MEDIUM LEVEL POWER DIODE Search Results

transistor Amp 3055L

Abstract: 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569
Contextual Info: MOTOROLA Order this document by MMFT3055EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055EL Motorola Preferred Device SOT–223 for Surface Mount MEDIUM POWER LOGIC LEVEL TMOS FET

Contextual Info: MMIC Medium Level Mixer, 1700 - 2000 MHz MD54-0003 V3 Features • • • • • • Functional Diagram Low Conversion Loss Input Power @ 1 dB Compression: +21 dBm Typical Two-Tone IM Ratio: > 50 dBc LO Drive Level: +11 to +23 dBm DC - 200 MHz IF Bandwidth

Contextual Info: LEAD FREE MMIC Medium Level Mixer 1700 - 2000 MHz MAMXSS0010 V1 Features • • • • • • • • • • Functional Diagram Low Conversion Loss Input Power @ 1 dB Compression: +21 dBm Typical Two-Tone IM Ratio: > 50 dBc LO Drive Level: +11 to +23 dBm

DCS1800

Abstract: M513 MD54-0003
Contextual Info: MMIC Medium Level Mixer 1700 - 2000 MHz MD54-0003 V4 Features • • • • • • Functional Diagram Low Conversion Loss Input Power @ 1 dB Compression: +21 dBm Typical Two-Tone IM Ratio: > 50 dBc LO Drive Level: +11 to +23 dBm DC - 200 MHz IF Bandwidth

DCS1800

Abstract: M513 MAMXSS0010 MAMXSS0010SMB MAMXSS0010TR MD54-0003
Contextual Info: RoHS Compliant MMIC Medium Level Mixer 1700 - 2000 MHz MAMXSS0010 V2 Features • • • • • • • • • • Functional Diagram Low Conversion Loss Input Power @ 1 dB Compression: +21 dBm Typical Two-Tone IM Ratio: > 50 dBc LO Drive Level: +11 to +23 dBm

DCS1800

Abstract: MD54-0003 MD54-0003RTR MD54-0003SMB MD54-0003TR MS-012-AA
Contextual Info: MMIC Medium Level Mixer 1700 - 2000 MHz MD54-0003 V2.00 SO-8 Features ● ● ● ● ● ● PIN 8 Low Conversion Loss +21 dBm Input Power @ 1 dB Compression Typical Two-Tone IM Ratio of ≥50 dBc LO Drive Level: +11 to +23 dBm DC - 200 MHz IF Bandwidth Low Cost Plastic SOIC Package

D540003

Contextual Info: Afocm Coming Attractions W an A M P com pany MMIC Medium Level Mixer 1700 - 2000 MHz MD54-0003 V 2 .0 0 Features • • • • • • SO-8 Low Conversion Loss +21 dBm Input Power @ 1 dB Compression Typical Two-Tone IM Ratio of >50 dlic LO Drive Level: +11 to +23 dBm

MA40176-186

Abstract: MA4E190-276 MA40083-213 MA4E926-276 SCHOTTKY BARRIER DIODE MA40105-276 MA4E920 medium barrier schottky mw 137 MA40030
Contextual Info: m an A M P company Stripline Packaged Schottky Mixer Diodes V 2.00 Case Style 213 Features • • • • Large Choice of Available Packages Uniform RF Characteristics Screening to JANTXV Level Available Low, Medium and High Barrier Diodes Description Three families of stripline packaged mixer diodes are

hp 5082 2711

Abstract: 5082-2711
Contextual Info: HEWLETT-PACKARD i fT A J l tx x L l H 50E C MP N T S E W D E3 4447SÔ4 DOOSt . 53 T 6082-2273/74 5082-2295-98 5082-2350/51 5082-2400/01 5082-2520/21/05/66 5082-2701/02/06/07 5082-2711-14/23-24 5082-2817/18 SCHOTTKY BARRIER DIODES FOR MIXERS AND DETECTORS L E T T

Contextual Info: A jf e a m Stripline Packaged Silicon Schottky Mixer Diodes Features • LARGE CHOICE OF AVAILABLE PACKAGES ■ UNIFORM RF CHARACTERISTICS ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER

MA4882

Abstract: MA4852 MA40153
Contextual Info: Afocoti Axial Lead Glass Packaged Silicon Schottky Mixer Diodes Features • HIGH RELIABILITY ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER DIODES AVAILABLE ■ LOW NOISE FIGURE THROUGH 12

PJO 186

Contextual Info: /MÎKC4i m an A M P com pany Stripline Packaged Schottky Mixer Diodes V 2.00 Case Style 213 Features • Large C h o ic e o f A vailable P a ck a g es • U niform RF C h aracteristics • S c re e n in g to JA N T X V Level A vailable • Low , M ed iu m a n d H igh B a rrier D io d es

404-011

Abstract: dmb2856 404002
Contextual Info: Silicon Beam-Lead and Chip EHAlpha Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fab Description

DMJ4317

Abstract: DMJ4708 DMF5847 DME3256 DMF3383 DMJ6575 ka-band mixer DME3040 DMF5848 diode ring mixer
Contextual Info: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ËMlph DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication

dmj4317

Contextual Info: Silicon Beam-Lead and Chip EDAIphi Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication

MA4882

Abstract: ma4855
Contextual Info: Axial Lead Glass Packaged Silicon Schottky Mixer Diodes Features • HIGH RELIABILITY ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER DIODES AVAILABLE ■ LOW NOISE FIGURE THROUGH 12 GHz Applications Three families of axial lead Schottky diodes are offered

A beam lead ring quad of four Schottky diodes

Contextual Info: Silicon Beam-Lead Schottky Barrier Mixer Diodes EQA lpha DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication Description

e3055

Abstract: j4313 F2822 j2833 F3373 J2303 E3009 F2189 F4734 me2206
Contextual Info: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication Description

e327425

Abstract: F2138-000 DMJ2088-255
Contextual Info: Silicon Beam-Lead ESAlpha Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features • Ideal for M IC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SP C Controlled W afer Fabrication ^ > > p -

Contextual Info: DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diode Singles, Pairs, and Quads Bondable Beam-Lead Devices Applications • Microwave Integrated Circuits  Mixers  Detectors Features  Low 1/f noise  Low intermodulation distortion

Contextual Info: an A M P company Silicon Schottky Mixer Diode Chips V 2.00 Features Case Styles • Multi-Junction Chip for Higher Yield • Low Noise Figure Through 26 GHz • Small Jun ction Capacitance • Low and Medium Barrier Diodes Description 135 This series o f chip silicon Schottky m ixer diodes have gold

MA4001

Abstract: MA40150
Contextual Info: an AM P com pany Ceramic Packaged Schottky Mixer Diodes V 2.00 Case Styles Features • C h o ice o f T h re e A vailable P ack ag es • O n Be S c re e n e d to JANTXV Levels — Description T h ree fam ilies o f ce ra m ic p a c k a g e d S chottky d io d e s are

MA4E920-276

Abstract: MA40092 ZN400
Contextual Info: jyAcmi Stripline Packaged Silicon Schottky M ixer Diodes Features • LARGE CHOICE OF AVAILABLE PACKAGES ■ UNIFORM RF CHARACTERISTICS ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER DIODES Description Applications Three families of stripiine packaged mixer diodes are

5082-2350

Abstract: hp 2817 hpa 2350 5082-2817 5082-2200 diode hp 5082-2817
Contextual Info: Wlf^k HEWLETT 4447SÔH GGOTtiHb SB6 ^BHPA HEULETT-PACKAR] / CMPNTS D b lE PACKARD Schottky Barrier Diodes for Mixers and Detectors Technical Data 5082-2350/51 5082-2400/01 5082-2702/07 5082-2723/24 5082-2817/18 D IA M E T E R 1 63 064) 1 6 2 ( 060) Features