MESFET AMPLIFIER SCHEMATIC Search Results

3906 PNP TRANSISTOR

Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Contextual Info: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET

MRF9820T1

Abstract: 16 SOT-143 MOTOROLA
Contextual Info: MOTOROLA Order this document by MRF9820T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line GaAs MESFET AGC Amplifier MRF9820T1 The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use in low noise front end amplifier or downconverter applications. The device

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT

RMM2080

Abstract: power amplifier 2-18GHZ 18GHz GC-1 dual-gate
Contextual Info: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier General Description Features The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-µm gate MESFET devices fabricated on a

SPB2026Z

Abstract: SPB2026ZSR
Contextual Info: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features GaAs HBT p GaAs MESFET     Applications V c c = 5V Functional Block Diagram SiGe BiCMOS 

Contextual Info: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier General Description Features The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-µm gate MESFET devices fabricated on a

Contextual Info: MICROWAVE HMC308 CORPORATION GENERAL PURPOSE 30 mW GaAs AMPLIFIER 1.3 - 3.0 GHz V00.0900 J UNE 2000 AMPLIFIERS 1 Features General Description P1dB Output Power: + 15 dBm @ +5V The HMC308 is a low cost MESFET MMIC amplifier that operates from a single +3 to +5V

dual-gate

Abstract: GC122
Contextual Info: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Fairchild Semiconductor's RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a

RAYTHEON

Abstract: an 7073 Raytheon Company RMM2080 dual-gate GC122
Contextual Info: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating

GC122

Abstract: DC TO 18GHZ RF AMPLIFIER MMIC mmic distributed amplifier RAYTHEON RMM2080 high power fet amplifier schematic wideband automatic gain control S11510 dual-gate
Contextual Info: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating

MA08506D

Contextual Info: MA08506D 8W Power Amplifier Die 9.5 - 10.5 GHz Advanced Information Features •= •= VDD VDD 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance •= Self-Aligned MSAG MESFET Process RF IN RF OUT VGG Functional Schematic Description Maximum Ratings (T

ATF54143.s2p

Abstract: 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF-54143 ATF54143 atf54143 pHEMT AN-1222 BCV62C
Contextual Info: A 100 MHz to 500 MHz Low Noise Feedback Amplifier using ATF-54143 Application Note 5057 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide GaAs devices, MESFET and pHEMT. Power amplifiers based on GaAs can achieve high efficiency

Contextual Info: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- • GaAs MESFET Si Bi-CMOS

MESFET Application

Contextual Info: HMC637LP5 / 637LP5E v02.0709 Amplifiers - lineAr & power - smT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HmC637lp5 e wideband pA is ideal for: p1dB output power: +29 dBm • Telecom infrastructure Gain: 13 dB

Contextual Info: HMC637LP5 / 637LP5E v02.0709 Amplifiers - Linear & Power - SMT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB

MESFET Application

Contextual Info: HMC637LP5/637LP5E v03.1213 Amplifiers - SMT GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT

transistor C55 7B

Abstract: AT90USB1286-16MU SSL8000000 transistor C55 7c EPM570T100C5 SSL800 SSL8000000E18FAE C1005C0G1H101J C1005C0G1H151J MAX6126
Contextual Info: 19-4147; Rev 1; 9/08 MAX11014 Evaluation Kit The MAX11014 evaluation kit EV kit provides a proven design to evaluate the MAX11014 automatic RF MESFET amplifier drain-current controller using an Altera complex programmable logic device (CPLD) containing the

Contextual Info: TAT8858A1H CATV Infrastructure Push-Pull Amplifier Applications • • • • CATV Line Amplifiers CATV System Amplifiers Distribution Nodes Green Applications SOIC-16 Wide Package Product Features Functional Block Diagram 75 Ω, 50-1000 MHz Bandwidth GaAs pHEMT & MESFET Technology

Contextual Info: HMC637LP5/637LP5E v03.1213 AMPLIFIERS - SMT GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT

Contextual Info: 1 Ï X n l HEW LETT WLkM PAC KARD 6-20 GHz High-Gain Amplifier Technical Data HMMC-5620 Features Description The HMMC-5620 is a wideband GaAs MMIC Amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain,

Contextual Info: 3.5V 3.3W RF Power Amplifier 1C for GSM ITT2110AH / ITT2111 AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual

C1027

Abstract: transistor c1027 c1027 transistor C1032 C1007 tp1002 tp1006 TP1003 C1015 transistor C1018
Contextual Info: Application Note RFS1006-AN1 Application Note for RFS1006 Evaluation Board Power Sequencing The RFS1006 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF

900MHZ

Abstract: IPC-SM-782 RF6100-1
Contextual Info: RF6100-1 3V 900MHZ LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V CDMA/AMPS Cellular Handset • Spread-Spectrum System • 3V CDMA20001/X Cellular Handset Product Description Optimum Technology Matching Applied 9 Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS

ITT2110AH

Abstract: ITT2111AH ITT2112AH ITT211X ITTT2112AH
Contextual Info: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual