MEMORY 256K I2C Search Results

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

Contextual Info: HT24LC256 CMOS 256K 2-Wire Serial EEPROM Features Description • Operating voltage: 2.2V~5.5V for Ta=-40˚C to +85˚C The HT24LC256 device is a 256K-bit 2-wire serial read/write non-volatile memory device manufactured using a CMOS floating gate process. Its 256K bits of

Contextual Info: HT24LC256 CMOS 256K 2-Wire Serial EEPROM Features Description • Operating voltage: 2.2V~5.5V for Ta=-40˚C to +85˚C The HT24LC256 device is a 256K-bit 2-wire serial read/write non-volatile memory device manufactured using a CMOS loating gate process. Its 256K bits of

FT24C256

Contextual Info: FT24C256 256K-bit 2-Wire Serial CMOS EEPROM Description The FTE24C256 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The FTE24C256 contains a memory array of 256K-bits 32,768 x 8 , and is further subdivided into 512 pages of 64 bytes each

Memory

Abstract: FTE24C256
Contextual Info: FT24C256 256K-bit 2-Wire Serial CMOS EEPROM Description The FTE24C256 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The FTE24C256 contains a memory array of 256K-bits 32,768 x 8 , and is further subdivided into 512 pages of 64 bytes each

MB85RC256

Abstract: MB85RC256VPF-G-JNERE2
Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00019-2v0-E FRAM MB85RC256V MB85RC256V is a 256K-bits FRAM with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

MX-38T

Abstract: CSA4.00MG TC57256AD TMP87PM43 TMP87PM43N
Contextual Info: TO SHIBA TMP87PM43 CMOS 8-BIT MICROCONTROLLER TMP87PM43N The 87PM43 is a One-Time PROM microcontroller with low-power 256K bits a 32K bytes program memory electrically programmable read only memory for the 87CK43/M43 system evaluation. The 87PM43 is pin

Contextual Info: TO SHIBA TMP87PM43 CMOS 8-Bit Microcontroller TMP87PM43N The 87PM43 is a One-Time PROM microcontroller with low-power 256K bits a 32 Kbytes program memory electrically programmable read only memory for the 87CK43/M43 system evaluation. The 87PM43 is pin

TTE24C256

Abstract: TTE24C
Contextual Info: 256K-bit 2-Wire Serial CMOS EEPROM TTE24C256 Preliminary Description The TTE24C256 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C256 contains a memory array of 256K-bits 32,768 x 8 , and is further subdivided into 512 pages of 64 bytes each

Contextual Info: STA2058 TESEO baseband High performance single chip GPS baseband with embedded FLASH memory Data Brief Features • Single chip baseband ■ Complete embedded memory system: – FLASH 256K+16K bytes – RAM 64K bytes TQFP64 ■ 66-MHz ARM7TDMI 32 bit processor

error multiplexer parity comparator

Abstract: PQFP144 ST10 ST10F269 TQFP144 1221h ST10F269 03 st10 Bootstrap p46a
Contextual Info: ST10F269Zx 16-BIT MCU WITH MAC UNIT, 128K to 256K BYTE FLASH MEMORY AND 12K BYTE RAM DATASHEET • ■ 128K or 256KByte Flash Memory 2K Byte Internal RAM 16 CPU-Core and MAC Unit Watchdog 16 10K Byte XRAM 16 16 8 16 Interrupt Controller 8 Por t 5 16 BRG BRG

Contextual Info: ST10F269Zx 16-BIT MCU WITH MAC UNIT, 128K to 256K BYTE FLASH MEMORY AND 12K BYTE RAM DATASHEET • ■ 128K or 256KByte Flash Memory 2K Byte Internal RAM 16 CPU-Core and MAC Unit Watchdog 16 10K Byte XRAM 16 16 8 16 Interrupt Controller 8 Por t 5 16 BRG BRG

b30 c250

Abstract: TP082 2C162 82430VX TP1003 intel C236 TP032 TP1026 TP1033 RY 227
Contextual Info: Page# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Page Title Index PRIMARY CPU Socket 7 Clock Generator 82437VX Chipset TVX 82438VX Chipset TDX Synchronous Cache, 256K Memory Modules 0 & 1 Memory Modules 2 & 3 System ROM PIIX3 PCI IDE Interface

Contextual Info: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: Pre-Production FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

teseo

Abstract: STA2058 STA5620 teseo 2 data output LFBGA144 LQFP64 STA2058EX usb i2c spi converter 03996E-1
Contextual Info: STA2058 Teseo GPS Platform high-sensitivity baseband Data Brief Features • Single chip baseband with embedded flash ■ Complete embedded memory system: – FLASH 256K+16K bytes – RAM 64K bytes ■ 66-MHz ARM7TDMI 32 bit processor ■ High Performance GPS engine HPGPS

FM24V02-GTR

Abstract: FM24V02 FM24V05 FM24VN02 FM24VN05
Contextual Info: Product Preview FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM24V02

Abstract: FM24V05 FM24VN02 FM24VN05
Contextual Info: Preliminary FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM24V02G

Abstract: FM24VN02 AEC-Q100-002 FM24V02
Contextual Info: Pre-Production FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

D42280V

Abstract: old nec tv diagram UPD42280GU-30 uPD42280V-30 D42280GU UPD42280 uPD42280-30 uPD42280G uPD42280V-60 old nec 14" tv diagram
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ,uPD42280 2 M-BIT FIELD BUFFER The nPD42280 is a high-speed field buffer equipped with a memory of 256K words x 8bit 262, 224 x 8bit configuration. The high-speed and the low power consumption are realized in CMOS dynamic circuit.

LPC-H2294

Abstract: te28f320c3-bd70 LPC2294 TE28F320C3BD70 71V416 USB-RS232 USBRS232
Contextual Info: LPC-H2294 HEADER BOARD FOR LPC2294 ARM7TDMI-S MICROCONTROLLER WITH 1MB SRAM AND 4MB FLASH MEMORY FEATURES: z z z z z z z z z z z z z z z z z z z MCU: LPC2294 16/32 bit ARM7TDMI-S t with 256K Bytes Program Flash, 16K Bytes RAM, EXTERNAL MEMORY BUS, RTC,4x 10 bit ADC 2.44 uS, 2x UARTs, 4x CAN, I2C, SPI, 2x 32bit TIMERS, 7x CCR, 6x PWM, WDT, 5V tolerant I/O, up to

diode T35 12H

Abstract: ST10F269Z2Q6 ST10F269Q ST10F269Z2T3 PQFP144 ST10F269 TQFP144 diode t318 BB126 st10 Bootstrap
Contextual Info: ST10F269 16-BIT MCU WITH MAC UNIT, 128K to 256K BYTE FLASH MEMORY AND 12K BYTE RAM DATASHEET • ■ 2K Byte Internal RAM 16 CPU-Core and MAC Unit Watchdog 16 10K Byte XRAM CAN1_RXD CAN1_TXD CAN1 CAN2_RXD CAN2_TXD CAN2 PEC Oscillator and PLL 16 Interrupt Controller