MG200Q2 Search Results

Z1506

Abstract: Toshiba MG200Q2YS40
Contextual Info: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage

MG20002YS40

Contextual Info: MG200Q2YS40 U n i t in m m HIGH P O W E R SW ITC H IN G APPLICATIO N S. M O T O R C O N T R O L APPLICATIO N S. • H igh I n p u t Im pedance • High Speed 4 P a st - on T ub #110 tf = 0 .5 /< s Max. t r r = 0.G/<s(Max.) • Low S a t u r a t i o n V o lta g e

Toshiba MG200Q2YS40

Abstract: LT-15V MG200Q2YS40 YS40 OHS03 JE transistor
Contextual Info: TOSHIBA MG200Q2YS40 M G 2 0 0 Q 2 YS4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4 -F ast-on Tab #110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)

Contextual Info: MG200Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 200 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA

toshiba MG200Q2YS50

Abstract: MG200Q2YS50
Contextual Info: TO SHIBA MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2 YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode

Toshiba MG200Q2YS40

Abstract: MG200Q2YS40
Contextual Info: MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode

Toshiba MG200Q2YS40

Abstract: MG200Q2YS40
Contextual Info: MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.)

MG200Q2YS65H

Contextual Info: MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC

Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

mg200q2ys11

Abstract: MG200Q2YS1
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG200Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications 3-M 5 Motor Control Applications Features • High input impedance • High speed: tf = 1 .Ojas Max. • Low saturation voltage:

MG200Q2YS60A

Contextual Info: MG200Q2YS60A MITSUBISHI IGBT Module MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

transistor IR 652 P

Contextual Info: TO SH IBA M G200Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG200Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H igh Speed : tf= 0.3/is M ax. @Inductive Load Low Saturation Voltage

MG200Q2YS60A

Contextual Info: MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

MG200Q2YS65H

Contextual Info: MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2

Contextual Info: MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

K643

Abstract: mg200q2 Toshiba MG200Q2YS40 GE647
Contextual Info: TO SH IBA MG200Q2YS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGEST MG200Q2YS40 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • 4 - Fast -on Tab #110 High Input Impedance H ig h sp eed tf=0.5/<s Max.

Contextual Info: MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

Contextual Info: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage

Mg200q2ys50

Abstract: MG200 toshiba MG200Q2YS50
Contextual Info: MG200Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive Load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

Contextual Info: MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

Contextual Info: T O SH IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)

Toshiba MG200Q2YS40

Contextual Info: TOSHIBA MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mf i ?nnn?Y<; z Ln Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 -F ast-o n Tab #110 High Input Impedance High Speed : tf=0.5/^s Max. (Max.) Low Saturation Voltage

transistor JSW

Abstract: toshiba srf
Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

MG200Q2YS50

Abstract: toshiba MG200Q2YS50
Contextual Info: MG200Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max.)