MEDIUM POWER TRANSISTOR 1.5W Search Results

T6661

Abstract: MMFT6661T1 MMFT6661 MARKING WAW B8 SOT223 T6661 SOT-223
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMH6661T1/D DATA — — Medium Power Field Effect Transistor MMFT6661TI MotorolaPreferred Devise N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for

MMFT2406T1

Abstract: MMFT2406T3 T2406 Q223
Contextual Info: MOTOROU SEMICONDUCTOR — — TECHNICAL Order this document by MM~2406T1/D DATA Medium Power Field Effect Wansistor N-Channel Enhancement Mode Silicon Gate TMOS E-FETM SOT-223 for Surface Mount I This TMOS medium power field effect transistor is designed for

ZXTP25020CFFTA

Abstract: TS16949 ZXTP25020CFF 079w marking 1F4
Contextual Info: ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4.5A RCE(sat) = 41m⍀ VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor. The reverse

Contextual Info: ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4.5A RCE(sat) = 41m⍀ VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor. The reverse

TRANSISTOR MARKING 1d6

Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

TS16949

Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

Zetex T 705

Abstract: TRANSISTOR MARKING 1d6 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

TS16949

Abstract: ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

ZXTN07012EFF

Abstract: ZXTP07012EFF ZXTP07012EFFTA
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

ZXTN08400BFF

Abstract: ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking
Contextual Info: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high

TRANSISTOR MARKING 1d5

Contextual Info: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high

marking 1d2

Abstract: ZETEX GATE DRIVER ZXTN07045EFF ZXTP07040DFF ZXTP07040DFFTA
Contextual Info: ZXTP07040DFF 40V, SOT23F, PNP medium power transistor Summary; BVCEO > -40V BVECO > -3V IC cont = -3A VCE(sat) < -100mV @ 1A RCE(sat) = 67m⍀ PD = 1.5W Complementary part number ZXTN07045EFF Description C This low voltage PNP transistor has been designed for applications

marking 1d2

Contextual Info: ZXTP07040DFF 40V, SOT23F, PNP medium power transistor Summary; BVCEO > -40V BVECO > -3V IC cont = -3A VCE(sat) < -100mV @ 1A RCE(sat) = 67m⍀ PD = 1.5W Complementary part number ZXTN07045EFF Description C This low voltage PNP transistor has been designed for applications

Contextual Info: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications

marking 1F7

Abstract: ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA
Contextual Info: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications

Contextual Info: SOT89 IMPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX604 FEATURES: * 1A CONTINUOUS COLLECTOR CURRENT * 1.5W POWER DISSIPATION * GUARANTEED HFE SPECIFIED UP TO 2A * FAST SW ITCHING PARTMARKING DETAIL - 6 0 4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL

TS16949

Abstract: ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v
Contextual Info: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where

Contextual Info: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where

transistor ztx

Abstract: ZTX749 SE157
Contextual Info: PNP Silicon Planar Medium Power Transistor ZTX 749 FEATURES • • • • • • 1.5W power dissipation at Tamb= 25°C* 2 A continuous lc Excellent gain characteristics up to 6A pulsed Low saturation voltages Fast switching NPN complementary type available

Contextual Info: ZXTP19020CFF 20V, SOT23F, PNP medium power transistor Summary: BVCEO > -20V BVECO > -5V IC cont = -5A VCE(sat) < 40mV @ 100mA RCE(sat) = 21m⍀ PD = 1.5W Complementary part number ZXTN19020CFF Description C Advanced process capability has been used to maximize the

TRANSISTOR MARKING 1d7

Abstract: TS16949 ZXTN19020CFF ZXTP19020CFF ZXTP19020CFFTA zetex 749
Contextual Info: ZXTP19020CFF 20V, SOT23F, PNP medium power transistor Summary: BVCEO > -20V BVECO > -5V IC cont = -5A VCE(sat) < 40mV @ 100mA RCE(sat) = 21m⍀ PD = 1.5W Complementary part number ZXTN19020CFF Description C Advanced process capability has been used to maximize the

TRANSISTOR MARKING 1d8

Abstract: TS16949 ZXTN19020DFF ZXTP19020DFF ZXTP19020DFFTA
Contextual Info: ZXTP19020DFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 5.5A VCE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to

ZXTN19100CFF

Abstract: TS16949 ZXTP19100CFF ZXTP19100CFFTA
Contextual Info: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP