MG 12V DIODE Search Results
MG 12V DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
| MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
| D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR | |||
| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
| D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
MG 12V DIODE Datasheets Context Search
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diode sy 160
Abstract: BLB102SYC-24V-P BLB102MGC-12V-P BLB102MGC-24V-P BLB102MGC-6V-P BLB102SYC-12V-P BLB102SYC-6V-P
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BLB102 BLB102-V MAR/01/2001 diode sy 160 BLB102SYC-24V-P BLB102MGC-12V-P BLB102MGC-24V-P BLB102MGC-6V-P BLB102SYC-12V-P BLB102SYC-6V-P | |
diode sy 400
Abstract: BLF041MGC-12V-P BLF041MGC-24V-P BLF041MGC-6V-P BLF041SYC-12V-P BLF041SYC-24V-P BLF041SYC-6V-P
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BLF041 BLF041-V MAR/01/2001 diode sy 400 BLF041MGC-12V-P BLF041MGC-24V-P BLF041MGC-6V-P BLF041SYC-12V-P BLF041SYC-24V-P BLF041SYC-6V-P | |
diode sy 160
Abstract: BLS101 BLS101MGC-12V-P BLS101MGC-24V-P BLS101MGC-6V-P BLS101SYC-12V-P BLS101SYC-24V-P BLS101SYC-6V-P
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BLS101 BLS101-V MAR/01/2001 diode sy 160 BLS101MGC-12V-P BLS101MGC-24V-P BLS101MGC-6V-P BLS101SYC-12V-P BLS101SYC-24V-P BLS101SYC-6V-P | |
diode sy 400
Abstract: diode sy 160 diode sy-250 BLF052MGC-12V-P BLF052MGC-24V-P BLF052MGC-6V-P BLF052SYC-12V-P BLF052SYC-24V-P BLF052SYC-6V-P MG 12v diode
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BLF052 BLF052-V MAR/01/2001 diode sy 400 diode sy 160 diode sy-250 BLF052MGC-12V-P BLF052MGC-24V-P BLF052MGC-6V-P BLF052SYC-12V-P BLF052SYC-24V-P BLF052SYC-6V-P MG 12v diode | |
diode sy 160
Abstract: diode sy Ic mega 16 BLB101SYC-12V-P BLB101SYC-24V-P BLB101SYC-6V-P BLB101MGC-12V-P BLB101MGC-24V-P BLB101MGC-6V-P
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BLB101 BLB101-V MAR/01/2001 diode sy 160 diode sy Ic mega 16 BLB101SYC-12V-P BLB101SYC-24V-P BLB101SYC-6V-P BLB101MGC-12V-P BLB101MGC-24V-P BLB101MGC-6V-P | |
diode sy 160
Abstract: diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P
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BLF051 BLF051-V MAR/01/2001 diode sy 160 diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P | |
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Contextual Info: www.eLED.com 4mm FLANGE BASED LED LAMPS Package Dimensions EBLF041SURCE HYPER RED EBLF041MGC MEGA GREEN EBLF041SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSSCURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches . |
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EBLF041SURCE EBLF041MGC EBLF041SYC For12V For28V EA0337 EBLF041-2/2 SEP/21/2001 | |
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Contextual Info: www.eLED.com 5mm FLANGE BASED LED LAMPS Package Dimensions EBLF052SURCE HYPER RED EBLF052MGC MEGA GREEN EBLF052SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches . |
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EBLF052SURCE EBLF052MGC EBLF052SYC For12V For28V EA0339 EBLF052-2/2 SEP/21/2001 | |
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Contextual Info: www.eLED.com 5mm FLANGE BASED LED LAMPS Package Dimensions EBLF051SURCE HYPER RED EBLF051MGC MEGA GREEN EBLF051SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches . |
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EBLF051SURCE EBLF051MGC EBLF051SYC For12V For28V EA0338 EBLF051-2/2 SEP/21/2001 | |
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Contextual Info: FSJ9055D, FSJ9055R HARRIS SEMICONDUCTOR 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, Tqs ON ~ 0.029S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs |
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FSJ9055D, FSJ9055R MIL-STD-750, MIL-S-19500, 100ms; 500ms; | |
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Contextual Info: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB102MGC MEGA GREEN EBLB102SURCE EBLB102SYC HYPER RED SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches . |
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EBLB102MGC EBLB102SURCE EBLB102SYC For12V For28V EA0330 SEP/21/2001 EBLB102-2/2 | |
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Contextual Info: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB101MGC MEGA GREEN EBLB101SURCE HYPER RED EBLB101SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches . |
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EBLB101MGC EBLB101SURCE EBLB101SYC For12V For28V EA0329 SEP/21/2001 EBLB101-2/2 | |
mev smd diode
Abstract: IRHNA67164 IRHNA63164 ir*7164
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PD-96959A IRHNA67164 IRHNA67164 IRHNA63164 90MeV/ MIL-STD-750, MlL-STD-750, mev smd diode IRHNA63164 ir*7164 | |
Diode SY 350Contextual Info: www.eLED.com 10mm SCREW BASED LED LAMPS Package Dimensions EBLS101MGC MEGA GREEN EBLS101SURCE HYPER RED EBLS101SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches . |
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EBLS101MGC EBLS101SURCE EBLS101SYC For12V For28V EA0340 SEP/21/2001 EBLS101-2/2 Diode SY 350 | |
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Contextual Info: FSGL230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both |
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FSGL230R FSGL230R | |
IRHYB63134CM
Abstract: IRHYB67134CM
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PD-96997 O-257AA) IRHYB67134CM IRHYB67134CM IRHYB63134CM 90MeV/ 5M-1994. O-257AA. | |
IRHNJ67134
Abstract: IRHNJ63134
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PD-96931A IRHNJ67134 IRHNJ67134 IRHNJ63134 90MeV/ MIL-STD-750, MlL-STD-750, IRHNJ63134 | |
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Contextual Info: FSGYE230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both |
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FSGYE230R FSGYE230R | |
mev smd diodeContextual Info: PD-96959 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides |
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PD-96959 IRHNA67164 IRHNA63164 90MeV/ MIL-STD-750, MlL-STD-750, mev smd diode | |
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Contextual Info: 2 m JANSR2N7404 a r ia s Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June1998 Features Description • 15A,-200V, rDS ON) = 0.290Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs |
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JANSR2N7404 -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms; | |
2E12
Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
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FSGL033R FSGL033R 2E12 FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET | |
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Contextual Info: FSGYE033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both |
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FSGYE033R FSGYE033R | |
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Contextual Info: 'f ^BSS JANSR2N7410 Form erly FSL110R4 March1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, r[js ON = 0.600£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s |
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FSL110R4 JANSR2N7410 O-205AF 254mm) | |
IRHYS63134CM
Abstract: IRHYS67134CM
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PD-96930A O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA. | |