MESFET SIC Search Results

MESFET SIC Result Highlights (5)

Part	Manufacturer	Description	Download
MG800FXF1ZMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD	Datasheet
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET	Datasheet
TRS2E65H	Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 2 A, TO-220-2L	Datasheet
TRS10V65H	Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V,104 A, DFN8×8	Datasheet
TRS8V65H	Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 8 A, DFN8×8	Datasheet

MESFET SIC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TH 2066.4 Contextual Info: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	crf24010d crf24010 crf240 th 2066.4	PDF
60522 Abstract: 8822 TRANSISTOR CuMoCu CRF24010 CRF24010D 61256 30639 Contextual Info: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	crf24010d crf24010 crf240 60522 +48822 transistor cumocu 61256 30639	PDF
30639 Abstract: CuMoCu Immo 65808 TH 2066.4 83348 CRF24010 CRF24010D 98737 transistor 13602 Contextual Info: CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	crf24010d crf24010 crf240 30639 +7cumocu immo 65808 th 2066.4 83348 98737 transistor 13602	PDF
ATC600S Abstract: AVX0805 AVX1206 CRF35010 Contextual Info: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has	Original	crf35010f crf35010 crf350 atc600s +2avx0805 avx1206	PDF
CRF24060 Abstract: CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers Contextual Info: CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	crf24060 crf240 crf24060f c17ah +4transistor substitution transistor substitution data book crf-24060 rogers	PDF
25V/FTP 50210 Abstract: CRF24060F Contextual Info: PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	crf24060 crf240 25v/ftp 50210 crf24060f	PDF
TC 9164 N Abstract: 95160 85713 CuMoCu CRF24060 CRF24060D F240 08816 Contextual Info: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	crf24060d crf24060 tc 9164 n 95160 +485713 cumocu f240 08816	PDF
ATC1206 Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	crf24010 crf240 f24010f atc1206 +5avx08051c222mat2a jesd22-a114 crf24010f hi1206 dsa00291593.txt	PDF
C17AH Abstract: CRF24060F CRF24060 Contextual Info: PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	crf24060 crf240 c17ah crf24060f	PDF
Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	crf24010 crf240 f24010f	PDF
Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	crf24010 crf240 f24010f	PDF
CRF24010F Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324 Contextual Info: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	crf24010 crf240 f24010f crf24010f +80592 transistor substitution chart atc 17-33 crf24010p substrate 106-682 2244 porcelain 127324	PDF
Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	crf24010 crf240 f24010f	PDF
Contextual Info: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	crf24060d crf24060	PDF

cgh60120D Abstract: 204C gan7 Contextual Info: APPLICATION NOTE Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors Introduction The objective of this application note is to provide users of Cree wide bandgap devices with a guideline of the thermal performance of high power SiC MESFET and GaN HEMT transistors. It explains	Original	appnote-010 cgh60120d 204c gan7	PDF
v628 Abstract: CFK22 d200pa Contextual Info: SIC D TELEFUNKEN ELECTRONIC TilUKFdDMKllM electronic • fl^SOOU 0005401 4 T - 3/- Z S~ CFK22 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common Gate 1 configuration;	OCR Scan	cfk22 569-gs v628 d200pa	PDF
MESFET SiC Abstract: CAPACITOR, Ceramic, .005 UF 05003-001 "silicon carbide" FET Cree Microwave CRF-05003-101 silicon carbide powder "silicon carbide" device transistor mesfet Contextual Info: CRF-05003-001 CRF-05003-101 MICROWAVE 3W SiC RF Power MESFET Self-Biased Amplifier Features • • • • • • • CASE STYLE 001 CRF-05003-001 Applications 10 dB Small Signal Gain • Class A Operation 3 W Minimum P1dB • General Purpose Amplifiers	Original	crf-05003-001 crf-05003-101 crf-05003 mesfet sic +7capacitor, ceramic, .005 uf 05003-001 silicon carbide" fet cree microwave silicon carbide powder silicon carbide" device transistor mesfet	PDF
Transistor BC 227 Abstract: transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235 Contextual Info: TELEFUNKEN ELECTRONIC âlC D • ô'téGO'ifei 000531a *5 7 W Ê M G G CF 910 Marked with: CF1 TFitLitFdflKlKdM] electronic Creative Technologies - T = - 3 / - 2 , s r N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications:	OCR Scan	000531a 569-gs transistor bc 227 transistor bf 910 +4cf-910 bc238c transistor marking v12 ghz transistor bf 235	PDF
Cree Microwave Abstract: CRF-24060 silicon carbide transistor 20607 20607 ma 75 809 Contextual Info: CRF-24060-101 60 W SiC RF Power MESFET PRELIMINARY Features Applications • • • • • • • • • • • • • • 13 dB Small Signal Gain 50 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 2.7 GHz Operation	Original	crf-24060-101 crf-24060 cree microwave silicon carbide +2transistor 20607 20607 ma 75 809	PDF
TRANSISTOR BC 707 Abstract: CFK40 transistor bf 274 BF 273 transistor Contextual Info: TELEFUNKEN ELECTRONIC SIC II • 8'IBOO‘ib 0Q05M13 = v -s z -a s - TitLKFtUlMKiMl electronic CFK40 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers up to 2 GHz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with	OCR Scan	0q05m13 cfk40 569-gs transistor bc 707 +2transistor bf 274 bf 273 transistor	PDF
169113 Abstract: 174867 173425 Contextual Info: CRF-24060-101 60 W SiC RF Power MESFET PRELIMINARY Features Applications • • • • • • • • • • • • • • 13 dB Small Signal Gain 50 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 2.7 GHz Operation	Original	crf-24060-101 crf-24060 169113 174867 +1173425	PDF
Contextual Info: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage	Original	crf-24010-001 crf-24010-101 crf-24010	PDF
CRF-24010-101 Abstract: CRF-24010 CRF-24010-001 88933 42676 Contextual Info: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage	Original	crf-24010-001 crf-24010-101 crf-24010 88933 +142676	PDF
CRF-22010 Abstract: CRF-22010-001 CRF-22010-101 155958 Contextual Info: CRF-22010-001 CRF-22010-101 10 W SiC RF Power MESFET Features Applications • • • • • • • • • • • • 12 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 3 GHz Operation High Efficiency	Original	crf-22010-001 crf-22010-101 crf-22010 155958	PDF

MESFET SIC Search Results

MESFET SIC Result Highlights (5)

MESFET SIC Datasheets Context Search

TH 2066.4

60522

30639

ATC600S

CRF24060

25V/FTP 50210

TC 9164 N

ATC1206

C17AH

CRF24010F

cgh60120D

v628

MESFET SiC

Transistor BC 227

Cree Microwave

TRANSISTOR BC 707

169113

CRF-24010-101

CRF-22010