

Abstract: Toshiba MG200Q2YS40
Contextual Info: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage

MG20002YS40

Contextual Info: MG200Q2YS40 U n i t in m m HIGH P O W E R SW ITC H IN G APPLICATIO N S. M O T O R C O N T R O L APPLICATIO N S. • H igh I n p u t Im pedance • High Speed 4 P a st - on T ub #110 tf = 0 .5 /< s Max. t r r = 0.G/<s(Max.) • Low S a t u r a t i o n V o lta g e

Toshiba MG200Q2YS40

Abstract: LT-15V MG200Q2YS40 YS40 OHS03 JE transistor
Contextual Info: TOSHIBA MG200Q2YS40 M G 2 0 0 Q 2 YS4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4 -F ast-on Tab #110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)

Contextual Info: MG200Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 200 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA

toshiba MG200Q2YS50

Abstract: MG200Q2YS50
Contextual Info: TO SHIBA MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2 YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode

Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

mg200q2ys11

Abstract: MG200Q2YS1
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG200Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications 3-M 5 Motor Control Applications Features • High input impedance • High speed: tf = 1 .Ojas Max. • Low saturation voltage:

MG200Q2YS60A

Contextual Info: MG200Q2YS60A MITSUBISHI IGBT Module MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

transistor IR 652 P

Contextual Info: TO SH IBA M G200Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG200Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H igh Speed : tf= 0.3/is M ax. @Inductive Load Low Saturation Voltage

K643

Abstract: mg200q2 Toshiba MG200Q2YS40 GE647
Contextual Info: TO SH IBA MG200Q2YS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGEST MG200Q2YS40 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • 4 - Fast -on Tab #110 High Input Impedance H ig h sp eed tf=0.5/<s Max.

transistor JSW

Abstract: toshiba srf
Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

TC58DVG14B1FT00

Abstract: TH58DVG24B1FT00 Ethernet-MAC ic TH58DVG TMP86P203P 721A SOP8 721A TMP86P202P 20-DIP pwm igbt
Contextual Info: ご注意 本資料に掲載されております製品※の一部に2004 年 10 月 1 日付けで三菱 電機株式会社へ譲渡された製品があります。詳しくは弊社営業窓口までお問 い合わせ下さい。 ※対象製品：大容量モジュール事業 自動車用途、高耐圧製品を除く

MG15J6ES40

Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Contextual Info: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

MG50Q6ES41

Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
Contextual Info: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750

MG50Q6es41

Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
Contextual Info: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series

MG200J2YS21

Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
Contextual Info: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9

MG150N2YS40

Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
Contextual Info: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11

mg500q1us1

Abstract: MG100J2YS50 mg300q1us41 mg75j6es50 MG400Q1US41 MG25Q2YS40 MG100Q2YS42 MIG20J901H MG50Q2YS40 mg100j6es5
Contextual Info: .3 UL Approvals List All devices are included in: File number: . E87989 Section number: 4. 1700 V Types MG30V2YS40 . 80* MG90V2YS40 . 80*

TOSHIBA IGBT

Abstract: failure-rate Toshiba MG200Q2YS40 igbt based high frequency inverter
Contextual Info: . 1 IGBT Derating at Elevated Case-Temperature range 5-1 5 khz with some applications operating to beyond 20 khz. At these frequencies switching-losses are significant and must be conside­ red during device selection. To assist in calcula­ ting device derating at normal operating

MG75J2YS40

Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Contextual Info: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a