METHOD Search Results

Contextual Info: SN74LVC00 QUADRUPLE 2-INPUT POSITIVE-NAND GATE SCAS279B-JANUARY 1993 - REVISED JULY 1995 I • EP/C Enhanced-Performance Implanted CMOS Submicron Process • ESD Protection Exceeds 2000 V Per MII-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN74LVC157 QUADRUPLE 2-LINE TO 1-UNE DATA SELECTOR/MULTIPLEXER SCAS292B-JANUARY 19 9 3 - REVISED JULY 1995 I • EPIC Enhanced-Performance Implanted CMOS Submicron Process • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model

Contextual Info: SN74LVCU04 HEX INVERTER SCAS282B - JANUARY 1993 - REVISED JULY 1995 D, DB, OR PW PACKAGE TOP VIEW • EP/C (Enhanced-Performance Implanted CMOS) Submicron Process I • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model

TE32D

Abstract: EIA and EIAJ tape standards TE3212 EIA and EIAJ standards RC-1009B TA7745
Contextual Info: 6. PACKING INFORMATION To deliver flat IC packages, three package method are available: the same stick packages as the ordinary DIP type, taping, and embossed taping. 6-1 Stick Specifications for Flat Packages • Shape and dimensions Example: FLP type Fig. 6-1

Contextual Info: SN74LVC126A QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS SCAS339H – MARCH 1994 – REVISED OCTOBER 1998 D D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: SN74ALVC125 QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS SCES110D – JULY 1997 – REVISED DECEMBER 1998 D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN74ALVC14 HEX SCHMITT-TRIGGER INVERTER SCES107E – JULY 1997 – REVISED AUGUST 1999 D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: POWER CUSTOM MAGNETICS • Industry standard packages optimized for customer specific needs • SMPS IC manufacturers support Typical Core Power Handling Capabilities CEP Core CEP10 shown EE Core EE16 shown EFD Core EFDD15 shown EP Core EP13 shown NOTES: 1. Values shown are typical and can be modified depending upon core material, wire gauge, and cooling method s used.

Contextual Info: Device Orientation www.vishay.com Vishay Siliconix Device Orientation for MLF9x9, MLF10x10, MLP6x6 DEVICE ORIENTATION PACKAGE METHOD MLF9x9, MLF10x10 T1 MLP6x6 T1 Revision control of this drawing is maintained through Document Control, Pack Specification-PACK-0007-20

Contextual Info: Silicon Technology Reliability www.vishay.com Vishay Siliconix N-CHANNEL ACCELERATED OPERATING LIFE TEST RESULT Sample Size 18 368 Equivalent Device Hours 2 954 669 261 Failure Rate in FIT 2.505 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,

CY8C38

Abstract: CY8C3866 Cypress touch panel BOSCH CONNECTOR CATALOG CY8C3866LTI-068 CY8C3866PVI-070 CY8C3866AXI-039
Contextual Info: PSoC 3: CY8C38 Family Datasheet ® Programmable System-on-Chip PSoC General Description With its unique array of configurable blocks, PSoC® 3 is a true system level solution providing microcontroller unit (MCU), memory, analog, and digital peripheral functions in a single chip. The CY8C38 family offers a modern method of signal acquisition, signal

loop control TL431

Abstract: u116 Unitrode DN photo coupler application note 431 regulator
Contextual Info: DN-32 Design Note OPTOCOUPLER FEEDBACK DRIVE TECHNIQUES The use of optocouplers in the feedback path of switch­ mode power supplies is probably one of the most com­ mon practices in the industry. Benefits of this method include low component cost, high voltage isolation and

TF16AT0.50

Abstract: TF16AT0.5 TF16AT0 7A 100 16s TF16aT TF16AT3.15 TF16SN2.50 315A 08 TF10BN1.00 TF16SN
Contextual Info: 1733 Reader's Spreads pg1-203:document 1/27/09 4:17 PM Page 181 TF thin film chip fuse EU features dimensions and construction L c W t d Protective Coating Type c Dimensions inches mm W c d circuit protection • Small, lightweight design • Special manufacturing method stabilizing fusing

HIR-C06

Abstract: L298* application
Contextual Info: Technical Data Sheet High Power Infrared LED HIR-C06/L298-P01/TR Features ․Small package with high efficiency ․Peak wavelength λp=850nm ․Soldering methods:SMT ․Thermal resistance junction to lead : 40℃/W. ․Moisture Sensitivity Level: 1 ․Pb free

M22-XST

Abstract: KSS cable marker wago 870 3d printer 200913 plotter 350 XM-L 25817-8 plotter ip-220
Contextual Info: Item no. 258-297 Item no. 258-298 Thermal transfer printers Printing method Thermal/Thermal transfer Printing method Thermal/thermal transfer Ink ribbon for marker strips Print resolution 203 dpi Print width max. 104 mm Print resolution 300 dpi Label width

NNC25X37LG2

Abstract: Wiring Duct NNC100X100LG2 NNC25X25LG2
Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Panduct Type NNC Halogen-Free Metric Wiring Duct • Material: Halogen-free modified polyphenylene oxide mPPO material as verified with IEC 60754-2 test method (test on gases evolved during combustion of electric cables)

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM 2-Wire BR24T04-W General Description 2 BR24T04-W is a serial EEPROM of I C BUS Interface Method Packages W(Typ) x D(Typ) x H(Max) Features „ Completely conforming to the world standard I2C BUS.

Contextual Info: Datasheet Serial EEPROM Series Automotive EEPROM 125℃ Operation SPI BUS EEPROM BR35Hxxx-WC 16K 32K 64K 128K ●General Description BR35Hxxx-WC is a SPI BUS interface method serial EEPROM. ●Features „ High speed clock operation up to 5MHz(Max.) „ 2.5V to 5.5V single power source operation most suitable for

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM 2-Wire BR24G64-3A General Description 2 BR24G64-3A is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) „ All controls available by 2 ports of serial clock(SCL) and

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM 2-Wire BR24Gxxx-3A (128K 256K 1M) General Description BR24Gxxx-3A is a serial EEPROM of I2C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) „ All controls available by 2 ports of serial clock(SCL) and

Contextual Info: Datasheet Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM 3-Wire BR93G66-3A General Description BR93G66-3A is serial EEPROM of Serial 3-Line Interface Method. They are 16bit organization and CS PIN is the first PIN in their PIN configuration. Packages W(Typ) x D(Typ)x H(Max)

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM 2-Wire BR24T256-W General Description 2 BR24T256-W is a serial EEPROM of I C BUS Interface Method Packages W(Typ) x D(Typ) x H(Max) Features „ Completely conforming to the world standard I2C

4G25

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM 2-Wire BR24G256-3 General Description BR24G256-3 is a serial EEPROM of I2C BUS Interface Method Packages W(Typ) x D(Typ) x H(Max) Features „ Completely conforming to the world standard I2C BUS.

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM 2-Wire BR24G512-3A General Description BR24G512-3A is a serial EEPROM of I2C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) „ All controls available by 2 ports of serial clock (SCL)