MF21 Search Results

880NM

Abstract: MF212 120731-1
Contextual Info: MF212 High Performance Duplex DS5453 ISSUE 1 May 2001 Ordering Information MF212 MF212 MF212 MF212 MF212 11841.11 TO-46 Package 12073.11 ST Housing 13052.11 SC Housing 12015.11 SMA Housing 13016.11 FC Housing ST SC SMA FC Note: Rated Fiber coupled power apply only on the TO-46 package,

transistor NEC K 946

Abstract: C947 BU x460 2SC3618
Contextual Info: — S7 • $ /— h '> > ; = ! > t . 9 h S ilic o n T ra n s is to r 2SC3618 N 2SC 3618Ü , P N X t 0 ^ + 7 '> ; i / ^ ' > y ~7" '] "/ Y l C m A ' B ' < - v ' r - y ^ M m ^ W 7 > y X ? T", =1 > h h = 7 7 . 9 ^ - {i : mmj K 7 -i 1.5 + 0.1 M # 3 _ O h p E i ' ^ i 9 ÿ i3 ' C i s i l' ' ' o

rg6 f connector screw on

Abstract: f connector rg6 coax MCX Female Panel Chassis Connector SMA female push on connector 423 rca
Contextual Info: F Series F Series connectors are cost effective connectors using a screw thread coupling system. This series was specifically designed for use with NTSC TV ANTENNA applications. The NTSC System is used in many countries including the USA, Canada, Japan, Mexico and Taiwan. Additional applications include Hybrid Fiber Coax Networks, High Speed Modems and CIMs

5N20

Abstract: 5n50 ME15N06E MF2N60E me15n MG2.5N20 MG2P50 MG2.5N50 ME10N10E-F ME12P06
Contextual Info: - 146 - f m s tt € m & m m. * * _ K V * (V) f*t (A) * * MEIONIOE-F 0*0?- MOS N 100 DSS 10 D ME12P06 0*0*- MOS P -60 DSS -12 D ME12P06-F 0*0?- MOS P -60 DSS -12 D ME15N06E 0 *0?- MOS N 60 DSS 15 D ME15N06E-F 0 * 0 ?- MOS N 60 DSS 15 D MF2N60E 0 *0?- MOS

PA1454H

Abstract: IPA1454
Contextual Info: zr — ^ • > — C o m p o u n d P o w e r T ra n s is to r AR R A Y iiPA1454 /^ P A 1 4 5 4 tt 4 * Jf - r t ^ N P N l'7 > '> 'X $ 7 U 'iT , 7 "U > ^ • m m mii :m m £ -f 7 ° ^ -f 2 • 7 7 7 V 5 <J • E C R f Î C D ig lit ^ f ? ^ , VTR • 7 V 4 .0

7974a

Abstract: 2SD2403
Contextual Info: ïr — ^ — h '> U =1 > h Silicon Transistor 2SD2403 N P N itf^ v T ^ u ^ v U ju r a « : * « « , 2 S D 2 4 0 3 t t /J 't ë fl» a a* 6 U W x '- ÿ ^ ï - * m m z i> ' p m m x ' f v i - x r m t •# U T * U , D C / D C w m m e : m m ) • K 7 < / * £ iî lC » l? T o

2SB1318

Abstract: BH rn transistor 3Fp transistor
Contextual Info: zr— S • — K NEC ^ Silicon P o w e r Transistor 2SB1318 PNPI ’J=l> m « W t : mm 7.0 MAX. 1-2 o y — *J > h y ^ f â iC O t z & y , o S i t § Ë Â S^C I , (T a L Ä * M S V c E (s a t ) ~ c ~ t o = 25 °C ) B& g -§§- ¥ /E fï a V 9 9 • '•'i — X fai 16 Eh

transistor DK qj

Abstract: 2SK1587 JE 04 DIODE Z5
Contextual Info: 52— & N E • $ /— h MOS M O S Field E ffe ct T ran sis to r C 2 MOS 2SK1587 i , ^ 'y f 'jïŒ S 1 K 5 8 7 FET n m m ( ^ - f i : mm i§ g g j^ -7 V )N MOS F E T f t o ^ MO S F E T l i t > m a w i& < , T ^ S f c à ò , V l / - , i) « a 1. 5 ± 0.1

04 NG 537

Abstract: 2SK1960 transistor w bh 212 7876A
Contextual Info: NEC M O S F ie ld E ffe c t T ra n s is to r 2SK1960 N M O S F ET 2SK19 60 Ü1. 5 V I E B j ^ y w N ^ ^ / W f f é ^ M O S F E T T ' h n , f t i f .- :- .i;< # ;-:•■ è , ^"/ Y ^ t k v -f r « i t lytis <£ £ # H t /ÿ s £ & : mm) 4.5 ± 0.1 £ > !? * *

2SB1300

Abstract: PH 06
Contextual Info: • 5 /— h Silicon T ran sis to r 2SB1300 is T J U M > ' =1V P N P ic f f i j a a s « * * * « *? j : c r + » * ; * < 4# v * >?m - ^ ii - f t V CE ( s a t ) ~ V 0.42 < , Ic(DO — TYP. ( @ I c /I B= — 3.0 L # ' & A S O ^ 'J A , I c(pulse)= — 5 . 0

C947

Abstract: NF 022 NEC IEI-620 2SK680A T460 TC-7831A transistor NEC K 946
Contextual Info: Mos M O S Field E ffe c t T ran sis to r 2SK680A MOS F E T 2SK680A i, N ^ ^ / H IO ^ M O S iz x £ F E T T ', -y f> fs < , ^ < n K y # m m o j i à t i r ^ ò X ^ i ò , * (W 5 V ?1 3 U C Ì • mm Tto - ? , 7 ? 1.5 ±0.1 A tr o f à j - y f à t r Ì ' C t o

2SK2110

Contextual Info: t * — •£? • S ' — NEC h h ^ ^ M O S Field Effect Transistor 2SK2110 2 S K 2 1 1 0 & N 3 1 -V Z J U t i i M O S F E T V S U , « fc : mm 5 V H ;Ü ^ IC < 7 )fc ti r t C J: « * < •> 51> ^ " i i T ' î o *> *£ Î5 W g ;< , * < * y 3 1> 7 ìl]g fc ìli,'£ ò & ,

pa1434

Abstract: 5504 HPA1434H
Contextual Info: zr — $ • v — Î S ' n / \ 0r7 — C o m p o u n d P o w e r T r a n s i s t o r A R R A Y iiPA1434 N P N X + - W W g v /,P A 1 4 3 4 li 4 H i l ^ l c N P N h 7 > y ' ^ $ 7 K T , ' j 3 > 7 #IJ > £ • h 7 > y 7 ^ m ii : 7 K mm; 2 < 7°7 < £ • 7 7- 7 v 5. U • E C R ^ C D Î i X l l ^ S î ^ , V T R • 7 v

tlu 011

Abstract: 2SB1571
Contextual Info: T — — b ' > U 3 > h 7 > V X $ S ilic o n T r a n s is to r 2SB1571 PNPX V =J > fé J S ïÆ 2 S B 1 5 7 1 4' i f f f iif c it 'Î i, 6 ^ ü T *5 U h -7 > v * $ * i t J , D C / D C * t ì : mm 1 .5 ± # 0 .1 3 & — o z i U ? ^ f ê Ÿ D ^ Œ A ^ Ê t 'o

2SJ197

Contextual Info: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X

D1026

Abstract: 2SK2364 2SK2476 wy 509
Contextual Info: M O S F ie ld E ffe c t T r a n s is to r 2SK2476 N ^ - Ÿ T 'J l'/W x -M O S FET m m 2SK2363/2SK2364«N5l + ^;U Ìé M / W - MOS FET7\ X -f -y ^ > ^ 1 4 ^ ' 1 * n T Ì 3 V , # -f -y 3=-> ft O y - M f iI± 3 0 V f Ä lIT '- r o O tìÀ Ciss = 590 p F t l ï

MIL-C-83513

Abstract: 26AWG26 36wire
Contextual Info: The Interconnect Solution Source Filtered Cable Connectors MF-222-015-261-22WS-CF3 .050" Rugged Metal MF MF-212-015-145-4100-CF6 PLUG: RECEPTACLE: PLUG MF-212-015-145-4100-CF6 MF-222-015-261-22WS-CF3 RECEPTACLE SERIES MF .050" Rugged Metal I/O Connector NOTE: MF mates with MK, ML, MM, MN receptacles

capacitor 1000 MF

Abstract: MF-222-015-261-22WS-CF3
Contextual Info: The Interconnect Solution Source Filtered Cable Connectors MF-222-015-261-22WS-CF3 .050" Rugged Metal MF MF-212-015-145-4100-CF6 PLUG: RECEPTACLE: PLUG MF-212-015-145-4100-CF6 MF-222-015-261-22WS-CF3 RECEPTACLE SERIES MF .050" Rugged Metal I/O Connector NOTE: MF mates with MK, ML, MM, MN receptacles

Contextual Info: TM7050C MCF •Features Small and thin SMD 2-pole filter. Product height 1.0mm using ceramic package. Hermetic sealing by seam welding Now printing Center frequency covers a range from 20 to 30MHz. Lead-free product and reflow solderable. ■Standard Specifications

BPSK MODULATORS

Contextual Info: .BPSK MODULATORS INPUT 1 dB COMP. PT dBm VSWR MIN MAX 2.0 2.0 +1 + 10 1.5:1 1.5:1 101 101 1 1 M F -2 0 6 0.4 0.4 2.0 2.0 +1 + 10 2.0:1 2.0:1 101 101 1 1 MF-208 MF-218 0.4 0.4 4.0 4.0 + 1 + 10 3.0:1 3.0:1 101 101 2 2 M F -2 1 O t M F -2 2 0 t

SBM-C2

Abstract: MP-201 711S MK-711S BPSK MODULATORS MF-206 MF-210 MF-216 MP-215 MF-208
Contextual Info: MODULATORS BPSK SURFACE-MOUNT MODELS INPUT CARRIER FREQUENCY 1 2 1 2 INSERTION LOSS dB (MHz) TYP/MAX - 3.5/4.5 4.5/5.5 2.5/4.5 2.5/4.5 200 600 200 600 129 AMPLITUDE UNBALANCE (dB) MAX 0.4 0.4 0.4 0.4 PHASE UNBALANCE (Degrees) MAX 4.0 4.0 2.0 2.0 134 INPUT 1 dB

sf 128 transistor

Abstract: 2SK2159 TRANSISTOR SF 128 6GDG TC-7989A
Contextual Info: h ^ > v x & MOS Field Effect Transistor 2SK2159 N MOS FET m 2SK215 9 it 1.5 V i l Ü £ < y<DN3- -V % U , f£ Œ T i ® -? è , m x 'f y i - > 7 m MOS FETT' & w t f o K t-T t '/ c ® , IM & : m m m 4.5 ±0.1 < £ !> '(£ - r i * * 7 ÎC i f W f ê Œ ®

jft 1411

Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
Contextual Info: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o

pa1476h

Abstract: PA1476H nec PA1476 UPA1476H R2 KL
Contextual Info: ^ / \ ° 7 - C o m p o u n d P o w e r T ran s is to r AR R A Y / j P NPNX ¥ 7 1 4 7 6 -V J IM 'S V =3> /^P A 1 476ti 4 * Ÿ r t M N P N S ÿ > v 'X £ T U -f T% 7°U > 2 • £ -f 7° 7 -i 2 • 7 A (3 M & : m m ? V 5 U • E C R U C O g l U ^ i î ^ , VTR • 7 v