MG 12V DIODE Search Results

diode sy 160

Abstract: BLB102SYC-24V-P BLB102MGC-12V-P BLB102MGC-24V-P BLB102MGC-6V-P BLB102SYC-12V-P BLB102SYC-6V-P
Contextual Info: 10mm BAYONET BASED LED LAMPS Features BLB102 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 400

Abstract: BLF041MGC-12V-P BLF041MGC-24V-P BLF041MGC-6V-P BLF041SYC-12V-P BLF041SYC-24V-P BLF041SYC-6V-P
Contextual Info: 4mm FLANGE BASED LED LAMPS Features BLF041 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 160

Abstract: BLS101 BLS101MGC-12V-P BLS101MGC-24V-P BLS101MGC-6V-P BLS101SYC-12V-P BLS101SYC-24V-P BLS101SYC-6V-P
Contextual Info: 10mm SCREW BASED LED LAMPS Features BLS101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 400

Abstract: diode sy 160 diode sy-250 BLF052MGC-12V-P BLF052MGC-24V-P BLF052MGC-6V-P BLF052SYC-12V-P BLF052SYC-24V-P BLF052SYC-6V-P MG 12v diode
Contextual Info: 5mm FLANGE BASED LED LAMPS Features BLF052 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 160

Abstract: diode sy Ic mega 16 BLB101SYC-12V-P BLB101SYC-24V-P BLB101SYC-6V-P BLB101MGC-12V-P BLB101MGC-24V-P BLB101MGC-6V-P
Contextual Info: 10mm BAYONET BASED LED LAMPS Features BLB101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 160

Abstract: diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P
Contextual Info: 5mm FLANGE BASED LED LAMPS Features BLF051 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

Contextual Info: www.eLED.com 4mm FLANGE BASED LED LAMPS Package Dimensions EBLF041SURCE HYPER RED EBLF041MGC MEGA GREEN EBLF041SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSSCURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: www.eLED.com 5mm FLANGE BASED LED LAMPS Package Dimensions EBLF052SURCE HYPER RED EBLF052MGC MEGA GREEN EBLF052SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: www.eLED.com 5mm FLANGE BASED LED LAMPS Package Dimensions EBLF051SURCE HYPER RED EBLF051MGC MEGA GREEN EBLF051SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: FSJ9055D, FSJ9055R HARRIS SEMICONDUCTOR 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, Tqs ON ~ 0.029S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB102MGC MEGA GREEN EBLB102SURCE EBLB102SYC HYPER RED SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB101MGC MEGA GREEN EBLB101SURCE HYPER RED EBLB101SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

mev smd diode

Abstract: IRHNA67164 IRHNA63164 ir*7164
Contextual Info: PD-96959A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 TM International Rectifier’s R6 technology provides

Diode SY 350

Contextual Info: www.eLED.com 10mm SCREW BASED LED LAMPS Package Dimensions EBLS101MGC MEGA GREEN EBLS101SURCE HYPER RED EBLS101SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: FSGL230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

IRHYB63134CM

Abstract: IRHYB67134CM
Contextual Info: PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYB63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides

IRHNJ67134

Abstract: IRHNJ63134
Contextual Info: PD-96931A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides

Contextual Info: FSGYE230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

mev smd diode

Contextual Info: PD-96959 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides

Contextual Info: 2 m JANSR2N7404 a r ia s Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June1998 Features Description • 15A,-200V, rDS ON) = 0.290Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs

2E12

Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Contextual Info: FSGYE033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Contextual Info: 'f ^BSS JANSR2N7410 Form erly FSL110R4 March1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, r[js ON = 0.600£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

IRHYS63134CM

Abstract: IRHYS67134CM
Contextual Info: PD-96930A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides