MESFET LOW NOISE Search Results

Ablebond 36-2

Abstract: Multicore Solders
Contextual Info: MTLS LTD ^ T - 3 /- A 5 " Three Five Product Information GaAs MESFET P35-1105 This New Generation MESFET has been designed for improved performance and is ideally suited for: Applications • Low noise amplifiers 12GHz • Tube drive amplifiers • Low noise oscillators

95210

Contextual Info: Hl Alpha Low Noise GaAs MESFET Chip AFM02N6-000 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 GHz 0.25 |im Ti/Pt/Au Gates 400 600 500 1cm = 38.7jim Passivated Surface Description Alpha’s AFM02N6-000 low noise GaAs MESFET

CI 7422

Abstract: AFM02N6-000
Contextual Info: ESAlpha Low Noise GaAs MESFET Chip AFM02N6-000 Features • Low Noise Figure, 1.0 dB @ 12 GHz ■ High Associated Gain, 9.5 dB @ 12 GHz ■ High MAG, >12 dB @ 12 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface Description 1 cm = 38.7 urn The AFM02N6-000 low noise GaAs MESFET chip has

Contextual Info: ALPHA I N D / SEMICONDUCTOR 33E D • OSASES DDOIOIS 5 «ALP T 'S i-^ S Ka-Band AF040N2-00 Low Noise MBE MESFET Features Description ■ ■ ■ ■ ■ ■ ■ ■ The AF040N2-00 is a .25 x 200 micron low noise MBE MESFET with E-beam written gates for excellent performance and high reproducibility.

GaAs MESFET

Abstract: mesfet
Contextual Info: Section 1 GaAs FETs and PHEMTs Table of Contents Surface Mount GaAs M E S F E T . 1-3 Low Noise GaAs MESFET Chip .

Contextual Info: MMIC AP201 Product Features Application • 50 ~ 1000MHz • GaAs MESFET MMIC • 40dBm Output IP3 • 14dB Gain • 21dBm P1 dB • SOT-89 Package • High Linearity Drive Amplifier Description Package Type: SOT-89 AP201 is a gain block amplifier designed with GaAs MESFET MMIC in a low cost SOT-89 package.

sot89 mmic 25

Abstract: ap201 mmic amplifier sot-89 mmic sot-89 AP-201 MESFET GaAs MMIC Gain Block sot-89
Contextual Info: MMIC AP201 Product Features Application • 50 ~ 1000MHz • GaAs MESFET MMIC • 40dBm Output IP3 • 14dB Gain • 21dBm P1 dB • SOT-89 Package • High Linearity Drive Amplifier Description Package Type: SOT-89 AP201 is a gain block amplifier designed with GaAs MESFET MMIC in a low cost SOT-89 package.

4435 ag

Abstract: 5q 1265 rf
Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz

L to Ku Band Low Noise GaAs MESFET

Contextual Info: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY

08GHz

Contextual Info: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A

3SK189

Contextual Info: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A

QFN3

Abstract: D31044
Contextual Info: Active Down Mixer MO9Q Product Features Application • Integrated Monolithic GaAs MESFET • Active Mixer Packages Module • Pb-free 3mm 16-pin QFN package • Lower Manufacturing Cost • Higher Productivity and Reliability • Very Low Noise Figure & Low Distortion

Contextual Info: Active Up Mixer MO4Q Product Features Application • Integrated Monolithic GaAs MESFET • Active Mixer Packages Module • Pb-free 3mm 16-pin QFN package • Lower Manufacturing Cost • Higher Productivity and Reliability • Very Low Noise Figure & Low Distortion

NE76038

Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
Contextual Info: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated

QFN3

Abstract: HHM1516 HHM15 RFHIC MIXER SCHEMATIC DIAGRAM
Contextual Info: Active Up Mixer MO4Q Product Features Application • Integrated Monolithic GaAs MESFET • Active Mixer Packages Module • Pb-free 3mm 16-pin QFN package • Lower Manufacturing Cost • Higher Productivity and Reliability • Very Low Noise Figure & Low Distortion

RFCA8818

Abstract: RFMD 1500
Contextual Info: RFMD . RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier The RFMD® RFCA8818 is a low noise, linear high performance GaAs MESFET MMIC amplifier. The RFCA8818 contains two amplifiers for use in wideband push-pull CATV amplifiers requiring

sem 2106

Abstract: 4957 GM
Contextual Info: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE76118 NOISE FIGURE & AS SO CIATED GAIN v s . FREQUENCY LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) m LOW NOISE FIGURE: < CD 0.8 dB typical at 2 GHz c cd HIGH ASSOCIATED GAIN: CD

GM15

Abstract: 137 marking Micro-X
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

FPD1500SOT89

Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures
Contextual Info: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency

35 micro-X Package MARKING CODE Q

Abstract: transistor equivalent book FOR D 1047 zo 607 MA marking code s22 microwave transistor siemens transistor GaAS marking 576 zo 607 CFY25 CFY25-20 CFY25-20P
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

NE76038

Abstract: NE76038-T1
Contextual Info: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES_ • NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: V ds = 3 V, Ids = 10 m A 1.8 dB typical at 12 GHz • NE76038 * HIGH ASSOCIATED GAIN: I I I I- r 24

marking code s22

Abstract: zo 607 MA CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

hp 1458

Abstract: SGF33 3048A sb wa 340
Contextual Info: Ordering number : ENN7196A SGF33 N-Channel GaAs MESFET SGF33 For C to Ku-Band Local Oscillator and Amplifier Features • • • • Package Dimensions Low phase noise. Highly reliable protection film. Automatic surface mounting supported. MCPH4 package.

DCS1800

Abstract: SLM-20T smdi
Contextual Info: SLM-20T Y SLM-20T(Y) 1700 MHz to 2000MHz High Linearity Low Noise Amplifier Module 1700MHz to 2000MHz HIGH LINEARITY LOW NOISE AMPLIFIER MODULE NOT FOR NEW DESIGNS RoHS Compliant (Y Part Number) Product Description Features GaAs HBT „ „ „ „ „ DE GaAs MESFET