MERIT INCH Search Results

STripFET

Abstract: STD85N3LH5 STD60N3LH5 STD70N2LH5 STD95N2LH5 STL150N3LLH5 STL65N3LLH5 STS14N3LLH5 STU60N3LH5 STU70N2LH5
Contextual Info: STripFETTM V The latest DC-DC converters - more power per cubic inch STMicroelectronics’ latest proprietary STripFET technology delivers extremely low conduction and switching losses and achieves the lowest figure of merit FOM among comparable devices.

71933

Abstract: Mohan si4886 Si4420 siliconix Mohan power electronics converters applications a MOSFET SO-8 Si4420 siliconix datasheet SI4442 AN605 Si4420
Contextual Info: AN605 Vishay Siliconix Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit Jess Brown, Guy Moxey INTRODUCTION There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental

PB3A003P200

Abstract: PB3A003P202 Denki SPH-002GW-P0 PB3A003P201 PB3A003R200 230V circuit breaker PBM565 PBM604FXE20 stepping motor japan servo
Contextual Info: CLOSED LOOP STEPPING SYSTEMS Model No.PB Ver. 3 English Hybrid system combining the ease-of-use of stepping motors with the reliability of servomotors. CLOSED LOOP STEPPING SYSTEMS MERIT Model No.PB Increased System Speed and Smaller System Size 1 High Speed Positioning

capacitor k1k

Contextual Info: TSV521, TSV522, TSV524, TSV521A, TSV522A, TSV524A High merit factor 1.15 MHz for 45 A CMOS op amps Datasheet - production data Related products • See TSV631, TSV632, TSV634 series for lower minimum supply voltage (1.5 V) • See LMV821, LMV822, LMV824 series for

IRF7807 equivalent

Abstract: MS-012AA IRF7805 IRF7807 F7101 IRF7101
Contextual Info: PD 91746 / 91747 IRF7805/IRF7807 PRELIMINARY HEXFET Chip-Set for DC-DC Converters • N Channel Application Specific MOSFETs • Ideal solution for mobile processor DC-DC Converters • Low Conduction Losses • Low Switching Losses • Low Figure of Merit

51 ohm resistor

Contextual Info: HMC839LP6CE v02.1010 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz Features • RF Bandwidth: 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz • Ultra Low Phase Noise -112 dBc/Hz in Band Typ. • Figure of Merit FOM -227 dBc/Hz

mvam108

Abstract: C8546A
Contextual Info: I nternational C8546A thru C8546D S em ico nducto r , I nc . SILICON TUNING DIODES TUNING DIODES WITH VERY HIGH CAPACITANCE RATIO • High Capacitance Ratio CR= 15 Min for MVAM108, 115, 125 ■ Guaranteed Diode Capacitance ■ Guaranteed Figure of Merit t°

Contextual Info: SiHG28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg

Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested

Contextual Info: HMC839LP6CE v001.0410 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz Features • RF Bandwidth: 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz • Ultra Low Phase Noise -112 dBc/Hz in Band Typ. • Figure of Merit FOM -227 dBc/Hz

DEVICE MARKING CODE 41

Abstract: sot markings sot23 markings marking code T1 Code sot-23 on semiconductor marking CODE box SOT23 marking 41 sot23
Contextual Info: Section 4 Small-Signal Field-Effect Transistors and MOSFETs In Brief. . . The data sheets on the following pages are designed to emphasize those FETs that by virtue of widespread industry use, ease of manufacture, and low relative cost, merit first consideration for new equipment design.

HMC839

Abstract: HMC839LP6CE HMC860LP3 100MHz VCO schematic HMC860LP3E PLL 2400 MHZ MA 4820
Contextual Info: HMC839LP6CE v02.1010 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz Features • RF Bandwidth: 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz • Ultra Low Phase Noise -112 dBc/Hz in Band Typ. • Figure of Merit FOM -227 dBc/Hz

Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested

Contextual Info: SiHP21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg

Contextual Info: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved

Contextual Info: SiHP28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg

Contextual Info: SiHF28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg

Contextual Info: SiHG21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg

Contextual Info: SiHB33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg

SIHP33N60EF-GE3

Contextual Info: SiHP33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg

Contextual Info: SiHG33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg

Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses

Contextual Info: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses

Contextual Info: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved